Skip to main content

Kevin Warren

Education

Ph.D. Electrical Engineering, Vanderbilt University, Nashville, TN. 2010

Dissertation Title: Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments

M.S. Electrical Engineering, Vanderbilt University, Nashville, TN. 1999

Thesis Title: The Influence of SOI-MOSFET Geometry on Predicted Single Event Cross Sections

M.S. Chemistry, Vanderbilt University, Nashville, TN. 1997

Thesis Title: Measurement of b and n2 for Platinum/silica-xerogel Nanocomposites and Preparation of Gold Quantum Dots on Sodium Bicarbonate

B.S. Chemistry, Tennessee Technological University, Cookeville, TN.1994

Emphasis: Biochemistry, Minor: Mathematics, Biology

Professional Experience

Vanderbilt University Institute for Space and Defense Electronics 2003-Current

  • Developed novel methodologies for predicting single event upset rates in hardened technologies through advanced simulation techniques using physics based radiation transport software (e.g., Geant4, MRED)
  • Served as Principle Investigator for the development and migration of in-house developed radiation transport tools for government and commercial partners
  • Designed, developed, and integrated space environment modeling modules and tools including those for the transport of charged particles through the Earth’s magnetosphere using Geant4
  • Established new laboratories and design facilities for the development of electronics and systems for spaceflight
  • Served as lead systems engineer and project technical manager for payload designs on CubeSat programs
  • Served as lead for multiple heavy ion, proton, and dose-rate testing campaigns
  • Managed contracts relating to the analysis of electronic components and semiconductor processes for use in high reliability applications in space radiation environments
  • Performed design and layout of test chips and developed test plans for weapons radiation environment applications
  • Performed extensive design analysis and simulation of high reliability electronics for medical implantable devices and the effects of terrestrial and diagnostic radiation sources on their failure rates
  • Managed junior engineers and students in meeting contract goals related to the modeling and simulation of radiation effects on electronics
  • Wrote and participated in the writing of proposals related to group research activities

The Johns Hopkins University Applied Physics Laboratory 2000-2003

  • Radiation effects engineer for MESSENGER and CONTOUR spacecraft
  • Performed single event effect testing of candidate spacecraft electronics at Brookhaven National Laboratories and the Texas A&M Cyclotron Facility as well as total ionizing dose testing using an in-house 60Co source
  • Developed procedures and performed up-screening of commercial electronics for spaceflight

Raytheon STX 1999-2000

  • Radiation effects on electronics engineer for manned space-flight systems including the International Space Station at Marshall Space Flight Center

Professional Activities

  • 2000-present: Reviewer for the Nuclear Plasma Society’s IEEE Transactions on Nuclear Science
  • 2015: Reviewer for Nuclear Instruments and Methods in Physics Research, B
  • 2013 International Reliability Physics Symposium committee member
  • 2012 IEEE Nuclear and Space Radiation Effects Conference Short Course presenter
  • 2011 International Reliability Physics Symposium committee member
  • 2015, 2005 Nuclear and Space Radiation Effects Technical Session Chairman

Awards

  • 2017 HEART Conference Best Paper award
  • 2015 IEEE Nuclear and Space Radiation Effects Conference Outstanding Conference Paper Award
  • 2007 IEEE Nuclear and Space Radiation Effects Conference Outstanding Conference Paper Award

