2024
[1] A. Dodson, H. Wu, A. Rai, S. Apte, A. O’Hara, B. Lawrie, Y. Wang, A. Ueda, H. Krzyzanowskam M. Titze, J. Davidson, A. Hmelo, A. B. Posadas, A. Demkov, S. T. Pantelides, L. C. Feldman, N. H. Tolk, “Phonon-mediated temperature dependence of Er3+ optical transitions in Er2O3.” Communications Physics 7, 2024.
[2] H. Wang, H. Guo, R. Guzman, N. JiaziLa, K. Wu, A. Wang, X. Liu, L. Liu, L. Wu, J. Chen, Q. Huan, W. Zhou, H. Yang, S. T. Pantelides, L. Bao, H-J. Gao, “Ultrafast Non-volatile Floating-gate Memory Based on All-two-Dimensional Materials.” Advanced Materials 36, 2311652, 2024
[3] D. M. Fleetwood ,X. Li ,E. X. Zhang, R. D. Schrimpf, S. T. Pantelides, “Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs.” IEEE Transactions on Electron Devices 71, 1024-1030, 2024.
[4] D-L. Bao, M. Xu, A-W. Li, G. Su, W. Zhou, S. T. Pantelides, “Phonon vortices at heavy impurities in two-dimensional materials.” Nanoscale Horizons 9, 248-253, 2024.
[5] A. Senarath, S. Islam, A. Sengupta, M. W. McCurdy. T. Anderson, A. Jacobs, R. Kaplar, D. R. Ball, E. X. Zhang, S. T. Pantelides, R. A. Reed, M. A. Ebrish, D. M. Fleetwood, J. D. Caldwell, R. D. Schrimpf, “Single Event Burnout in Homojunction GaN PiN Diodes with Hybird Edge Termination Design.” Applied Physics Letters 124, 132101, 2024.
[6] D. M. Fleetwood, E. X. Zhang, R. D. Schrimpf, S. T. Pantelides, S. Bonaldo, “Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices.” IEEE Transactions on Nuclear Science 71, 555-568, 2024.
[7] X. Zhang, Y.-T. Zhang, -P. Wang, S. Li, S. Du, Y.-Y. Zhang, S. T. Pantelides, “Structure and mechanical properties of monolayer amorphous carbon and boron nitride.” Physical Review B 109, 17406, 2024.
[8] A. O’Hara, R. Schrimpf, D. M. Fleetwood, and S. T. Pantelides,“Defect dynamics in the presence of excess energetic carriers and high electric fields in wide-gap semiconductors.” Journal of Applied Physics 135, 195701, 2024.
[10] N. G. Richardson, A. O’Hara, and S. T. Pantelides, “Generation of out-of-plane ferroelectric behavior in a one-atom-thick monolayer.” 2D Materials 11, 035019, 2024.
[11] E. R. Hoglund, H. A. Walker, Md. K. Hussain, D.-L. Bao, H. Ni, A. Mamun, J. Baxter, J. D. Caldwell, A. Khan, S. T. Pantelides, P. E. Hopkins, J. A. Hachtel, “Non-equivalent Atomic Vibrations at Interfaces in a Polar Superlattice.” Advanced Materials 36, 2402925, 2024.
[12] Q. Yang, Y-P. Wang, X-L. Shi, X. Li, E. Zhao, Z-G. Chen, J. Zou, K. Leng, Y. Cai, L. Zhu, S. T.Pantelides, J. Lin, “Constrained patterning of orientated metal chalcogenide nanowires and theirgrowth mechanism.” Nature Communications 15, 6074, 2024.
[13] M. J. Swamynadhan, A. O’Hara, S. Ghosh, S. T. Pantelides, “Engineering colllinear
magnetization in hexagonal LuFeO3 and magnetoelectric control of skyrmions in hexagonal 2D epliayers.” Advanced Functional Materials, 2400195, 2024.
[14] K. Wu, H. wang, M. Yang, L. Liu, Z. Sun, G. hu, Y. Song, X. Han, J. Guo, K. Wu, B. Feng, C. Shen, Y. Huang, Y. Shi, Z. Cheng, H. Yang, L. Bao, S. T. Pantelides, H-J. Gao, “Gold-template-assisted mechanical exfoliation of large-area 2D layers enables efficient and precise construction of moiré superlattices.” Advanced Materials 36, 2313511, 2024.
2023
[1] B. Tuttle, N. J. Karom, A. O’Hara, R. Schripf, S. T. Pantelides, “Atomic-displacement threshold energies and defect generation in irradiated β-Ga2O3: A first-principles investigation”, J. Appl. Phys., 133, 015703 (2023).
[2] R. M. Cadena, D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, B.R. Tuttle, S. T. Pantelides, A. F. Witulski, K. F. Galloway, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf, “Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes”, IEEE Trans.Nucl. Sci., 70, 363 (2023).
[3] X. Jin, A. O’Hara, Y.-Y. Zhang, S. Du, S. T. Pantelides, “Designing strong and tunable magnetoelectric coupling in 2D trilayerheterostructures”, 2D Mater., 10, 015007 (2023).
[4] E. Hoglund, D.-L. Bao, A. O’Hara, T. W. Pfeifer, Md. S. B. Hoque, S. Makarem, J. M. Howe, S. T. Pantelides, P. E. Hopkins, J. A. Hachtel, “Direct Visualization of Localized Vibrations at Complex Grain Boundaries”, Adv. Mat., 35, 2208920 (2023).
[5] S. Li, Y.-P. Wang, S. Ning, K. Xu, S. T. Pantelides, W. Zhou, J. Lin, “Revealing 3D Ripple Structure and Its Dynamics in Freestanding Monolayer MoSe2 by Single-Frame 2D Atomic Image Reconstruction”, Nano Let., 23, 1298 (2023).
[6] M. Xu, D.-L. Bao, A. Li, M. Gao, D. Meng, Ang Li, S. Du, G. Su, S. J. Pennycook, S. T. Pantelides, W. Zhou, “Single-atom vibrational spectroscopy with chemical-bonding sensitivity”, Nature Mat., 22, 612 (2023).
[7] C. S. Thorton, X. Shen, B. Tuttle, X. Li, M. E. Law, S. T. Pantelides, G. T. Wang, K. S. Jones, “Phosphorus diffusion and deactivation during SiGe oxidation”, J. Appl. Phys., 133, 135301 (2023).
[8] H. Wang, L. Bao, R. Guzman, K. Wu, A. Wang, L. Liu, L. Wu, J. Chin, Q. Huan, W. Zhou, S. T. Pantelides, H.-J. Gao, “Ultrafast-Programmable 2D Homojunctions Based on vander Waals Heterostructures on a Silicon Substrate”, Adv. Mat., 35, 2301067 (2023).
[9] J. Zhang, S. Song, Y.-F. Zhang, Y.-Y. Zhang, S. T. Pantelides, S. Du, “Prediction of a monolayer spin-spiral semiconductor: CoO with a honeycomb lattice”, Chin. Phys. B., 32, 087508 (2023).
[10] D. O. Nielsen, C. G. Van de Walle, S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, M. V. Fischetti, “First-principles approach to closing the 10–100 eV gap for charge-carrier thermalization in semiconductors.” Physical Review B 108, 155203, 2023.
2022
[1] A. O’Hara, N. Balke, S. T. Pantelides, “Unique features of polarization in Ferroelectric ionic control”, Adv. Elect. Mater. 8, 2100810 (2022).
[2] Ali, Z. Wang, A. O’Hara, M. Saghayezhian, D. Shin, Y. Zhu, S. T. Pantelides, J. Zhang, “Origin of insulating and nonferromagnetic SrRuO3 monolayers”, Phys. Rev. B 105, 054429 (2022).
[3] S. M. Neumayer, M. Si, J. Li, P.-Y. Liao, L. Tao, A. O’Hara S. T. Pantelides, P. Ye, P. Maksymovych, N. Balke, “Ionic control over ferroelectricity in 2D layered van der Waals capacitors”, ACS Appl. Mater. Interfaces 14, 3018 (2022).
[4] S. M. Neumayer, Z. Zhao, A. O’Hara, M. A. McGuire, M. A. Susner, S. T. Pantelides, P. Maksymovych, N. Balke, “Nanoscale Control of Polar Surface Phases in Layered van der Waals CulnP2S6”, ACS Nano 16, 2452 (2022).
[5] D. M. Fleetwood, E. X. Zhang, R. D. Schrimf, S. T. Pantelides, “Radiation effects in AIGaN/GaN HEMTs”, IEEE Trans.Nucl. Sci. 69, 1105 (2022).
[6] S. M. Neumayer, M. Susner, M. McGuire, S. T. Pantelides, S. Kalnaus, P. Maksymovych, N. Balke, “Experimental investigation of ferroelectric behavior in van der Waals layered materials under in-plane strain”, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 68, 253 (2022).
[7] E. R. Hoglund, D.-L. Bao, A. O’Hara, S. Makarem, Z. T. Piontkowski, , J. R. Matson, A. K. Yadav, R. C. Haisimaier, R. Engel-Herbert, J. F. Ihlefeld, J. Ravichandran, R. Ramesh, J. D. Caldwell, T. E. Beechem, J. A. Tomko, J. A. Hachtel, S. T. Pantelides, P. E. Hopkins, J. M. Howe, “Nanoscale phonon spectroscopy reveals emergent interface vibrational structure of superlattices”, Nature 601, 556 (2022).
[8] D-L. Bao, A. O’Hara, S. Du, S. T. Pantelides, “Tunable, Ferroelectricity-Inducing, Spin-Spiral Magnetic Ordering in monolayer FeOCl”, Nano Lett. 22, 3598-3603 (2022).
[9] C. S. Thornton, B. Tuttle, E. Turner, M E. Law, S. T. Pantelides, G. T Wang, K. S. Jones, “The diffusion mechanism of Ge during oxidation of Si/SiGe nanofins”, ACS Appl. Mater. Interfaces 14, 29422-29430 (2022).
