Landreth Professor
Electrical Engineering & Computer Science Department
Vanderbilt University
Research Group: Radiation Effects and Reliability Group/Institute for Space and Defense Electronics at Vanderbilt University
Research Interests: Effects of ionizing radiation on microelectronic devices & materials.
Origin(s) of 1/f noise in semiconductors, semiconductor devices, and metals.
Defects, reliability, radiation response of SiC, GaN, and other compound semiconductor devices
Radiation hardness assurance test methods.
Charge trapping in silicon dioxide, and interface-trap generation.
Radiation effects modeling and simulation.
Novel microelectronic materials, including silicon-on-insulator materials.
Electronics for high-radiation and high-temperature environments.
Advanced microelectronic processing/characterization, including ultrathin oxides & alternative dielectrics.
Thermally stimulated current methods to profile defects in insulators.
Education: Ph. D., Solid State Physics, Purdue University, May 1984
M. S., Experimental Physics, Purdue University, August 1981
B. S., Physics and Applied Math, Purdue University, May 1980
Contact Information:
Postal
Vanderbilt University
VU Station B #351824
2301 Vanderbilt Place
Nashville, TN 37235
Courier
Vanderbilt University
400 24th Ave. S.
Featheringill Hall, Room 328
Nashville, TN 37212
Phone (615) 322-2498
Fax (615) 343-6702
E-mail (Vanderbilt) dan.fleetwood@vanderbilt.edu
E-mail (Home) dmfleet@aol.com