Peer Reviewed Publications

  • P. Wang, A.L. Sternberg, B.D. Sierawski, E. Zhang, K.M. Warren, A.M. Tonigan, R.M. Brewer, N.A. Dodds, G. Vizkelethy, S.L. Jordan, D.M. Fleetwood, R.A. Reed, R.D. Schrimpf, “Single Event Latchup Sensitive Volume Model for a 180-nm SRAM Test Structure,” Submitted for publication and under review, 2019 IEEE Trans. Nucl. Sci.
  • G.D. Poe, J.S. Kappila, D.R. Ball, K.M. Warren, B.L. Bhuva, T.D. Haeffner, L.W. Massengill, “A Radiation-Tolerant D Flip-Flop Designed for Low-Voltage Applications,” Submitted for publication and under review, 2019 IEEE Trans. Nucl. Sci.
  • J.D. Black, J.A. Dame, D.A. Black, P.E. Dodd, M.R. Shaneyfelt, J. Teife, J.G. Salas, R. Steinbach, M. Davis, R.A. Reed, R.A. Weller, J.M. Trippe, K.M. Warren, A.M. Tonigan, R.D. Schrimpf, R.S. Marquez, “Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts,” IEEE Trans. Nucl. Sci., vol. 66, no. 1, pp. 233-239. Jan. 2019.
  • K.M. Warren, J.S. Kauppila, R.A. Weller, M.H. Mendenhall, R.A. Reed, R.D. Schrimpf, A.L. Amort, M. Cabanas-Holmen, and L.W. Massengill, “Analyzing Single Event Effects with Monte Carlo Radiation Transport and Electronic Design Automation Tools,” Journal of Radiation Effects, Research, and Engineering, vol. 36, no. 1, April 2018.
  • J.M. Trippe, R.A. Reed, R.A. Austin, B.D. Sierawski, L.W. Massengill, R.A. Weller, K.M. Warren, R.D. Schrimpf, B. Narasimham, B. Bartz, and D. Reed, “Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model,” IEEE Trans. Nucl. Sci., vol. 65, no. 2, pp. 712-718, Dec 2017.
  • M. Hamlyn, P. L. Hower, K.M. Warren and R. C. Baumann, “Transmission Line Pulse Test Method for Estimating SEB Performance of n-Channel Lateral DMOS Power Transistors,” IEEE Trans. Nucl. Sci., vol. 65, No. 1, pp. 249-255, Dec. 2017.
  • R.C. Harrington, J.S. Kauppila, K.M. Warren, Y.P. Chen, J.A. Maharrey, T.D. Haeffner, T.D. Loveless, B.L. Bhuva, M. Bounasser, K. Lilja, and L.W. Massengill, “Estimating Single-Event Logic Cross Sections in Advanced Technologies,” IEEE Trans. Nucl. Sci., vol. 64, no. 8, pp. 2115-2121, Aug. 2017.
  • B.D. Sierawski, K.M. Warren, A.L. Sternberg, R.A. Austin, J.M. Trippe, M.W. McCurdy, R.A. Reed, R.A. Weller, M.L. Alles, R.D. Schrimpf, L.W. Massengill; D.M. Fleetwood, A. Monterio, G.W. Buxton, J.C. Brandenburg, W.B. Fisher, and R. Davis, “CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance,” IEEE Trans. Nucl. Sci., vol. 64, no. 1, pp. 293-300, Jan. 2017.
  • C.N. Arutt, K.M. Warren, R.D. Schrimpf, R.A. Weller, J.S. Kauppila, J.D. Rowe, A.L. Sternberg, R.A. Reed, D.R. Ball, and D.M. Fleetwood, “Proton Irradiation as a Screen for Displacement-Damage Sensitivity in Bipolar Junction Transistors,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2498-2504. Dec. 2015.
  • N.A. Dodds, M.J. Martinez, P.E. Dodd, M.R. Shaneyfelt, F.W. Sexton, J.D. Black, D.S. Lee, S.E. Swanson, B.L. Bhuva, K.M. Warren, R.A. Reed, J. Trippe, B.D. Sierawski, R.A. Weller, N. Mahatme, N.J. Gaspard, T. Assis, R. Austin, S.L. Weeden-Wright, L.W. Massengill, G. Swift, M. Wirthlin, M. Cannon, R. Liu, L. Chen, A.T. Kelly, P.W. Marshall, M. Trinczek, E.W. Blackmore, S.-J. Wen, R. Wong, B. Narasimham, J.A. Pellish, and H. Puchner, “The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate,” IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp. 2440-2451. Dec. 2015.
