Publications

Journal Publications

  1. K. Ni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, “Gate bias and geometry dependence of total-ionizing-dose effects in InGaAs quantum-well MOSFETs,” IEEE, Trans. Nucl. Sci., (pending submission)
  2. K. Ni, G. Eneman, E. Simoen, A. Mocuta, N. Collaert, A. Thean, R. D. Schrimpf, R. A. Reed, and D. M. Fleetwood, “Electrical effects of a single extended defect in MOSFETs,” (submitted to IEEE Trans. Electron Devices)
  3. K. Ni, E. X. Zhang, I. K. Samsel, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, A. L. Sternberg, M. W. McCurdy, S. Ren, T. P. Ma, L. Dong, J. Y. Zhang, and P. D. Ye, “Charge collection mechanisms in GaAs MOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2752-2759, Dec. 2015
  4. K. Ni, E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T. W. Kim, J. Lin, and J. A. del Alamo, “Single event transient response of InGaAs MOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 61, pp. 3550-3556, Dec. 2014
  5. H. Zhang, H. Jiang, T. R. Assis, S. Ball, K. Ni, J. S. Kauppila, R. D. Schrimpf, L. W. Massengill, B. L. Bhuva, B. Narasimham, S. Hatami, A. Anvar, A. Lin, and J. K. Wang, “Temperature dependence of soft-error-rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies,” IEEE International Reliability Physics Symposium (submitted)
  6. Y. S. Puzyrev, X. Shen, K. Ni, C. X. Zhang, J. Hachtel, B. Choi, M. F. Chisholm, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Memristive switching of self-assembled ZnO nanorods,” J. Appl. Phys. (pending submission)
  7. S. Ren, H. Wu, R. Jiang, M. Bhuiyan, K. Ni, J. Chen, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye and T. P. Ma, “Total ionizing dose effects in ultra-thin body Ge on insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel,” IEEE, Trans. Nucl. Sci., (pending submission)
  8. S. Ren, M. Bhuiyan, J. Zhang, M. Si, R. Jiang, K. Ni, X. Wan, S. Chang, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, and T. P. Ma, “Total ionizing dose effects in GaAs MOSFETs with La based epitaxial gate dielectrics,” IEEE, Trans. Nucl. Sci., (pending submission)
  9. C. Claeys, E. Simoen, G. Eneman, K. Ni, A. Hikavyy, R. Loo, S. Gupta, C. Merckling, A. Alian, and M. Caymax, “Review-device assessment of electrically active defects in high-mobility materials,” ECS J. Solid State Sci. Technol. Vol. 5, pp. 3149-3165, 2016
  10. T. R. Assis, K. Ni, J. S. Kauppila, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, S. J. Wen, R. Wong, and C. Slayman, “Estimation of single-event induced collected charge for multiple transistors using analytical expressions,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2853-2859, Dec. 2015
  11. S. Ren, M. W. Si, K. Ni, X. Wan, J. Chen, S. Chang, X. Sun, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, S. Cui, and T. P. Ma, “Total ionizing dose effect in extremely scaled ultra-thin channel nanowire gate all around InGaAs MOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2888-2893, Dec. 2015
  12. I. K. Samsel, E. X. Zhang, A. L. Sternberg, K. Ni, R. A. Reed, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, D. Linten, J. Mitard, L. Witters, and N. Collaert, “Charge collection mechanisms of Ge-channel bulk pMOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2725-2731, Dec. 2015
  13. B. Narasimham, S. Hatami, A. Anvar, D. M. Harris, A. Lin, J. K. Wang, I. Chatterjee, K. Ni, B. L. Bhuva, R. D. Schrimpf, R. A. Reed, and M. W. McCurdy, “Bias dependence of single-event upsets in 16nm FinFET D-flip-flops,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2578-2584, Dec. 2015
  14. E. X. Zhang, I. K. Samsel, N. C. Hooten, W. G. Bennett, E. D. Funkhouser, K. Ni, D. R. Ball, M. W. McCurdy, D. M. Fleetwood, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. Linten, and J. Mitard, “Heavy-Ion and Laser Induced Charge Collection in SiGe Channel pMOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 61, pp. 3187-3192, Dec. 2014

Conference Presentations

  1. K. Ni, G. Eneman, E. Simoen, A. Mocuta, N. Collaert, A. Thean, R. D. Schrimpf, R. A. Reed, and D. M. Fleetwood, “Electrical effects of a single extended defect in MOSFETs,” IMEC Program Technical Week, Leuven, Belgium, Oct. 2015
  2. K. Ni, E. X. Zhang, I. K. Samsel, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, A. L. Sternberg, M. W. McCurdy, S. Ren, T. P. Ma, L. Dong, J. Y. Zhang, and P. D. Ye, “Charge collection mechanisms in GaAs MOSFETs,” IEEE Nuclear Science and Space Radiation Effects Conference, Boston, MA, July 2015
  3. K. Ni, E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T. W. Kim, J. Lin, and J. A. del Alamo, “Single event transient response of InGaAs MOSFETs,” IEEE Nuclear Science and Space Radiation Effects Conference, Paris, France, July 2014
  4. I. K. Samsel, E. X. Zhang, K. Ni, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, R. A. Weller, M. W. McCurdy, and M. L. Alles, “Physical mechanisms for radiation-induced effects in non-silicon channel CMOS devices,” GOMACTech, St. Louis, Mo, March 2015 (best poster award)

 

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