Spotlight Publication: “3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs” published in IEEE Transactions on Electron Devices
“3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs” published in IEEE Transactions on Electron Devices has been selected as a VINSE spotlight publication.
About the author: Mahmud Reaz earned his Ph.D. in Interdisciplinary Materials Science in July 2021 under the supervision of Prof. Ronald D Schrimpf. Mahmud studied the fabrication, characterization, and simulation of materials and devices from a reliability standpoint. His research empowered reliability analysis of the semiconductor devices, ICs, components, and SOCs through combining device design and characterization data with the theories on the physical mechanisms for failure. Mahmud collaborated with the experts to bring together the knowledge related to physics, semiconductors, fabrication processes, and quantum phenomena to develop a semiclassical transport model for device simulation. His recent publications revealed the barriers in scaling gate-all-around Si technology while investigating pathways for the hot electron induced degradation in mainstream electronic devices and ICs. Mahmud is currently working as a research scientist in MicroChip Technology studying the reliability aspect of the FPGA design and validation.