  • R.A. Reed, R.A. Weller, M.H. Mendenhall, D.M. Fleetwood, K.M. Warren, B.D. Sierawski, M.P. King, R.D. Schrimpf, and E.C. Auden, “Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code,” IEEE Trans. Nucl. Sci., vol. 62, no. 4, pp. 1441-146, Aug. 2015.
  • J.D. Black, P.E. Dodd, and K.M. Warren, “Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction,” IEEE Trans. Nucl. Sci., vol. 60, no. 3, pp. 1836-1851. Jun. 2013.
  • J.H. Adams, A.F. Barghouty, M.H. Mendenhall, R.A. Reed, B.D. Sierawski, K.M. Warren, J.W. Watts, and R.A. Weller, “CRÈME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 3141-3147. Dec. 2012.
  • W.G. Bennett, R.D. Schrimpf, N.C. Hooten, R.A. Reed, J.S. Kauppila, R.A. Weller, K.M. Warren, and M.H. Mendenhall, “Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients,” IEEE Trans. Nucl. Sci., vol. 59, no. 6, pp. 2704-2709. Dec. 2012.
  • M.A. Clemens, B.D. Sierawski, K.M. Warren, M.H. Mendenhall, N.A. Dodds, R.A. Weller, R.A. Reed, P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, S.A. Wender, and R.C. Baumann, “The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets,” IEEE Trans. Nucl. Sci., vol. 58, no. 6, pp. 2591-2598. Dec. 2011.
  • L. Artola, G. Hubert, K.M. Warren, M. Gaillardin, R.D. Schrimpf, R.A. Reed, R.A. Weller, J.R. Ahlbin, P. Paillet, M. Raise, S. Girard, S. Duzellier, L.W. Massengill, and F. Bezerra, “SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65nm Technology Node,” IEEE Trans. Nucl. Sci., vol. 58, no. 3, pp. 1338-1346. Jun. 2011.
  • N.F. Haddad, A.T. Kelly, R.K. Lawrence, Bin Li, J.C. Rodgers, J.F. Ross, K.M. Warren, R.A. Weller, M.H. Mendenhall, and R.A. Reed, “Incremental Enhancement of SEU Hardened 90nm CMOS Memory Cell,” IEEE Trans. Nucl. Sci., vol. 58, no. 3, pp. 975-980. Jun. 2011.
  • B. Narasimham, J.K. Wang, M. Buer, R. Gorti, K. Chandrasekharan, K.M. Warren, B.D. Sierawski, R.D. Schrimpf, R. A. Reed, and R.A. Weller, “Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS,” IEEE Trans. Nucl. Sci., vol. 57, no. 6. pp. 3176-3182. Dec. 2010.
  • T.D. Loveless, M.L. Alles, D.R. Ball, K.M. Warren, and L.W. Massengill, “Parametric Variability Affecting 45nm SOI SRAM Single Event Upset Cross-Section,” IEEE Trans. Nucl. Sci., vol. 57, no. 6, pp. 3228-3233. Dec. 2010.
  • R.A. Weller, M.H. Mendenhall, R.A. Reed, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, and L.W. Massengill, “Monte Carlo Simulation of Single Event Effects,” IEEE Trans. Nucl. Sci., vol. 57, no.4, pp. 1726-1746. Aug. 2010.
  • K.M. Warren, A.L. Sternberg, J.D. Black, R.A. Weller, R. A. Reed, M.H. Mendenhall, R.D. Schrimpf, and L.W. Massengill, “Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop,” IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3130-3137. Dec. 2009.
  • R.A. Weller, R.A. Reed, K.M. Warren, M.H. Mendenhall, B.D. Sierawski, R.D. Schrimpf, and L.W. Massengill, “General Framework for Single Event Effects Rate Prediction in Microelectronics,” IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3098-3108. Dec. 2009.
  • B.D. Sierawski, J.A. Pellish, R.A. Reed, R.D. Schrimpf, K.M. Warren, R.A. Weller, M.H. Mendenhall, J.D. Black, A.D. Tipton, M.A. Xapsos, R.C. Baumann, X. Deng, M.J. Campola, Friendlich, H.S. Kim, A.M. Phan, and C.M. Seidleck, “Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions,” IEEE Trans. Nucl. Sci., vol. 56 no. 6, pp. 3085-3092. Dec. 2009.
