Journal Publications
- K. Ni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, “Gate bias and geometry dependence of total-ionizing-dose effects in InGaAs quantum-well MOSFETs,” IEEE, Trans. Nucl. Sci., (pending submission)
- K. Ni, G. Eneman, E. Simoen, A. Mocuta, N. Collaert, A. Thean, R. D. Schrimpf, R. A. Reed, and D. M. Fleetwood, “Electrical effects of a single extended defect in MOSFETs,” (submitted to IEEE Trans. Electron Devices)
- K. Ni, E. X. Zhang, I. K. Samsel, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, A. L. Sternberg, M. W. McCurdy, S. Ren, T. P. Ma, L. Dong, J. Y. Zhang, and P. D. Ye, “Charge collection mechanisms in GaAs MOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2752-2759, Dec. 2015
- K. Ni, E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T. W. Kim, J. Lin, and J. A. del Alamo, “Single event transient response of InGaAs MOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 61, pp. 3550-3556, Dec. 2014
- H. Zhang, H. Jiang, T. R. Assis, S. Ball, K. Ni, J. S. Kauppila, R. D. Schrimpf, L. W. Massengill, B. L. Bhuva, B. Narasimham, S. Hatami, A. Anvar, A. Lin, and J. K. Wang, “Temperature dependence of soft-error-rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies,” IEEE International Reliability Physics Symposium (submitted)
- Y. S. Puzyrev, X. Shen, K. Ni, C. X. Zhang, J. Hachtel, B. Choi, M. F. Chisholm, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Memristive switching of self-assembled ZnO nanorods,” J. Appl. Phys. (pending submission)
- S. Ren, H. Wu, R. Jiang, M. Bhuiyan, K. Ni, J. Chen, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye and T. P. Ma, “Total ionizing dose effects in ultra-thin body Ge on insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel,” IEEE, Trans. Nucl. Sci., (pending submission)
- S. Ren, M. Bhuiyan, J. Zhang, M. Si, R. Jiang, K. Ni, X. Wan, S. Chang, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, and T. P. Ma, “Total ionizing dose effects in GaAs MOSFETs with La based epitaxial gate dielectrics,” IEEE, Trans. Nucl. Sci., (pending submission)
- C. Claeys, E. Simoen, G. Eneman, K. Ni, A. Hikavyy, R. Loo, S. Gupta, C. Merckling, A. Alian, and M. Caymax, “Review-device assessment of electrically active defects in high-mobility materials,” ECS J. Solid State Sci. Technol. Vol. 5, pp. 3149-3165, 2016
- T. R. Assis, K. Ni, J. S. Kauppila, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, S. J. Wen, R. Wong, and C. Slayman, “Estimation of single-event induced collected charge for multiple transistors using analytical expressions,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2853-2859, Dec. 2015
- S. Ren, M. W. Si, K. Ni, X. Wan, J. Chen, S. Chang, X. Sun, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, S. Cui, and T. P. Ma, “Total ionizing dose effect in extremely scaled ultra-thin channel nanowire gate all around InGaAs MOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2888-2893, Dec. 2015
- I. K. Samsel, E. X. Zhang, A. L. Sternberg, K. Ni, R. A. Reed, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, D. Linten, J. Mitard, L. Witters, and N. Collaert, “Charge collection mechanisms of Ge-channel bulk pMOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2725-2731, Dec. 2015
- B. Narasimham, S. Hatami, A. Anvar, D. M. Harris, A. Lin, J. K. Wang, I. Chatterjee, K. Ni, B. L. Bhuva, R. D. Schrimpf, R. A. Reed, and M. W. McCurdy, “Bias dependence of single-event upsets in 16nm FinFET D-flip-flops,” IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp. 2578-2584, Dec. 2015
- E. X. Zhang, I. K. Samsel, N. C. Hooten, W. G. Bennett, E. D. Funkhouser, K. Ni, D. R. Ball, M. W. McCurdy, D. M. Fleetwood, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. Linten, and J. Mitard, “Heavy-Ion and Laser Induced Charge Collection in SiGe Channel pMOSFETs,” IEEE, Trans. Nucl. Sci., Vol. 61, pp. 3187-3192, Dec. 2014
Conference Presentations
- K. Ni, G. Eneman, E. Simoen, A. Mocuta, N. Collaert, A. Thean, R. D. Schrimpf, R. A. Reed, and D. M. Fleetwood, “Electrical effects of a single extended defect in MOSFETs,” IMEC Program Technical Week, Leuven, Belgium, Oct. 2015
- K. Ni, E. X. Zhang, I. K. Samsel, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, A. L. Sternberg, M. W. McCurdy, S. Ren, T. P. Ma, L. Dong, J. Y. Zhang, and P. D. Ye, “Charge collection mechanisms in GaAs MOSFETs,” IEEE Nuclear Science and Space Radiation Effects Conference, Boston, MA, July 2015
- K. Ni, E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T. W. Kim, J. Lin, and J. A. del Alamo, “Single event transient response of InGaAs MOSFETs,” IEEE Nuclear Science and Space Radiation Effects Conference, Paris, France, July 2014
- I. K. Samsel, E. X. Zhang, K. Ni, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, R. A. Weller, M. W. McCurdy, and M. L. Alles, “Physical mechanisms for radiation-induced effects in non-silicon channel CMOS devices,” GOMACTech, St. Louis, Mo, March 2015 (best poster award)