[10] Q. Guo, T. Feng, M. Lance, K. A. Unocic, S. T. Pantelides, E. Lara-Curzio, “Evolution of the structure and chemical composition of the interface between multi-component silicate glasses and YSZ after 40,000-hours exposure in air at 800°C”, J. Eur. Ceram 42, 1576 (2022).
[11] J. Lu, S. Song, S. Zhang, Y. Song, Y. Cao, Z. Wang, L. Huang, H. Lu, Y.-Y. Zhang, S. T. Pantelides, S. Du, X. Lin, H.-J. Gao, “Intrinsically patterned corrals in monolayer Ag5Se2 and selective molecular co-adsorption”, Nano Res, 1 (2022).
[12] Y-T. Zhang, Y.-P. Wang, Y.-Y. Zhang, S. Du, S. T. Pantelides, “Therman transport of monolayer amorphous carbon and boron nitride”, Appl. Phys. Lett. 120, 222201 (2022).
[13] Z. Zhou, X. Zhao, L. Wu, H. Liu, J. Chen, C. Xi, Z. Wang, E. Liu, W. Zhou, S. J. Pennycook, S. T. Pantelides, X.-G. Zhang, L. Bao, H.-J. Gao, “Dimensional crossover in self-intercalated antiferromagnetic V5S8 nanoflakes”, Phys. Rev. B 105, 235433 (2022).
[14] S. T. Pantelides, D. G. Walker, M. Reaz, M. V. Fischetti, R. D. Schrimpf, “The foundations of Shockley’s equation for the average electron-hole-pair creation energy in semi-conductors”, Appl. Phys. Lett. 121, 042104 (2022).
[15] Y.-T. Zhang, Y.-P. Wang, X. Zhang, Y.-Y. Zhang, S. Du, S. T. Pantelides, “Structure of amorphous two-dimensional materials: Elemental monolayer amorphous carbon versus binary monolayer amorphous boron nitride”, Nano Lett. 19, 8018 (2022).
[16] G. Wang, Y.-P. Wang, S. G. Li, Q. S. Yang, D. Li, S. T. Pantelides, J. H. Lin, “Engineering the Crack Structure and Fracture Behavior in Monolayer MoS2 By Selective Creation of Point Defects”, Adv. Sci., 9, 2200700 (2022).
[17] M. Checa, X. Jin, R. Millan-Solsona, S. M. Neumayer, M. A. Susner, M. A. McGuire, A. O’Hara, G. Gomila, P. Maksymovych, S. T. Pantelides, “Revealing fast cu-ion transport and enhanced conductivity at the CulnP2S6-In4/3P2S6 Heterointerface”, ACS Nano, 16, 15347 (2022).
[18] W. Zhang, Y. Lou, H. Dong, F. Wu, J. Tiwari, Z. Shi, T. Feng, S. T. Pantelides, B. Xu, “Phase-engineered high-entropy metastable FCC Cu 2− y Ag y (In x Sn 1− x) Se 2 S nanomaterials with high thermoelectric performance”, Chem. Sci., 13, 10461 (2022).
[19] A. O’Hara, L. Tao, S. M. Neumayer, P. Maksymovych, N. Balke, S. T. Pantelides, “Effects of thin metal contacts on few-layer van der Waals ferrielectric CuInP2S6″ J. Appl. Phys., 132, 114102 (2022).
[20] Z. Ali, M. Saghayezhian, Z. Wang, A. O’Hara, D. Shin, W. Ge, Y.-T. Chan, Y. Zhu, W. Wu, S. T. Pantelides, J. Zhang, “Emergent ferromagnetism and insulator-metal transition in δ-doped ultrathin ruthenates”, npj Quantum Mater., 7, 108 (2022).
2021
[1] Feng, Y. Wang, A. Herklotz, M. F. Chisholm, T. Z. Ward, P. C. Snijders, S. T. Pantelides, “Determination of the rutile transition-metal-oxide surface structures by a universal scanning-tunneling-microscopy contract reversal”, Phys. Rev. B. 103, 035409 (2021).
[2] M. Neumayer, M. Susner, M. McGuire, S. T. Pantelides, S. Kalnaus, P. Maksymovych, N. Balke, “Lowering of TC in van der Waals layered materials under in-plane strain”, IEEE Trans. Ultrason. Ferroelectr. Freq. Control., 68, 253 (2021).
[3] Zheng, T. Feng, J. A. Hachtel, J. Yan, R. Ishikawa, N. Shibata, Y. Ikuhara, J. C. Idrobo, B. C. Sales, S. T. Pantelides, M. Chi, “Direct visualization of anionic electrons in an electride reveals inhomogeneities”, Sci. Adv. 7, eabe6819 (2021).
[4] Shin, G. Wang, M. Han, Z. Lin, A. O’Hara, F. Chen, J. Lin, S. T. Pantelides, “Preferential hole defect formation in monolayer WSe2 by electron-beam irradiation”, Phys. Rev. Mater. 5, 044002 (2021).
[5] Reaz, A. M. Tonigan, K. Li, M. B. Smith, M. W. Rony, M. Gorchichko, A. O’Hara, J. Fang, M. L. Alles, R. A. Weller, R. A. Reed, M. V. Fischetti, S. T. Pantelides, S. L. Weeden-Wright, R. D. Schrimpf, “3-D full-band monte-carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs”, IEEE Trans. Elect. Dev. 68, 2556 (2021).
[6] Wu, A. Wang, J. Shi, J. Yan, Z. Zhou, C. Bian, J. Ma, R. Ma, H. Lui, J. Chen, Y. Huang, W. Zhou, L. Bao, M. Ouyang, S. J. Pennycook, S. T. Pantelides, H.-J. Gao, “Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices”, Nat. Nanotechnol. 16, 882 (2021).
[7] Fleetwood, A. O’Hara, T. Stellwag Mayer, M. R. Melloch, S. T. Pantelides, “Defect and impurity-complex depassivation during electron-beam irradiation of GaAs”, IEEE Trans. Nucl. Sci. 68, 1548 (2021).
[8] Kouser, S. T. Pantelides, “Quantum physical reality of polar-nonpolar oxide heterostructures”, Phys. Rev. B 104, 075411 (2021).
[9] M. Neumayer, L. Tao, A. O’Hara, M. A. Susner, M. A. McGuire, P. Maksymovych, S. T. Pantelides, N. Balke, “The concept of negative capacitance in ionically conductive van der waals ferroelectrics”, Adv. Ener. Mater. 11, 2103493 (2021).
[10] Song, K. Qian, L. Tao, Z. Wang, H. Guo, H. Chen, S. Zhang, Y.-Y. Zhang, X. Lin, S. T. Pantelides, S. Du, H. J. Gao, “Intrinsically honeycomb-patterned hydrogenated Graphene”, Small 18, 2102687 (2021).
[11] Zhu, L. Tao, X. Chen, Y. Ma, S. Ning. J. Zhou, X. Zhao, M. Bosman, Z. Liu, S. Du, S. T. Pantelides, W. Zhou, “Anisotropic point defects in rhenium diselenide monolayers”, iScience 24, 103456 (2021)
2020
[1] Q. Wang, Z. L. Zhao, Z. Zhang, T. Feng, R. Zhong, H. Xu, S. T. Pantelides, M. Gu, “Large-scale fabrication of sub-2nm intermetallic ordered Pt2In clusters for oxygen reduction reaction”, Adv. Sci. 7, 1901279 (2020).
[2] J. A. Brehm, S. Neumayer, M. Chyasnavichus, M. A. Susner, M. A. McGuire, S. V. Kalinin, S. Jesse, P. Ganesh, S. T. Pantelides, P. Maksymovych, N. Balke, “Tunable quadruple-well ferroelectricity in a van-der-Waals crystal”, Nat. Mater. 19, 43 (2020).
[3] T. Feng, X. Wu, X. Yang, P. Wang, L. Zhang, X. Du, X. Wang, S. T. Pantelides, “Thermal conductivity of HfTe5: A critical revisit”, Adv. Funct. Mater. 30, 1907286 (2020).
[4] C.-T. Toh, H. Zhang, J. Lin, A. S. Mayorov, Y.-P. Wang, C. Orofeo, D. B. Ferry, H. Anderson, N. Kakenov, H. Sims, K. Suenaga, S. T. Pantelides, B. Oezilmaz, “Synthesis and properties of free-standing monolayer amorphous carbon”, Nature 577, 199 (2020).
[5] R. Ma, J. Ma, J. Yan, L. Wu, W. Guo, S. Wang, Q. Huan, L. Bao, S. T. Pantelides, H.-J. Gao, “Wrinkle-induced highly conductive channels in Graphene on SiO2/Si substrate”, Nanoscale 22, 12038 (2020).
[6] X. Jin, Y.-Y. Zhang, S. T. Pantelides, S. Du, “Integration of Graphene and two-dimensional ferroelectrics: Properties and related functional devices”, Nanoscale Horizons, (2020) (online).
[7] R. Wu, D.-L. Bao, L. Yan, Y. Wang, J. Ren, Y.-F. Zhang, Q. Huan, Y.-Y. Zhang, S. X. Du, S. T. Pantelides, H.-J. Gao, “Direct Visualization of Hydrogen-transfer Intermediate States by Scanning Tunneling Microscopy”, J. Phys. Chem. Lett. 11, 1536 (2020).
[8] R. Zhang, J. Liu, Y.-Y. Zhang, S. Du, S. T. Pantelides, “Unusual anisotropic thermal expansion in multilayer SnSe leads to positive-to-negative crossover of Poisson’s ratio”, Appl. Phys. Lett. 116, 083101 (2020).
[9] L. Tao, Y.-Y. Zhang, S. Du, S. T. Pantelides, H.-J. Gao, “Tuning the catalytic activity of quantum nutcracker for hydrogen dissociation”, Surfaces 3, 40 (2020).
[10] J. Zhou, J. Lin, H. Sims, C. Jiang, C. Cong, J. A. Brehm, Z. Zhang, L, Niu, Y. Chen, Y. Zhou, Y. Wang, F. Liu, C. Zhu, T. Yu, K. Suenaga, R. Mishra, S. T. Pantelides, Z.-G. Zu, W. Gao, Z. Liu, W. Zhou, “Synthesis of co‐doped MoS2 monolayers with enhanced valley splitting”, Adv. Mater. 32, 1906536 (2020).