  • R.A. Weller, R.A Reed, K.M. Warren, M.H. Mendenhall, B.D. Sierawski, R.D. Schrimpf, and L.W. Massengill, “General Framework for Single Event Effects Rate Prediction in Microelectronics,” IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3098-3108. Dec. 2009.
  • K.M. Warren, A.L. Sternberg, R.A. Weller, M. P. Baze, L.W. Massengill, R.A. Reed, M.H. Mendenhall, and R.D. Schrimpf, “Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry,” IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2886-2894. Dec. 2008.
  • J.D. Black, D.R. Ball II, K.M. Warren, R.D. Schrimpf, R.A. Reed, D.M. Fleetwood, W.H. Robinson, A.D. Tipton, D.A. Black, P.E. Dodd, and N F. Haddad, “Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection ,” IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 2943-2947. Dec. 2008.
  • R.D. Schrimpf, K.M. Warren, D.R. Ball, R.A. Weller, R.A. Reed, D.M. Fleetwood, L.W. Massengill, M.H. Mendenhall, S.N. Rashkeev, S.T. Pantelides, and M.L. Alles, “Multi-Scale Simulation of Radiation Effects in Electronic Devices,” IEEE Trans. Nucl. Sci., vol. 55, no. 4, pp. 1891-1902. Aug. 2008.
  • M.J. Gadlage, R.D. Schrimpf, B. Narasimham, J.A. Pellish, K.M. Warren, R.A. Reed, B.L. Bhuva, L.W. Massengill, and X. Zhu, “Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS Technology,” IEEE Electron Device Let., vol. 29, no. 6, pp. 638-640. Jun. 2008.
  • K.M. Warren, B.D. Sierawski, R.A. Reed, R.A. Weller, C. Carmichael, A. Lesea, M.H. Mendenhall, P.E. Dodd, R.D. Schrimpf, L.W. Massengill, T. Hoang, H. Wan, JL Jong, R. Padovani, and J. Fabula, “Monte-Carlo Based On- Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch,” IEEE Trans. Nucl. Sci., vol. 54, no. 6. pp. 2419-2425. Dec. 2007.
  • P.E. Dodd, J.R. Schwank, M.R. Shaneyfelt, J.A. Felix, P. Paillet, V. Ferlet-Cavrois, J. Baggio, R.A. Reed, K.M. Warren, R.A. Weller, R.D. Schrimpf, G.L. Hash, S.M. Dalton, K. Hirose, and H. Saito, “Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits,” IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2303-2311. Dec. 2007.
  • R.A. Reed, R.A. Weller, M.H. Mendenhall, J.-M Lauenstein, K.M. Warren, J.A. Pellish, R.D. Schrimpf, B.D. Sierawski, L.W. Massengill, P.E. Dodd, M.R. Shaneyfelt, J.A. Felix, J.R. Schwank, N.F. Haddad, R.K. Lawrence, J.H. Bowman, and R. Conde, “Impact of Ion Energy and Species on Single Event Effects Analysis,” IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2312-2321. Dec. 2007.
  • J.A. Pellish, R.A. Reed, A.K. Sutton, R.A. Weller, M.A. Carts, P.W. Marshall, C.J. Marshall, R. Krithivasan, J.D. Cressler, M.H. Mendenhall, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, and G.F. Niu, “A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations,” IEEE Trans. Nucl. Sci., vol. 54, no. 6. pp. 2322-2329. Dec. 2007.
  • D. McMorrow, W.T. Lotshaw, J.S. Melinger, S. Buchner, J.D. Davis, R.K. Lawrence, D. Haddad, J.H. Bowman, R.D. Brown, D. Carlton, J Pena, J. Vasquez, K.M. Warren, and L.W. Massengill, “Single-Event Upset in Flip- Chip SRAM Induced by Through-Wafer, Two-Photon Absorption,” IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2421-2425. Dec. 2007.
  • K.M. Warren, R.A. Weller, B.D. Sierawski, R.A. Reed, M.H. Mendenhall, R.D. Schrimpf, L.W. Massengill, M. Porter, J. Wilkinson, K.A. LaBel, and J. Adams, “Application of RADSAFE to Model Single Event Upset Response of a 0.25 um CMOS SRAM,” IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 898-903. Aug. 2007.