[11] H. Guo, R. Zhang, H. Li, X. Wang, H. Lu, K. Qian, G. Li, L. Huang, X. Lin, Y.-Y. Zhang, H. Ding, S. Du, S. T. Pantelides, H.-J. Guo, “Sizable band gap in epitaxial bilayer Graphene induced by Silicene intercalation”, Nano Lett. 20, 2674 (2020).
[12] L. Wu, J. Shi, Z. Zhou, J. Yan, A. Wang, C. Bian, J. Ma, R. Ma, H. Liu, J. Chen, Y. Huang, w. Zhou, L. Bao, M. Ouyang, S. T. Pantelides, H.-J. Gao, “InSe/hBN/Graphite heterostructure for high-performance 2D electronics and flexible electronics”, Nano Res. 13, 1 (2020).
[13] Y. Zhou, S. Kouser, A. Y. Borisevich, S. T. Pantelides, S. J. May, “Evidence for interfacial octahedral coupling as a route to enhance magnetoresistance in Perovskite Oxide superlattices”, Adv. Mater. Interfaces 7, 1901576 (2020).
[14] K. Qian, L. Gao, X. Chen, H. Li, S. Zhang, X.-L. Zhang, S. Zhu, J. Yan, D. Bao, L. Cao, J.-A. Shi, J. Lu, C. Liu, J. Wang, T. Qian, H. Ding, L. Gu, W. Zhou, Y.-Y. Zhang, X. Lin, S. Du, M. Ouyang, S. T. Pantelides, H.-J. Gao, “Air-stable monolayer Cu2Se exhibits a purely thermal structural phase transition”, Adv. Mater. 32, 1908314 (2020).
[15] T. Feng, A. O’Hara, S. T. Pantelides, “Quantum prediction of ultra-low thermal conductivity in Lithium intercalation materials”, Nano Energy 75, 104916 (2020).
[16] S. M. Neumayer, L. Tao, A. O’Hara, J. Brehm, M. Si, P.-Y. Liao, T. Feng. S. V. Kalinin, P. D. Ye, S. T. Pantelides, P. Maksymovych, N. M. Balke, “Alignment of polarization against an electric field in van der Waals ferroelectrics”, Phys. Rev. A. 13, 064063 (2020).
[17] R. Vasudevan, S. M. Neumayer, M. A. Susner, M. A. McGuire, S. T. Pantelides, P. Maksym ovych, D. N. Leonard, N. Balke, A. Y. Borisevich, “Domains and topological defects in layered ferroelectric materials”, ACS Appl. Nano Mater. 3, 8161 (2020).
[18] A. Dziaugys, K. Kelley, J. A. Brehm, A. Puretzky, T. Feng, S. Neumayer, M. Chyasnavichyus, E. A. Eliseev, J. Banys, Y. Vysochanskii, F. Ye, B. Chakoumakos, M. A. McGuire, S. V. Kalinin, G. Panchapakesan, S. T. Pantelides, N. Balke, A. N. Morozovska, P. Maksymovych, “Piezoelectrically domain walls in van der Waals ferroelectric CuInP2Se6”, Nature Comm. 11, 1 (2020).
[19] S. M. Neumayer, J. Brehm, L. Tao, A. O’Hara, P. Ganesh, S. Jesse, M. Susner, M. McGuire, S. T. Pantelides, P. Maksymovych, N. Balke, “Local strain and polarization mapping in ferrielectric materials”, ACS Appl. Mater. Inter. 12, 38546 (2020)
[20] L. Liu, L. Wu, A. Wang, H. Liu, R. Ma, K. Wu, J. Chen, Z. Zhou, Y. Tian, H. Yang, C.-M. Shen, L. Bao, Z. Qin, S. T. Pantelides, H.-J. Gao, “Ferroelectric-gated InSe photodetectors with high on/off ratios and photoresponsivity”, Nano Lett. 20, 6666 (2020).
[21] K. Appavoo, J. Nag, B. Wang, W. Luo, G. Duscher, E. A. Payzant, M. Y. Sfeir, S. T. Pantelides, R. F. Haglund Jr., “Doping-driven electronic and lattice dynamics in the phase-change material vanadium dioxide”, Phys. Rev. B. 102, 115148 (2020).
[22] S. M. Neumayer, A. Morazovska, E. Eliseev, J. Brehm, M. A. Susner, M. A. McGuire, S. T. Pantelides, P. Maksymovych, N. Balke, “The concept of negative capacitance in ionically conductive van-der-Waals ferroelectrics”, Adv. Ener. Mater. 10, 2001726 (2020).
[23] H. Guo, X. Wang, L. Huang, X. Jin, Z.-Z. Yang, Z. Zhou, H. Hu, Y.-Y. Zhang, H. Lu, Q. Zhang, C. Shen, X. Lin, L. Gu, Q. Dai, L.-H. Bao, S. Du, W. Hofer, S. T. Pantelides, H.-J. Gao, “Insulating SiO2 under centimeter-scale, single-crystal, single-crystal Graphene enables electronic-device fabrication”, Nano Lett 20, 8584 (2020).
[24] O. S. Ovchinnikov, A. O’Hara, S. Jesse, B. M. Hudak, S.-Z. Yang, A. r. Lupini, M. F. Chisholm, W. Zhu, s. V. Kalinin, A. Y. Borisevich, S. T. Pantelides, “Detection of defects in atomic-resolution images of materials using cycle analysis”, Adv. Struct. Chem. Imag. 6, 1 (2020).
2019
[1] J. Fang, M. Reaz, S. L Weeden-Wright, R. D. Schrimpf, R. A. Reed, R. A. Weller, M. V Fischetti, and S. T. Pantelides, “Understanding the average electron-hole-pair creation energies in Silicon and Germanium from full-band Monte Carlo simulations”, IEEE Trans. Nucl. Sci. 66, 444 (2019).
[2] P. Wang, H. Kalita, A. Krishnaprasad, D. Dev, A. O’Hara, R. Jiang, E. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, and T. Roy, “Total-ionizing-dose response of MoS2 transistors with ZrO2 and h-BN gate dielectrics”, IEEE Trans. Nucl. Sci. 66, 420 (2019).
[3] J. Liu, and S. T. Pantelides, “Pyroelectric response and temperature-induced α-β phase transitions in α-III2VI3 (III=Al, Ga, In; VI=S, Se) monolayers”, 2D Mater. 6, 025000 (2019).
[4] S. M. Neumayer, E. A. Eliseev, M. A. Susner, A. Tselev, B. J. Rodriguez, J. A. Brehm, S. T. Pantelides, G. Panchapakesan, S. Jesse, S. V. Kalinin, M. A. McGuire, A. N. Morozovska, P. Maksymovych, N. Balke, “Giant negative electrostriction and dielectric tenability in a van der Waals layered ferroelectric”, Phys. Rev. Mater. 3, 024401 (2019).
[5] M. Hong, Y. Wang, T. Feng, Q. Sun, S. Xu, S. Matsumura, S. T. Pantelides, J. Zou, and Z.-G. Chen, “Strong intrinsic phonon-phonon interactions securing extraordinary thermoelectric Ge1-xSbxTe with Zn-Doping induced band alignment”, J. Am. Chem. Soc. 141, 1742 (2019).
[6] Z. Cheng, A. Weidenbach, T. Feng, M. B. Tellekamp, S. Howard, M. J. Wahila B. Zivasatienraj, B. Foley, S. T. Pantelides, L. F. J. Piper, W. Doolittle, and S. Graham, “Diffusion-driven ultralow thermal conductivity in amorphous Nb2O5”, Phys. Rev. Mater. 3, 025002 (2019.
[7] M. Jin, X.-L. Shi, T. Feng, W. Liu, H. Feng, S. T. Pantelides, J. Jiang, Y. Chen, Y. Du, J. Zou, Z.-G. Chen, “Super large Sn1-xSe single crystals with excellent thermoelectric performance”, ACS Appl. Mater. Interfaces 11, 8051 (2019).
[8] S.-Z. Yang, W.-W. Sun, Y.-Y. Zhang, Y. Gong, M. Oxley, A. R. Lupini, P. Ajayan, M. F. Chisholm, S. T. Pantelides, W. Zhou, “Direct cation exchange in monolayer MoS2 via ‘explosive’ recombination-enhanced migration”, Phys. Rev. Lett. 122, 106101 (2019).
[9] X. Shi, A. Wu, T. Feng, K. Zheng, W. Liu, M. Hong, Q. Sun, S. T. Pantelides, Z.-G. Cheng, and J. Zou, “High thermoelectric-performance p-type polycrystalline Cd-doped SnSe achieved by the combination of cation vacancy and localized lattice engineering”, Adv. Energ. Mater. 9, 1803242 (2019).
[10] J. A. Hachtel, S. Y. Cho, R. B. Davidson II, M. F. Chisholm, R. F. Haglund, J.-C. Idrobo, S. T. Pantelides, B. J. Lawrie, “Spatially and spectrally resolved orbital angular momentum interactions in plasmonic vortex generators”, Light: Science & Applications 8, 33 (2019).
[11] J. Fang, M. V. Fischetti, R. D. Schrimpf, E. Bellotti, S. T. Pantelides, “Electron transport properties of AlxGa1-xN/GaN transistors based on first-principles calculations and Boltzmann-equation Monte Carlo simulation”, Phys. Rev. Appl. 11, 044045 (2019).
[12] M. Saghayezhian, S. Kouser, Z. Wang, H. Guo, R. Jin, J. Zhang, Y. Zhu, S. T. Pantelides, and E. W. Plummer, “Atomic-scale determination of spontaneous magnetic reversal in oxide heterostructures”, Proc. Natl. Acad. Sci. U.S.A. 116, 10309 (2019.
[13] Z. Cheng, T. Bai, J. Shi, T. Feng, Y. Wang, M. Mecklenburug, C. Li, K. D. Hobart, T. I. Feygelson, M. J. Tadjer, B. B. Pate, B. M. Foley, L. Yates, S. T. Pantelides, B. A. Cola, M. Goorsky, S. Graham, “Tunable thermal energy transport across diamond membranes and diamond-Si interfaces by nanoscale graphoepitaxy”, ACS Appl. Mater. Inter. 11, 18517 (2019).
[14] B. M. Hudak, W. Sun, J. Mackey, A. Sehilioglu, F. Dynys, S. T. Pantelides, and B. S. Guiton, “Observation of square-lanar distortion in Lanthanide-doped Skutterudite crystals”, J. Phys. Chem. 123, 14632 (2019).
[15] A. D. Oyedele, S. Yang, T. Feng, Y. Gu, A. Haglund, A. A. Puretzky, D. Briggs, C. Rouleau, M. F. Chisholm, R. R. Unocic, D. Mandrus, D. B. Geohegan, S. T. Pantelides, K. Xiao, “Defect-mediated phase transformation in anisotropic 2D PdSe2 crystals for seamless electrical contact devices”, J. Amer. Chem. Soc. 141, 8928 (2019).
[16] B. R. Tuttle, T. Summers, C. Barger, J. Noonan, S. T. Pantelides, “Theory of photo-ionization defects in nano-porous SiC alloys”, J. Appl. Phys. 125, 215703 (2019).
[17] J. Bonacum, A. O’Hara, J.-C. Idrobo, O. S. Ovchinnikov, R. F. Haglund, S. T. Pantelides, K. Bolotin, “Atomic-resolution visualization and doping effects of complex structures in intercalated bilayer Graphene”, Phys. Rev. Mater. 3, 064004 (2019).
[18] C. Gao, L. Tao, Y.-Y. Zhang, S. Du. S. T. Pantelides, J. C. Idrobo, W. Zhou, H.-J. Gao, “Spectroscopy signature of edge states in hexagonal boron nitride”, Nano Research 12, 1663 (2019).
[19] S. Yang, P. Manchanda, Y. Gong, S. T. Pantelides, W. Zhou, M. F. Chisholm, “Electronic structure and coupling of RE clusters in monolayer MoS2”, Microsop. Microanal. 25, 506 (2019).
[20] Z.-L. Liu, B. Lei, Z.-L. Zhu, L. Tao, J. Qi, D.-L. Bao, X. Wu, L. Huang, Y.-Y. Zhang, X. Lin, Y.-L. Wang, S. Du, S. T. Pantelides, and H.-J. Gao, “Spontaneous formation of 1D pattern in monolayer VSe2 with dispersive adsorption of Pt atoms for HER catalysis”, Nano Lett. 19, 4897 (2019).
[21] R.-S. Ma, J. Ma, J. Yan, L. Wu, H. Liu, W. Guo, S. Wang, Q. Huan, L. Bao, S. Du, S. T. Pantelides, H. J. Gao, “Direct probing of imperfection-induced electrical degradation in millimeter-scale Graphene on SiO2 substrates”, 2D Mater. 6, 045033 (2019).
[22] H. Chen, X.-L. Zhang, D. Wang, D.-L. Bao, Y. Que, W. Xiao, S. Du, M. Ouyang, S. T. Pantelides, H.-J. Gao, “Atomically-precise, custom-design origami Graphene nanostructures”, Science 365, 1036 (2019).
[23] H. Guo, X. Wang, K. Qian, J. Yan, L. Bao, H. Lu, Y. Zhang, G. Li, L. Huang, X. Lin, S. Du, S. T. Pantelides, H.-J. Gao, “Centimeter-scale, single-crystalline, AB-stacked bilayer graphene on insulating substrates”, 2D Mater. 6, 045044 (2019).
[24] J. Liu, S. Liu, B. Hanrahan, and S. T. Pantelides, “Origin of pyroelectricity in ferroelectric HfO2”, Phys. Rev. Appl. 12, 034032 (2019).
[25] H. Sims, D. N. Leonard, A. Y. Birenbaum, Z. Ge, L. Li, V. R. Cooper, M. F. Chisholm, S. T. Pantelides, “Intrinsic interfacial van der Waals monolayers and their effect on the high-temperature superconductor FeSe/SrTiO3”, Phys. Rev. B. 14, 144103 (2019).
[26] M. Dargusch, X.-L. Shi, X. Q. Tran, T. Feng, F. Somidin, X. Tan, W. Liu, K. Jack, J. Venezuela, H. Maeno, T. Toriyama, S. Matsumura, S. T. Pantelides, Z.-G. Chen, “In-situ observation of the continuous phase transition in determining the high thermoelectric performance or polycrystalline Sn0.98Se”, J. Phys. Chem. Lett. 10, 6512 (2019).
[27] M. Meng, Z. Wang, A. Fathima, S. Ghosh, M. Saghayezhian, R. Jin, Y. Zhu, S. T. Pantelides, J. Zhang, W. Plummer, and H. Guo, “Interface-induced magnetic polar metal phase in complex oxides”, Nat. Commun. 10, 5248 (2019).
[28] P. Wang, C. J. Perini, A. O’Hara, H. Gong, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, E. M. Vogel, “Total-ionizing-dose effects and proton-induced displacement damage on MoS2-interlayer-MoS2 tunnel junctions”, IEEE Trans. Nucl. Sci. 66, 420 (2019).
[29] S. Bonaldo, S. E. Zhao, A. O’hara, M. Gorchichko, E. X. Zhang, S. Gerardin, A. Paccagnella, N. Waldron, N. Collaert, D. Linten, S. T. Pantelides, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, “Low-frequency noise and total-ionizing-dose irradiation-induced defects in 16nm InGaAs FinFETs”, IEEE Trans. Nucl. Sci. 67, 210 (2019).
2018
[1] C.E. Marvinney, X. Shen, J.R. McBride, D. Critchlow, Z. Li, D.C. Mayo, R.R. Mu, S.T. Pantelides, R.F. Haglund, “Effect of material structure on photoluminescence of ZnO/MgO core-shell nanowires”, Chem. Nano. Mater. 2018 (4), 1-11, January 19, 2018.
[2] Y.-N. Wu, X.-G. Zhang, S.T. Pantelides, “Wu, Zhang and Pantelides reply to ‘Fundamental resolution of difficulties in the theory of charged point defects in semiconductors’”, Phys. Rev. Lett. 3 (120), 039604, January 19, 2018.
[3] J. Lin, J. Zhou, S. Zuluaga, P. Yu, Z. Liu, S.T. Pantelides, K. Suenaga, “Anisotropic ordering in 1T’ molybdenum and tungsten ditelluride layers alloyed with Sulphur and selenium”, ACS Nano 18 (1), 894-901, January 23, 2018.
[4] J.A. Hachtel, S.Y. Cho, R.B. Davidson II, M.F. Chisholm, R.F. Haglund, J.C. Idrobo, S.T. Pantelides, B.J. Lawrie, “Polarization- and wavelength-resolved near-field imaging of complex plasmonic modes in Archimedean nanospirals”, Opt. Lett. 4 (43), 927-930, February 15, 2018.
[5] J.C. Idrobo, A.R. Lupini, T. Feng, R.R. Unocic, F.S. Walden, D.S. Gardiner, T.C. Lovejoy, N. Delby, S.T. Pantelides, O.L. Krivanek, “Temperature Measurement by a nanoscale electron probe using energy gain and loss spectroscopy”, Phys. Rev. Lett. 9 (120), 095901, March 2, 2018.
[6] J.A. Brehm, J. Lin, J. Zhou, S.T. Pantelides, “Electron-beam-induced synthesis of hexagonal 1H-MoSe42 from square beta-FeSe decorated with Mo adatoms”, Nano Lett. 18 (3), 2016-2020, March 13, 2018.
[7] W. Zhou, Y.-Y. Zhang, J. Chen, D. Li, J. Zhou, Z. Liu, M.F. Chisholm, S.T. Pantelides, K.P. Loh, “Dislocation-driven growth of two-dimensional lateral quantum well superlattices”, Sci. Adv. 4 (3), 9096, March 23, 2018.
[8] D. L. Bao, Y.Y. Zhang, S.T. Pantelides, S.-X. Du, H.-J. Gao, “A barrierless on-surface metalation process for porphyrin-based molecules”, J. Phys. Chem. C 122 (12), 6678-6683, March 29, 2018.
[9] C. D. Liang, Y. Su, A. O’Hara, E.X. Zhang, M.L. Alles, P. Wang, S.E. Zhao, S.T. Pantelides, S.J. Koester, R.D. Schrimpf, D.M. Fleetwood, “Defects and low-frequency noise in irradiated black phosphorus MOSFETs with HfO2 gate dielectrics”, IEEE Trans. Nucl. Sci. 65 (6), 1227-1238, April 19, 2018.
[10] J. Liu, C.-Y. Lai, Y.-Y. Zhang, M. Chiesa, S.T. Pantelides, “Water wettability of graphene: Interplay betweent he interfacial water structure and the electronic structure”, RSC Adv. 8, 16918, May 8, 2018.
[11] B. M. Hudak, J. Song, H. Sims, M.C. Troparevsky, S.T. Pantelides, P.C. Snijders, A.R. Lupini, “Directed atom-by-atom assembly of dopants in silicon”, ACS Nano 12 (6), 5873-5879, May 11, 2018.
[12] J. Liu, S. T. Pantelides, “Mechanisms of pyroelectricity in thre-and two-dimensional materials”, Phys. Rev. Lett. 120 (20), 207602, May 17, 2018.
[13] B. Xu, T. Feng, Z. Li, S. T. Pantelides, and Y. Wu, “Constructing highly porous thermoelectric monoliths with high-performance and improved portability from solution-synthesized shape-controlled nanocrystals”, Nano Lett. 18 (6), 4034-4039, May 28, 2018.
[14] G. Mettela, S. Kouser, C. Sow, S. T. Pantelides, and G. U. Kulkarni, “Nobler than the noblest: Noncubic gold microcrystallites”, Angew. Chem. Int. Ed. doi:10.1002/anie.201804541, May 30, 2018.
[15] S. Zuluaga, J. Lin, K. Suenaga, S.T. Pantelides, “Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires”, 2D Mater. 5 (3), 035025, June 1, 2018.