  • B.D. Olson, O.A. Amusan, S. Dasgupta, L.W. Massengill, A.F. Witulski, B.L. Bhuva, M.L. Alles, K.M. Warren, and D.R. Ball, “Analysis of Parasitic PNP Bipolar Transistor Mitigation Using Well Contacts in 130 nm and 90 nm CMOS Technology,” IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 894-897. Aug. 2007.
  • K.M. Warren, B.D. Sierawski, R.A. Weller, R.A. Reed, M.H. Mendenhall, J.A. Pellish, R.D. Schrimpf, L.W. Masengill, M.E. Porter, and J.W. Wilkinson, “Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools,” Electron Device Let., vol. 28, no. 2, pp. 180-182. Feb. 2007.
  • R.A. Reed, R.A. Weller, R. D. Schrimpf, M.H. Mendenhall, K.M. Warren, and L.W. Massengill, “Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis,” IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3356-3362. Dec. 2006.
  • D.R. Ball, K.M. Warren, R.A. Weller, R.A. Reed, A. Kobayashi, J.A. Pellish, M.H. Mendenhall, C.L. Howe, L.W. Massengill, R.D. Schrimpf, and N.F. Haddad, “Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology,” IEEE Trans. Nucl. Sci., vol. 53, no. 4, pp. 1794-1798. Aug. 2006.
  • K.M. Warren, R.A. Weller, M.H. Mendenhall, R.A. Reed, D.R. Ball, C.L. Howe, B.D. Olson, M.L. Alles, L.W. Massengill, R.D. Schrimpf, N.F. Haddad, S.E. Doyle, D. McMorrow, J.S. Melinger, and W.T. Lotshaw, “The Contribution of Nuclear Reactions to Heavy Ion Single Event Upset Cross-section Measurements in a High-density SEU Hardened SRAM,” IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2125-2131. Dec. 2005.
  • C.L. Howe, R.A. Weller, R.A. Reed, M.H. Mendenhall, R.D. Schrimpf, K.M. Warren, D.R. Ball, L.W. Massengill, K.A. LaBel, J.W. Howard, and N.F. Haddad, “Role of Heavy-ion Nuclear Reactions in Determining On-orbit Single Event Error Rates,” IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2182-2188. Dec. 2005.
  • B.D. Olson, D.R. Ball, K.M. Warren, L.W. Massengill, N.F. Haddad, S.E. Doyle, and D. McMorrow, “Simultaneous Single Event Charge Sharing and Parasitic Bipolar Conduction in a Highly-Scaled SRAM Design,” IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2132-2136. Dec. 2005.
  • A.S. Kobayashi, D.R. Ball, K.M. Warren, R.A. Reed, M.H. Mendenhall, R.D. Schrimpf, and R.A. Weller, “The Effect of Metallization Layers on Single Event Susceptibility,” IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2189-2193. Dec. 2005.
  • K.M. Warren, D. Roth, J. Kinnison, and R. Pappalardo, “Single Event Burnout of NPN Bipolar Junction Transistors in Hybrid DC/DC Converters.” IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3097-3099. Dec. 2002.
  • K.M. Warren, D. Roth, J. Kinnison, and R. Pappalardo, “Single Event Testing of DC/DC Converters for Space Flight.” IEEE NSREC Data Workshop, 2002. p 106.
  • K.M. Warren, D. Roth, J. Kinnison, and B. Carkuff, “Single Event Latchup and Total Dose Testing of Candidate Spacecraft Components.” IEEE NSREC Data Workshop, 2001. p 100.
  • K.M. Warren, “The Influence of SOI-MOSFET Geometry on Predicted Single Event Cross Sections” M.S. Thesis, Dept. Elec. Eng., Vanderbilt Univ., Nashville, TN. 1999.
  • K.M. Warren, L.W. Massengill, R.D. Schrimpf, and H. Barnaby, “Analysis of the Influence of MOS Device Geometry on Predicted SEU Cross Sections,” IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1363-1369. Dec. 1998.