[16] J. Whelan, M. Katsiotis, S. Stephen, G. Luckachan, A. Tharalekshmy, D. Banu, J.-C. Idrobo, S.T. Pantelides, R. Vladea, I. Banu, S. Al Hassan, “Cobalt-molybdenum single-layered nanocatalysts decorated on carbon nanotubes and the influence of preparation conditions on their hydrodesulfurization catalytic activity”, Energy Fuels, June 19, 2018.
[17] H. Chen, Y. Que, L. Tao, Y.Y. Zhang, W. Xiao, D. Wang, S.-X. Du, S.T. Pantelides, H.-J. Gao, “Recovery of edge states of graphene nanoislands on a metal substrate by silicon intercalations”, Nano Res. 11 (7), 3722-3729, July 1, 2018.
[18] V. Tzitzios, K. Dimos, S. Alhassan, A. Kouloumpis, D. Gournis, N. Boukos, R. Michra, M. Roldon, J.-C. Idrobo, S.T. Pantelides, A. Borisevich, M.a. Karakassides, G. Basina, Y. Alwahedi, H.J. Kim, M. Fardis, S. Pennycook, G. Papavasileiou, “Facile MoS2 growth on reduced graphene-oxide via liquid phase method”, Front. Mater. 5 (29), July 2, 2018.
[19] N. Balke, S. M. Neumayer, J. A. Brehm, M. A. Susner, B. J. Rodriquez, S. Jesse, S. V. Kalinin, S. T. Pantelides, M. A. McGuire, and P. Maksymovych, “Localy controlled Cu-ion transport in layered ferroelectric CuInP2S6”, ACS Appl. Mater. Interfaces 10 (32), 27188-27194, July 23, 2018.
[20] N. Huo, Y. Yang, Y.-N. Wu, X.-G. Zhang, S. T. Pantelides, G. Konstantatos, “High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression”, Nanoscale 2018, 15071-15077, July 24, 2018.
[21] H. Chen, D.-L. Bao, D. Wang, Y. Que, W. Xiao, G. Qian, H. Guo, J. Sun, Y.-Y. Zhang, S. Du, S.T. Pantelides, H.-J. Gao, “Fabrication of millimeter-scale, single-crystal one-third-hydrogenated graphene with anisotropic properties”, Adv. Mater. 30 (32), 1801838, August 6, 2018.
[22] B. Xu, T. Feng, X. Li, S.T. Pantelides, Y. Wu, “Creating zipper-like van der Waals gap discontinuity in low-temperature-processed nanostructured PbBi2nTe1+3n for enhanced phonon scattering and improved thermoelectric performance”, Angew. Chem. Int. Ed. 57 (34), 10938-10943, August 20, 2018.
[23] J. Liu, and S. T. Pantelides, “Electrowetting on two-dimensional dielectrics: A quantum molecular dynamics investigation”, J. of Phys. Cond. Matter. 30 (37), 375001, August 22, 2018.
[24] J. Liu, and S. T. Pantelides, “Anisotropic thermal expansion of group-IV monochalcogenide monolayers”, Appl. Phys. Exp. 11 (10), 101301, August 28, 2018.
[25] R. Jiang, S. Xhen, J.T. Feng, P. Wang, E.x. Zhang, J. Chen, D.M. Fleetwood, R.D. Schrimpf, S.W. kaun, E.C.H. Kyle, J.S. Speck S.T. Pantelides, “Multiple defects caused degradation after high field stress in AlGaN/GaN HEMTs”, IEEE Trans. Device Mater. Rev. 18 (3), 364-376, September 1, 2018.
[26] J. Liu, O. B. Wani, S. M Alhassan, S. T. Pantelides, “Wettability alteration and enhanced oil recovery induced by proximal adsorption of Na+, Cl-, Ca2T, and SO42- ions on calcite”, Phys. Rev. Appl. 10 (3), 034064, September 27, 2018.
[27] O. S. Ovchinnikov, A. O’Hara, R. Nicholl, K. Bolotin, J. Hachtel, A. Lupine, S. Jesse, A. Y. Borisevich, S. T. Pantelides, and S. V. Kalinin, “Theory-assisted determination of nano-rippling in atomic resolution images of angle-mismatched bilayer graphene”, 2D Mater. 5 (4), 041008, September 7, 2018.
[28] G. Sanchez-Santolino, J. Salafranca S. T. Pantelides, S. J. Pennycook, C. Leon, and M. Varela, “Localization of Yttrium segregation within YSZ grain boundary dislocation cores”, Phys. Status Solidi A 215, 1800349, October 10, 2018.
[29] L. Tao, W. Guo, Y.-Y. Zhang, Y.-F. Zhang, S. Du, S.T. Pantelides, and H.-J. Gao, “Quantum nutcracker for near-room-temperature hydrogen dissociation”, Science Bulletin 64, 4, November 15, 2018.
[30] E. Shi, T. Feng, J.-H. Bahk, Y. Pan, W. Zheng, Z. Li, G. J. Snydr, S. T. Pantelides, “Experimental and theoretical study on well- tunable nano-sized metal oxide doping towards high-performance thermoelectrics”, Energ. Environ. Sci. 2, 43, November 14, 2018.
[31] J. Zhu, T. Feng, S. Mills, P.-P. Wang, X. W. Wu, L. Zhang, S. T. Pantelides, X. Du, and X. Wang, “Record-low and anisotropic thermal conductivity of quasi-1D bulk ZrTe5 single crystal”, ACS Appl. Mater. Interfaces 10, 40740, November 28, 2018.
[32] Y. Cao, Y.-F. Zhang, L. Huang, J. Qi, Q. Zhang, X. Lin, Z. Cheng, Y.-Y. Zhang, X. Feng, S. Du, S. T. Pantelides, H.-J. Gao, “Tuning the morphology of chevron-type graphene nanoribbons by choice of annealing temperature”, Nano Res. 11, 6190, December 1, 2018.
[33] G. Li, L. Zhang, W. Xu, S. Song, Y. Zhang, H. Zhou, Y. Wang, L. Bao, Y.-Y. Zhang, S. X. Du, S. T. Pantelides, H.-J. Gao, “Stable silicone in graphene/silicone Van-der-waals heterostructure”, Adv. Mater. 30, 1804650, December 6, 2018.
[34] P. Wang, C. J. Perini, A. O’Hara, H. Gong, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, and E. M. Vogel, “Total-ionizing-dose effects and proton-induced displacement damage on MoS2-interlayer-MoS2 tunnel junctions”, IEEE Trans. Nucl. Sci., online, December 7, 2018.
[35] S. Z. Yang, Y. Gong, P. Manchanda, Y.-Y. Zhang, G. Ye, S. T. Pantelides, P. M. Ajayan, M. F. Chisholm, W. Zhou, “Rhenium-doped and stabilized MoS2 atomic layers with basal-plane catalytic activity”, Adv. Mater. 30, 1803477, December 20, 2018.
[36] E. A. Hernandez-Pagan, A. O’Hara, S. L. Arrowood, J. R. McBride, J. Rhodes, S. T. Pantelides, and J. E. Macdonald, “Transformation of the anion sublattice in the cation exchange synthesis of Au2S from Cu2S”, Chem. Mater. 30, 88438851, December 26, 2018.
2017
[1] E. X. Zhang, D. M. Fleetwood, J. A. Hachtel, C. Liang, R. A. Reed,
M. L. Alles, R. D. Schrimpf, D. Linten, J. Mitard, M. F. Chisholm, and S. T. Pantelides, “Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si”, IEEE Trans. Nucl. Sci. 64 (1), 226-232, January 2017.
[2] R. Jiang, E. X. Zhang, M. W. McCurdy, J. Chen, X. Shen, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides, “Worst-case bias for proton and 10-keV x-ray irradiation of AlGaN/GaN HEMTs”, IEEE Trans. Nucl. Sci. 64 (1), 218-225, January 2017.
[3] J. Zhou, F. Liu, J. Lin, X. Huang, J. Xia, B. Zhang, Q. Zeng, H. Wang, C. Zhu, L. Niu, X. Wang, W. Fu, P. Yu, T. R. Chang, C. H. Hsu, D. Wu, H. T. Jeng, Y. Huang, H. Lin, Z. Shen, C. Yang, L. Lu, K. Suenaga, W. Zhou, S. T. Pantelides, G. Liu, Z. Liu, “Large-area and high-quality 2D transition metal telluride”, Adv. Mater. 29 (3), January 1, 2017.
[4] H. Aldridge, A. G. Lind, C. C. Bomberger, Y. Puzyrev, J. M. Zide, S. T. Pantelides, M. E. Law, “N-type doping strategies for InGaAs”, Mat. Sci. in Semicon. Proc. 62, 171-179, January 4, 2017.
[5] B. R. Tuttle, N. J. Held, L. H. Lam, Y.-Y. Zhang, S. T. Pantelides, “Properties of hydrogenated nanoporous SiC: an ab initio study”, J. Nanomater. 2017, January 10,2017.
[6] A. D. La Croix, A. O’Hara, K. R. Reid, N. J. Orfield, S. T. Pantelides, S. J. Rosenthal, J. E. Macdonald, “Design of a hole trapping ligand”, Nano Lett. 17 (2), 909-914, January 19, 2017.
[7] L. Huang, Y.-F. Zhang, Y.-Y. Zhang, W. Xu, Y. Que, E. Li, J. B. Pan, Y. L. Wang, Y. Liu, S.-X. Du, S. T. Pantelides, H.-J. Gao, “Sequence of silicon monolayer structures grown on a Ru surface: from a herringbone structure to silicene”, Nano Lett. 17 (2), 1161-1166, January 23, 2017.
[8] B. R. Tuttle, S. T. Pantelides, “The properties of isolated dangling bonds on hydrogenated 2H-SiC surfaces”, Surf. Sci. 656, 109-114, February 28, 2017.
[9] S. Xu, X. Shen, K. A. Hallman, R. F. Haglund Jr., S. T. Pantelides, “Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases”, Phys. Rev. B 95 (12), 125105, March 6, 2017.
[10] G. Wang, L. Bao, R. Ma, T. Pei, Y.-Y. Zhang, L. Wu, Z. Zhou, H. Yang, J. Li, C. Gu, S. Du, S. T. Pantelides, H.-J. Gao, “From bidirectional rectifier to polarity-controllable transistor in black phosphorus by dual gate modulation”, 2D Mater. 4 (2), 025056, March 24, 2017.
[11] A. O’Hara, R. E. Kahn, Y.-Y. Zhang, S. T. Pantelides, “Defect-mediated leakage in lithium intercalated bilayer grapheme”, AIP Adv. 7 (4), 045205, April 2017.
[12] B. Tuttle, S. Alhassan, S.T. Pantelides, “Computational predictions for single change chalcogenide-based one-dimensional materials”, Nanomaterials 7 (5), 115, May 17, 2017.
[13] J. H. Jang, Y. M. Kim, Q. He, R. Mishra, L. Qiao, M. D. Biegalski, A. R. Lupini, S. T. Pantelides, S. J. Pennycook, S. V. Kalinin, A. Y. Borisevich, “In-situ observation of oxygen vacany dynamics and ordering in the epitaxial LaCoO3 system”, ACS Nano 11 (7), June 11, 2017.
[14] X. Lin, J.C. Lu, Y. Shao, Y.-Y. Zhang, X. Wu, J. B. Pan, L. Gao, S. Y. Zhu, K. Qian, Y.-F. Zhang, D.-L. Bao, L. F. Li, Y. Q. Wang, Z. L. Liu, J. T. Sun, T. Lei, C. Liu, J. O. Wang, K. Ibrahim, D. N. Leonard, W. Zhou, H. M. Guo, Y.-L. Wang, S.-X. Du, S. T. Pantelides, H.-J. Gao, “Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters”, Nat. Mater. 16, 717-721, June 12, 2017.
[15] H. Guo, Z. Wang, S. Dong, S. Ghosh, M. Saghayezhian, L. Chen, Y. Weng, A. Herklotz, T. Z. Ward, R. Jin, S. T. Pantelides, Y. Zhu, J. Zhang, E. W. Plummer, “Interface-induced multiferroism by design in complex oxide superlattices”, P. Natl. Acad. Sci. USA 114 (26), E5062-E5062, June 27, 2017.
[16] D. Fu, X. Zhao, Y.-Y. Zhang, L. Li, H. Xu, A. R. Jang, S. I. Yoon, P. Song, S. M. Poh, T. Ren, Z. Ding, W. Fu, T. J. Shin, H. S. Shin, S. T. Pantelides, W. Zhou, K. P. Loh, “Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride”, J. Am. Chem. Soc. 139 (27), 9392-9400, July 3, 2017.
[17] J. Lin, S. Zuluaga, P. Yu, Z. Liu, S. T. Pantelides, K. Suenaga, “Novel Pd2Se3 two-dimensional phase driven by interlayer fusion in layered PdSe2”, Phys. Rev. Lett. 119 (1), 016101, July 6, 2017.
[18] H. Chen, T. Pope, Z. Wu, D. Wang, L. Tao, D.-L. Bao, W. Xiao, J.-L. Zhang, Y.-Y. Zhang, S.-X. Du, S. Gao, S. T. Pantelides, W. A. Hofer, H.-J. Gao, “Evidence for ultra-low-energy vibrations in large organic molecules”, Nano Lett. 17 (8), 4929, August 9, 2017.
[19] H. D. Yoo, Y. Liang, H. Dong, J. Lin, H. Wang, Y. Liu, L. Ma, T. Wu, Y. Li, Q. Ru, Y. Jing, Q. An, W. Zhou, J. Guo, J. Lu, S. T. Pantelides, X. Qian, Y. Yao, “Fast kinetics of magnesium monochloride cations in interlayer-expanded titanium disulfide for magnesium rechargeable batters”, Nat. Commun. 8 (1), 339, August 24, 2017.
[20] S. Zuluaga, P. Manchanda, Y.-Y. Zhang, S. T. Pantelides, “Design of optimally stable molecular coatings for Fe-based nanoparticles in aqueous environments”, ACS Omega 2 (8), 4480, August 31, 2017.
[21] Y.-N. Wu, X.-G. Zhang, S. T. Pantelides, “Fundamental resolution of difficulties in the theory of charged point defects in semiconductors”, Phys. Rev. Lett. 119 (10), 105501, September 7, 2017.
[22] R. Ma, Q. Huan, L. Wu, J. Yan, W. Guo, Y.-Y. Zhang, S. Wang, L. Bao, Y. Liu, S.-X. Du, S. T. Pantelides, H.-J. Gao, “Direct four-probe measurement of grain-boundary resistivity and mobility in millimeter-sized graphene”, Nano Lett. 17 (9), 5291-5296, September 13, 2017.
[23] Y.-F. Zhang, Y. Zhang, G. Li, J. Lu, Y. Que, H. Chen, R. Berger, X. Feng, K. Mullen, X. Lin, Y.-Y. Zhang, S. Du, S. T. Pantelides, H.-J. Gao, “Sulfur-doped graphene nanoribbons with a sequence of distinct band gaps”, Nano Res. 10 (10), 3377-3384, October 1, 2017.
[24] P. Wang, C. Perini, A. O’Hara, B.R. Tuttle, E.X. Zhang, H. Gong, C. Liang, R. Jiang, W. Liao, D.M. Fleetwood, R.D. Schrimpf, E.M. Vogel, S.T. Pantelides, “Radiation-induced charge trapping and low-frequency noise of graphene transistors”, IEEE T. Nucl. Sci. PP (99), October 10, 2017.
[25] Y.S. Puzyrev, X. Shen, C.X. Zhang, J. Hachtel, K. Ni, B.K. Choi, E.X. Zhang, O. Ovchinnikov, R.D. Schrimpf, D.M. Fleetwood, S.T. Pantelides, “Memristive devices from ZnO nanowire bundles and meshes”, Appl. Phys. Lett. 111 (15), 153504, October 13, 2017.
[26] S. Ghosh, A.Y. Borisevich, S.T. Pantelides, “Engineering a ferroelectric superlattice from metallic components”, Phys. Rev. Lett. 119 (17), 177603, October 25, 2017.
[27] S. May, S.T. Pantelides, “Structural ‘delta-doping’ of octahedral rotations to engineer local magnetization in isovalent manganite superlattices”, Phys. Rev. Lett. 119 (19), 197204, November 8, 2017.
[27] S. Prabhakar, J. Liu, Y.-Y. Zhang, S.T. Pantelides, “Atomic-scale theory of wettability alteration of calcite oil wells by additives in sea water”, Soc. Petrol. Eng. J., November 13, 2017.
[28] J.A. Santana, R. Mishra, J.T. Krogel, A.Y. Borisevich, P.R.C. Kent, S.T. Pantelides, F.A. Reboredo, “Quantum many-body effects in defective transition metal oxide superlattices”, J. Chem. Theory Comput. 13 (11), 5604-5609, November 14, 2017.
[29] J. Song, B.M. Hudak, H.R. Sims, Y. Sharma, T.Z. Ward, S.T. Pantelides, A.R. Lupini, P.C. Snijders, “Homo-endotaxial one-dimensional Si nanowires”, Nanoscale 10 (1), 260-267, November 29, 2017.
[30] X. Zhao, D. Fu, Z. Ding, Y.-Y. Zhang, D. Wan, S.J. Tan, Z. Chen, K. Leng, J. Dan, W. Fu, P. Song, Y. Du, T. Venkatesan, S.T. Pantelides, S.J. Pennycook, W. Zhou, K.P. Loh, “Mo-terminated edge reconstructions in nanoporous molybdenum disulfide film”, Nano Lett. 18 (1), 482-490, published online December 18, 2017.
2016
[1] Y. Puzyrev, X. Shen and S. T. Pantelides, “Prediction of giant thermoelectric efficiency in crystals with interlaced nanostructure”, Nano Lett. 16, 212-125, January 2016.
[2] T. Kishida, M. D. Kapetanakis, J. Yan, B. C. Sales, S. T. Pantelides, S. J. Pennycook, and M. F. Chisholm, ”Magnetic ordering in Sr3YCo4O10+x”, Sci. Rep. 6, 19762, January 28, 2016.
[3] G. L. Ye, Y. Gong, J. Lin, B. Li, Y. M. He, S. T. Pantelides, W. Zhou, R. Vajtai, and P. M. Ajayan, “Defects engineered monolayer MoS2 for improved hydrogen evolution reaction”, Nano Lett. 16, 1097-1103, February 2016.
[4] J. Lin, Y. Y. Zhang, W. Zhou, and S. T. Pantelides, “Structural flexibility and alloying in ultrathin transition-metal chalcogenide nanowires”, ACS Nano, 10, 2782-2790, February 2016.
[5] T. Pei, L. Bao, G. Wang, R. Ma, H. Yang, J. Li, C. Gu, S. T. Pantelides, S. Du, and H. Gao, “Few-layer SnSe2 transistors with high on/off ratios”, App. Phys. Lett. 108, 053506, February 1, 2016.
[6] A. Leach, X. Shen, A. Faust, M. C. Cleveland, A. D. La Croix, U. Banin, S. T. Pantelides, and J. E. Macdonald, “Defect luminescence from wurtzite CuInS2 nanocrystals: Combined experimental and theoretical analysis”, J.Phys. Chem. C. 120, 5207-5212, March 10, 2016.
[7] J. Hachtel, S. Yu, A. R. Lupini, S. T. Pantelides, M. Gich, A. Laromaine, and A. Roig “Gold nanotriangles decorated with superparamagnetic iron oxide nanoparticles: a compositional and microstructural study”, Faraday Discussions, 191, 215-227, March 11, 2016.
[8] J. Gazquez, R. Guzman, R. Mishra, E. Bartolome, J. Salafranca, C. Magen, M. Varela, M. Coll, A. Palau, S. M. Valvidares, P. Gargiana, E. Pellegrin, J. Herrero-Martin, S. J. Pennycook, S. T. Pantelides, T. Puig, and X. Obradors, “Emerging diluted ferromagnetism in high-Tc superconductors driven by point defect clusters”, Adv. Sci. 3, March 15, 2016.