Conference Proceedings

  • J.D. Black, D.A. Black, P.E. Dodd, M.R. Shaneyfelt, R.N. Nowlin, J.M. Trippe, R.A. Reed, R.A. Weller, K.M. Warren, A.M. Tonigan, R.D. Schrimpf, “Heavy Ion, Neutron, and Proton Simulation of Sandia National Laboratories’ CMOS7 SOI Sequential Circuits,” 2019 Hardened Electronics and Radiation Technology (HEART) Conference, San Diego, CA.
  • B.D. Sierawski, R.A. Austin, J.M. Trippe , K.M. Warren, A.L. Sternberg, R.A. Reed, R.A. Weller, “The RadFxSat Mission to Study Radiation Effects on Advanced Nanoelectronics,” 2019 Small Satellite Conference, Logan, UT. Aug. 2019.
  • M.L. Breeding, R.A. Reed, K.M. Warren, M.L. Alles, “Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation,” 2019 IEEE International Reliability Physics Symposium (IRPS). Monterey, CA, Mar. 2019.
  • K.M. Warren, M.L. Alles, P. Fraznon, S. Iyer, R. Patti, S. La Lumondiere, G. Hiblot, S. Chermay, “The Impact of Materials on the Radiation Response of Three-Dimensional Integrated Circuits,” 2019 GOMACTech Conference, San Diego, CA. Mar. 2019.
  • G.D. Poe, J.S. Kauppila, D.R. Ball, K. M. Warren, B.L. Bhuva, T.D. Haeffner, and L.W. Massengill, ”A Radiation-Tolerant D Flip-Flop Designed for Low-Voltage Applications,” 2019 GOMACTech Conference, San Diego, CA. Mar. 2019.
  • J. Adams, R.A. Reed, B.D. Sierawski, Z. Robinson, J. Fisher, J. Nonnast, K.M. Warren, “Space Ionizing Radiation Environment and Effects (SIRE2) Model for Satellite Design,” 42nd COSPAR Scientific Assembly, Pasadena, CA. 2018.
  • R.A. Austin, B.D. Sierawski, R.A. Reed, J.M. Trippe, K.M. Warren, A.L. Sternberg, R.A. Weller, A.F. Witulski, “Mitigation of Single-Event Effects in CubeSat Commercial Off-the-Shelf Components,” 2018 GOMACTech Conference, Miami, FL. Mar. 2018.
  • B.D. Sierawski, R.A. Reed, K.M. Warren, A.L. Sternberg, R.A. Austin, J.M, Trippe, R.A. Weller, M.L. Alles, R.D. Schrimpf, L.W. Massengill, D.M. Fleetwood, G.W. Buxton, J.C. Brandenburg, W.B. Fisher, R. Davis, “CubeSat: Real-time soft error measurements at low earth orbits,” 2017 IEEE International Reliability Physics Symposium (IRPS).
  • R.A. Austin, B.D. Sierawski, J.M. Trippe, A.L. Sternberg, K.M. Warren, R.A. Reed, R.A. Weller, R.D. Schrimpf, M.L. Alles, L.W. Massengill, D.M. Fleetwood, G.W. Buxton, J.C. Brandenburg, W. Burns Fisher, R. Davis, “RadFxSat: A Flight Campaign for Recording Single-Event Effects in Commercial Off-the-Shelf Microelectronics,”Proceedings of the 2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Oct. 2017.
  • J.M. Trippe, R. A. Reed, B. D. Sierawski, R. A. Weller, R. A. Austin, L. W. Massengill, B. L. Bhuva, K.M. Warren, and B. Narasimham, “Predicting the vulnerability of memories to muon-induced SEUs with low-energy proton test informed by Monte Carlo simulations” 2016 IEEE International Reliability Physics Symposium (IRPS). Pasadena, CA, 2016, pp. SE-6-1-SE-6-6.
  • M.A. Clemens, B.D. Sierawski, K.M. Warren, M.H. Mendenhall, R.A. Weller, R.A. Reed, and R.C. Baumann, “Cross Comparison of SEU and MCU Responses of a 65nm SRAM to 14 MeV and Terrestrial Neutrons,” Single Event Effects Symposium, 2012.
  • M.L. Alles, R.D. Schrimpf, R.A. Reed, L.W. Massengill, R.A. Weller, M.H. Mendenhall, D.R. Ball, K.M. Warren, T.D. Loveless, J.S. Kauppila, and B.D. Sierawski, “Radiation Hardness of FDSOI and FinFET Technologies,” 2011 IEEE International SOI Conference, Tempe, AZ. pp. 1-2. Oct. 2011.
  • B.D. Sierawski, K.M. Warren, R.A. Reed, R.A. Weller, M.H. Mendenhall, R.D. Schrimpf, R.C. Baumann, and V. Zhu , “Contribution of Low-Energy (< 10 MeV) Neutrons to Upset Rate in a 65 nm SRAM,” 2010 IEEE International Reliability Physics Symposium, Anaheim, CA. May 2010. pp. 395-399.