[9] Y. Gong, G. Ye, S. Lei, G. Shi, Y. He, J. Lin, X. Zhang, R. Vajtai, S. T. Pantelides, W. Zhou, B. Li, and P Ajayan, “Synthesis of millimeter-scale transition metal dichalcogenides single crystals”, Adv. Funct. Mat. 26, 2009-2015, March 22, 2016.
[10] S. Mukherjee, Y. Puzyrev, J. Chen, D. Fleetwood, R. Schrimpf, and S. T. Pantelides, “Hot-carrier degradation in GaN HEMTs due to substitutional iron and its complexes”, IEEE Trans. Elec. Dev. 63, 1486-1494, April 2016.
[11] X. Li, M. Lin, J. Lin, B. Huang, A. A. Puretzky, C. Ma, K. Wang, W. Zhou, S. T. Pantelides, M. Chi, I. Kravchenko, J. Fowlkes, C. Rouleau, D. Geohegan, and K. Xiao, “Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy”, Sci. Adv. 2, e1501882, April 15, 2016.
[12] J. Hachtel, C. Marvinney, A. Mouti, D. Mayo, R. Mu, S. J. Pennycook, A. R. Lupini, M. F. Chisholm, R. F. Haglund, and S. T. Pantelides, “Probing plasmons in three dimensions by combining complementary spectroscopies in a scanning transmission electron microscope”, Nanotech. 27, 155202, April 15, 2016.
[13] H. He, J. Lin, W. Fu, X. Wang, H. Wang, Q. Zeng, Q. Gu, Y.i Li, C. Yan, B. K. Tay, C. Xue, X. Hu, S. T. Pantelides, W. Zhou, and Z. Liu, “MoS2/TiO2 edge-on heterostructure for efficient photocatalytic hydrogen evolution”, Adv. Energy Mater. 2016, 1600464, May 6, 2016.
[14] J. Chen, Y. Puzyrev, E. Zhang, D. Fleetwood, R. Schrimpf, A. Arehart, S. Ringel, S. Kaun, E. Kyle, J. Speck, P. Saunier, C. Lee, and S. T. Pantelides, “High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs”, IEEE Trans. Device Mater. Rel. 16, 282-289, June 15, 2016
[15] R. Jiang, X. Shen, J. Chen, G. X. Duan, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides, “Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett. 109, 023511, July 13, 2016.
[16] R. Mishra, Y. Kim, Q. He, X. Huang, S.K. Kim, M. Susner, A. Bhattacharya, D. D. Fong, S. T. Pantelides, and A. Borisevich, “Towards spin-polarized two-dimensional electron gas at surface of an antiferromagnetic insulating oxide”, Phys. Rev. B. 94, 045123, July 18, 2016.
[17] Q. He, S. Ghosh, E. J. Moon, S. J. May, A. R. Lupini, S. T. Pantelides, and Albina Y. Borisevich, “Tracking BO6Coupling in Perovskite Superlattices to Engineer Magnetic Interface Behavior”, Microsc. Microanal., 22, 904-905, July 25, 2016.
[18] H. Aldridge, A. Lind, C. Bomberger, Y. Puzyrev, C. Hatem, R. G. William, J. M. O. Zide, S. T. Pantelides, M. Law, and K. Jones, “Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As”, J. Electr. Mat. 45, 4282-4287, August 2016.
[19] F. Liu, L. You, K. L. Seyler, X. Li, P. Yu, J. Lin, X. Wang, J. Zhou, H. Wang, H. He, S. T. Pantelides, W. Zhou, P. Sharma, X. Xu, P. M. Ajayan, J. Wang, and Z. Liu,”Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes”, Nature Comm. 7, 12357, August 11, 2016.
[20] X. Shen, T. J. Pennycook, D. Hernandez-Martin, A. Pérez, Y. Puzyrev, Y. Liu, S. G. E. te Velthuis, J. W. Freeland, P. Shafer, C. Zhu, M. Varela, C. Leon, Z. Sefrioui, J. Santamaria, and S. T. Pantelides, “High on/off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity”, Adv. Mat. Interf. 3, 1600086, August 19, 2016.
[21] X. Shen, Y. S. Puzyrev, C. Combs, and S. T. Pantelides, “Variability of structural and electronic properties of bulk and monolayer Si2Te3”, Appl. Phys. Lett. 109, 113104, September 13, 2016.
[22] M. J. Turo, X. Shen, N. K. Brandon, S. Castillo, A. M. Fall, S. T Pantelides and J. E. Macdonald, “Dual-mode crystal-bound and X-type passivation of quantum dots”, Chem. Comm. 52, 12214-12217, September 16, 2016.
[23] W. Zheng, J. Lin, W. Feng, K. Xiao, Y. Qiu, S. T. Pantelides, W. Zhou, X. S. Chen, G. Liu, W. Cao, and P. A. Hu, “Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor”, Adv.Funct. Mat. 26, 6371-6379, September 19, 2016.
[24] Y. Wu, X. Zhang, and S. T. Pantelides, “First-principles calculations reveal controlling principles for carrier mobilities in semiconductors”, Semicond. Sci. Technol. 31, 115016 October 11, 2016.
[25] H. Aldridge Jr., A. G. Linda , C. C. Bomberger , Y. Puzyrev , J. M.O. Zide , S. T. Pantelides, M. E. Law , Kevin S. Jones, “N-type doping strategies for InGaAs”, Materials Science in Semconductor Processing, 57, 39-47, October 19, 2016.
[26] K. Yin, Y-Y. Zhang, Y. Zhou, L. Sun, M. F. Chisholm, S. T Pantelides, and W. Zhou, “Unsupported single-atom-thick copper oxide monolayers”, 2D Mater., 4, 011001, October 20, 2016.
[27] L. Chen, Y. Y. Zhang, T. J. Pennycook, Y. Wu, A. R. Lupini, N. Paudel, S. T. Pantelides, Y. Yan, and S. J. Pennycook, “Column-by-column observation of dislocation motion in CdTe: Dynamic scanning transmission electron microscopy”, Appl. Phys. Lett. 109, 143107, October 24, 2016.
[28] G. Wang, L. Bao, T. Pei, R. Ma, Y. Y. Zhang, L. Sun, Guangyu Zhang, H. Yang, J. Li, S. Gu, S. Du. S. T. Pantelides, R. D. Schrimpf and H.- J. Gao, “Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices”, Nano Lett. 16, 6870-6878, October 27, 2016.
[29] M. D. Kapetanakis, M. P. Oxley, W. Zhou, S. J. Pennycook, J.-C. Idrobo, and S. T. Pantelides, “Signatures of distinct impurity configurations in atomic-resolution valence electron-energy-loss spectroscopy: Application to graphene” Phys. Rev. B. 94, 155449, October 31, 2016.
[30] G. X. Duan, J. A. Hachtel, E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, J. Mitard, D. Linten, L. Witters, N. Collaert, A. Mocuta, A. V.-Y. Thean, M. F. Chisholm, and S. T. Pantelides, “Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe pMOSFETs”, IEEE Trans. Device Mater. Rel, 16, 541-548, December 2016.
2015
[1] W. Zhou, K. Yin, C. Wang, Y. Zhang, T. Xu, A. Borishevich, L. Sun, J. C. Idrobo, M. Chisholm, S. T. Pantelides, R. Klie, and A. Lupini, “The observation of square ice in graphene questioned”, Nature, (in press December 2015).
[2] R. Nicholl, H. Conley, N. Lavrik, I. Vlassiouk, Y. Puzyrev, V. Parsi Sreenivas, S. T. Pantelides, and Kirill I. Bolotin, “The effect of intrinsic crumpling on the mechanics of free-standing graphene”, Nature Comm., 6, 8789, (2015).
[3] Y. Wang, L. Li, W. Yao, S. Song, J. T. Sun, J. Pan, X. Ren, C. Li, E. Okunishi, Y.-Q. Wang, E. Wang, Y. Shao, Y. Y. Zhang, H.-T. Yang, E. F. Schwier, H. Iwasawa, K. Shimada, M. Taniguchi, Z. Cheng, S. Zhou, S. Du, S. J. Pennycook, S. T. Pantelides, and H.-J. Gao, “Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt”, Nano Lett., 15, 4013−4018, (2015).
[4] X Shen, K Yin, YS Puzyrev, Y Liu, L Sun, RW Li, ST Pantelides, “2D nanovaristors at grain boundaries account for memristive switching in polycrystalline BiFeO3, Adv. Electron. Mater. 1 (5) 2015.
[5] L. Pan, Y. Que, H. Chen, D. Wang, J. Li, C. Shen, W. Xiao, S. Du, H. Gao, and S. T. Pantelides, “Room-temperature, low-barrier boron doping of graphene”, Nano Lett., 15, 6464-6468, (2015).
[6] X. Lu, M. Utama, J. Lin, X. Lou, Y. Zhao, J. Zhang, S. T. Pantelides, W. Zhou, S. Quek, and W. Xiong, “Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by raman spectroscopy”, Adv. Mat., 27, 4502-4508, (2015).
[7] J. Lin, S. T. Pantelides, W. Zhou “Vacancy-induced formation and growth of inversion domains in transition-metal dichalcogenide monolayer”, ACS Nano, 9, 5189–5197 (2015).
[8] Y. S. Puzyrev, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors”, Applied Physics Lett., 106, 053505 (2015).
[9] X. Shen, S. Dhar, and S. T. Pantelides, “Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices”, Appl. Physics Lett, 106, 143504, (2015).
[10] Y. Zhang, R. Mishra, T. J. Pennycook, A. Y. Borisevich, S. J. Pennycook, and S. T. Pantelides, “Oxygen disorder, a way to accommodate large epitaxial
strains in oxides”, Adv. Mat. Interfaces, published online Sept. 22, 2015.
[11] S. J. Pennycook, W. Zhou, and S. T. Pantelides, “Watching atoms work: Nanocluster structure and dynamics”, ACS Nano, 10, 9437-9440 (2015).