  • V.B. Sheshadri, B.L. Bhuva, R.A. Reed, R.A. Weller, M.H. Mendenhall, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, S. Wen, and R. Wong, “Effects of Multi-node Charge Collection in Flip-flop Designs at Advanced Technology Nodes,” IEEE International Reliability Physics Symposium, Anaheim, CA. pp. 1026-1030. May 2010.
  • K.M. Warren, R.A. Reed, R.A. Weller, M.H. Mendenhall, B.D. Sierawski, and R.D. Schrimpf, “Applications of Monte Carlo Radiation Transport Simulations Techniques for Predicting Single Event Effects in Microelectronics,” 21st International Conference on the Application of Accelerators in Research and Industry, Ft. Worth, TX. 2010.
  • K.M. Warren, C. Slayman and J. Wilkinson, “Mechanisms, Modeling, Measurement and Mitigation of Soft Errors,” IEEE International Reliability Physics Symposium Short Course, Anaheim CA. 2010.
  • K.M. Warren, R.A. Reed, A. Sternberg, R.A. Weller, L.W. Massengill, R.D. Schrimpf, and M. Baze, “Single Event Upset Rate Prediction Methods for Circuit-level Hardened Devices,” Single Event Effects Symposium, San Diego, CA. 2010.
  • R.D. Schrimpf, K.M. Warren, R.A. Weller, R.A. Reed, L.W. Massengill, M.L. Alles, D.M. Fleetwood, X.J. Zhou, L. Tsetseris, and S.T. Pantelides, “Reliability and Radiation Effects in IC Technologies,” IEEE International Reliability Physics Symposium, Phoenix, AZ. 2008. pp. 97-106.
  • M. Porter, J. Wilkinson, K. Walsh, B. Sierawski, and K.M. Warren, “Soft Rrror Reliability Improvements for Implantable Medical Devices, “ IEEE International Reliability Physics Symposium, Phoenix, AZ. pp. 488-491. 2008.
  • K.M. Warren, B.D. Sierawski, R. A. Reed, M. E. Porter, M. H. Mendenhall, R. D. Schrimpf, and L. W. Massengill, “Predicting Neutron Induced Soft Error Rates: Evaluation of Accelerated Ground Based Test Methods,” IEEE International Reliability and Physics Symposium, Phoenix, AZ.
  • M. Turowski, A. Fedoseyev, A. Raman, K.M. Warren, and M.L. Alles, “Mixed- Mode Modeling of Radiation Effects with Nuclear Reactions in Nanoscale Electronics , “ GOMAC Conference, Las Vegas, NV. 2008.
  • B.Hughlock, M. Baze, and K. Warren, “RHBD Sequential Logic SEU Error Rates in Space Are Limited by Ions Incident at Grazing Angles,” GOMAC Conference, Las Vegas, NV. 2008.
  • R.D. Schrimpf, K.M. Warren, D.R. Ball, R.A. Weller, R.A. Reed, D.M. Fleetwood, L.W. Massengill, M.H. Mendenhall, S.N. Rashkeev, and S.T. Pantelides, “Multiscale Simulation of Radiation Effects in Electronic Devices,” European Conference on Radiation and Its Effects on Circuits and Systems Short Course Notes, Deauville, France, Sept. 10-14, 2007.
  • J.D. Wilkinson, M. Porter, S. Morrison, R.A. Reed, B.D. Sierawski, K.M. Warren, R.A. Weller, and M.H. Mendenhall, “Ion Microprobe Measurements of Sensitive Volumes in a 0.25um CMOS Flip-flop,” IEEE Workshop on Silicon Errors in Logic-System Effects, Austin, TX. 2007.
  • K.M. Warren, J.D. Wilkinson, S. Morrison, R.A. Weller, M.E. Porter, and B.D. Sierawski, “Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories”, ICICDT Conference, Albuquerque, NM. 2007.
  • N.F. Haddad, T. Bach, T. Conway, D. Lawson, J. Ross, J. Rodgers, A. Tipton, D. Ball, K. Warren, and R.D. Schrimpf, “Eliminating Low LET Sensitivities in Deep Sub-Micrometer SRAM Through Non-intrusive Technology Features,” Single Event Effects Symposium, 2006.
  • N.F. Haddad, T. Bach, T. Conway, D. Lawson, J. Ross, J. Rodgers, A. Tipton, D Ball, K. Warren and R. Schrimpf, “Eliminating Low LET Sensitivities in Deep Sub-Micrometer SRAM through Non-intrusive Technology Features, ” Presented at RADECS, Athens, Greece. 2006.

Presentations

  • K.M. Warren, “Using CubeSats to Evaluate Radiation Effects on Advanced Electronics,” 2018 Symposium on Space Innovations, Atlanta, GA. Nov. 2018.
  • K.M. Warren, “Monte Carlo Based Single-Event Effect and Soft-Error Rate Prediction Methods,” Short Course Tutorial, 2012 Nuclear and Space Radiation Effects Conference. Miami, FL. July 2012.
  • K.M. Warren, et al., “Applications of Monte Carlo Radiation Transport Simulations Techniques for Predicting Single Event Effects in Microelectronics,” 21st International Conference on the Application of Accelerators in Research and Industry, 2010.
  • K.M. Warren, et al., “Mechanisms, Modeling, Measurement and Mitigation of Soft Errors,” 2010 International Reliability and Physics Symposium Short Course Tutorial. May 2010.
  • K.M. Warren, et al., “Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop,” 2009 Nuclear and Space Radiation Effects Conference.
  • K.M. Warren, et al., “Predicting Neutron Induced Soft Error Rates: Evaluation of Accelerated Ground Based Test Methods,” Technical Presentation, 2008 International Reliability and Physics Symposium. April 2008.
  • K.M. Warren, et al., “Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry,” 2008 Nuclear and Space Radiation Effects Conference.
  • K.M. Warren, et al., “Monte-Carlo Based On- Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch,” 2007 Nuclear and Space Radiation Effects Conference.
  • K.M. Warren, et al., “The Contribution of Nuclear Reactions to Heavy Ion Single Event Upset Cross-section Measurements in a High-density SEU Hardened SRAM,” 2005 Nuclear and Space Radiation Effects Conference.
  • K.M. Warren, et al. “Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories”, Technical Presentation, 2007 ICICDT Conference Presentation.
  • K.M. Warren, et al., “Single Event Burnout of NPN Bipolar Junction Transistors in Hybrid DC/DC Converters,” 2002 Nuclear and Space Radiation Effects Conference.
  • K.M. Warren, et al., “Analysis of the Influence of MOS Device Geometry on Predicted SEU Cross Sections.” 1998 Nuclear and Space Radiation Effects Conference.

Additional Professional Skills

  • Proficient in C, C++, Python, 8/16-bit mC assembly and Scheme programming languages
  • Familiar with OSX, Linux, and Windows operating system environments
  • Extensive experience with Cadence circuit design and layout EDA tools, Synopsys Sentaurus and Silvaco TCAD tools, and OrCad Schematic Capture and PCB design tools

Consulting

  • 2015: With Mintz-Levine; expert witness on RF down/up-converters
  • 2013-2014: With Covington & Burling; expert witness on RF switch design
  • 2010: With Covington & Burling; expert witness on semiconductor processing

Personal Background and Interests

  • U.S. Citizen
  • ASEL/AMEL Commercial Instrument Pilot
  • Licensed Amateur Extra Class amateur radio operator, AK4TX