[12] J. Hachtel, R. Sachan, R. Mishra, and S. T. Pantelides, “Quantitative first-principles theory of interface absorption in multilayer heterostructures”, Appl. Phys. Lett., 107, 091908, (2015).
[11] Q. Qiao, Y. Zhang, R. Contreras-Guerrero, R. Droopad, S. T. Pantelides, S. J. Pennycook, S. Ogut, and R. F. Klie, “Direct observation of oxygen vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs”, App. Physics Lett., 107, 201604 (2015).
[12] Y. Zhang, R. Mishra, T. J. Pennycook, A. Y. Borisevich, S. J. Pennycook, and S. T. Pantelides, “Oxygen disordr, a way to accommodate large epitaxial strains in oxides”, Adv. Mater. Interf., published online Sept. 23, 2015.
[13] X. Shen, Y. Puzyrev, D. Fleetwood, R. Schrimpf, and S. T. Pantelides, “Quantum mechanical modeling of radiation-induced defect dynamics in electronic devices”, IEEE Trans. on Nuc. Sci., 5, 2169-2180, (2015).
[14] M. Kapetanakis, W. Zhou, M. Oxley, J. Lee, M. Prange, S. Pennycook, J.C. Idrobo and S. T. Pantelides, “Low-loss electron energy loss spectroscopy: An atomic-resolution complement to optical spectroscopies and application to graphene”, Phys. Rev. B, 92, 125147, (2015).
[15] J.A. Hachtel, C. Marvinney, A. Mouti, D. Mayo, R. Mu, S. J. Pennycook, A. R. Lupini, M. F. Chisholm, R. F. Haglund, and S. T. Pantelides, “Probing plasmons in three dimensions by combining complementary spectroscopies in a scanning transmission electron microscope, under review by Adv. Opt. Mater.
[16] X. Shen, T. J. Pennycook, D. Hernandez-Martin, A. Perez, M. Varela, Y. S. Puzyrev, C. Leon, Z. Sefrioui, J. Santamaria, and S. T. Pantelides, “High on/off ratio memristive switching of manganite-cuprate bilayer by interfacial magntoelectricity”, under review by Adv. Mater. Interf.
[15] S. Yu, J. Hachtel, M. Chisholm, S. T. Pantelides, L. Laromaine, and A. Roig, “Magnetic gold nanotriangles by microwave-assisted polyol synthesis”, Nanoscale, 7, 14039-14046, (2015).
[16] G. Duan, J. Hatchel, X. Shen, E.X. Zhang, C. X. Zhang, B. Tuttle, D. Fleetwood, R. Schrimpf, R. Reed, J. Franco, D. Linten, J. Mitard, L. Witters, N. Collaert, M. Chisholm, and S. T. Pantelides, “Activation energies for oxide- and interface-trap charge generation due to negative-bias temperature stress of Si-capped SiGe-pMOSFETs”, IEEE Trans. on Dev. and Mat. Rel., 15, 352-358, (2015).
[18] G. Barmparis, Y. Puzyrev, X.-G. Zhang, and S. T. Pantelides, “Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections”, PRB, 92, 214111, (2015).
[19] J. Pan, S. Du, Y. Zhang, L. Pan, Y. Zhang, H.-J. Gao, and S. T. Pantelides, “Ferromagnetism and perfect spin filtering in transition-metal-doped in graphyne nanoribbons”, PRB, 92, 205429, (2015).
[20] B. Tuttle, S. Alhassan, and S. T. Pantelides, “Large excitonic effects in group-IV sulfide monolayers”, PRB, 92, 235405, (2015).
[21] C. Leon, M. Frechero, M. Rocci, G. Sanchez-Santolino, A. Kumar, J. Salafranca, R. Schmidt, M. Diaz-Guillen, O. Dura, A. Rivera-Calzada, R. Mishra, S. Jesse, S. Kalinin, M. Varela, S. Pennycook, J.Santamaria, and S. T. Pantelides, “Paving the way to nanoionics: atomic origin of barriers for ionic transport through interfaces”, Scientific Reports, 5, 17229, (2015).
2014
[1] J. Lee, Z. Q. Yang, W. Zhou, S. J. Pennycook, S. T. Pantelides, M. F. Chisholm, “Stabilization of graphene nanopore”, PNAS, 111, 7522-7526 (2014).
[2] Y.-M. Kim, A. Morozovska, E. Eliseev, M. P. Oxley, R. Mishra, S. M Selbach, T. Grande, S. T. Pantelides, S. V. Kalinin, A. Y. Borisevich, “Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1-xMnO3 interface”, Nature Mat., 13, 1019-1025 (2014).
[3] J. H. Lin, O. Cretu, W. Zhou, K. Suenaga, D. Prasai, K. I. Bolotin, N. T. Cuong, M. Otani, S. Okada, A. R. Lupini, J. C. Idrobo, D. Caudel, A.Burger, N. J. Ghimire, J. Q. Yan, D. G. Mandrus, S. J. Pennycook, S. T. Pantelides, “Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers”, Nature Nanotech., 9, 436-442, (2014).
[4] N. Biškup, J. Salafranca, V. Mehta, M. P. Oxley , Y. Suzuki, S. J. Pennycook, S. T. Pantelides and M. Varela, “Insulating ferromagnetic LaCoO3-δ films: a phase induced by ordering of oxygen vacancies”, Phys. Rev. Lett. 112, 087202 (2014).
[5] R. Ishikawa, R. Mishra, A. R. Lupini, S. D. Findlay, T. Taniguchi, S. T. Pantelides, S. J. Pennycook, “Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch” Phys. Rev. Lett., 113, 155501 (2014).
[6] Y. J. Gong, Z. Liu, A. R. Lupini, G. Shi, J. H. Lin, S. Najmaei, Z. Lin, A. L. Elias, A. Berkdemir, G. You, H. Terrones, M. Terrones, R. Vajtai, S. T. Pantelides, S. J. Pennycook, J. Lou, W. Zhou, P. M. Ajayan, “Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide”, Nano Lett., 14, 442-449 (2014).
[7] X. Lu, M. I. B. Utama, J. H. Lin, X. Gong, J. Zhang, Y. Y. Zhao, S. T. Pantelides, J. X. Wang, Z. L. Dong, Z. Liu, W. Zhou, Q. H. Xiong, “Large-area synthesis of monolayer and few-layer MoSe2 Films on SiO2 substrates”, Nano Lett., 14, 2419-2425 (2014).
[8] R. Mishra, Y. M. Kim, J. Salafranca, S. K. Kim, S. H. Chang, A. Bhattacharya, D. D. Fong, S. J. Pennycook, S. T. Pantelides, A. Y. Borisevich, “Oxygen-vacancy-induced polar behavior in (LaFeO3)(2)(SrFeO3) superlattices”, Nano Lett., 14, 2694-2701 (2014).
[9] F. J. Nelson, J. C. Idrobo, J. D. Fite, Z. L. Miskovic, S. J. Pennycook, S. T. Pantelides, J. U. Lee, A. C. Diebold, “Electronic excitations in graphene in the 1-50 eV range: The pi and pi plus sigma peaks are not plasmons”, Nano Lett., 14, 3827-3831, (2014).
[10] J. D. Ren, H. M. Guo, J. B. Pan, Y. Y. Zhang, X. Wu, H. G. Luo, S. X. Du, S. T. Pantelides, H. J. Gao, “Kondo effect of cobalt adatoms on a graphene monolayer controlled by substrate-induced ripples”, Nano Lett. 14, 4011-4015,(2014).
[11] K. Appavoo, B. Wang, N. F. Brady, M. Seo, J. Nag, R. P. Prasankumar, D. J. Hilton, S. T. Pantelides, R. F. Haglund, Jr., “Ultrafast phase transition via catastrophic phonon collapse driven by plasmonic hot-electron injection”, Nano. Lett., 14, 1127-1133 (2014).
[12] Y. Puzyrev, S. Mukherjee, J. Chen, T. Roy, M. Silvestri, R. D. Schrimpf, D. M. Fleetwood, J. Singh, J. M. Hinckley, A. Paccagnella, S. T. Pantelides, “Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs”, IEEE Trans. Electron Dev., 61, 1316-1320 (2014).
[13] K. H. Warnick, B. Wang, S. T. Pantelides, “Hydrogen dynamics and metallic phase stabilization in VO2”, Appl. Phys. Lett., 104, 101913 (2014).
[14] L. Tsetseris, B. Wang, S. T. Pantelides, “Substitutional doping of graphene: The role of carbon divacancies”, Phys. Rev. B., 89, 035411 (2014).
[15] Y. Xu, X. Zhu, H. D. Lee, C. Xu, S. M. Shubeita, A. C. Ahyi, Y. Sharma, J. R. Williams, W. Lu, S. Ceesay, B. R. Tuttle, A. Wan, S. T. Pantelides, T. Gustafsson, E. L. Garfunkel, L. C. Feldman, “Atomic state and characterization of nitrogen at the SiC/SiO2 interface” J. Appl. Phys., 115, 033502 (2014).
[16] L. Tsetseris and S. T. Pantelides, “Graphene – an impermeable or selectively permeable membrane to atomic species?”, Carbon, 67, 58-63 (2014).
[17] A. R. Klots, A.K.M. Newaz, B. Wang, D. Prasai, H. Krzyzanowska, J.H. Lin, D. Caudel, N. J. Ghimire, J. Yan, B. L. Ivanov, K. A. Velizhanin, A. Burger, D. G. Mandrus, N. H. Tolk, S. T. Pantelides, K. I. Bolotin, “Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy”, Scientific Reports, 4, 6608, (2014).
[18] Z. Q. Yang, L. C. Yin, J. Lee, W. C. Ren, H. M. Cheng, H.Q. Ye, S. T. Pantelides, S. J. Pennycook, M. F. Chisholm, “Direct observation of atomic dynamics and silicon doping at a topological defect in grapheme”, Angewandte Chemie-International Edition 53, 8908-8912, (2014).
[19] M. P. Oxley, M. D. Kapetanakis, M. P. Prange, M. Varela, S. J. Pennycook, S. T. Pantelides, “Simulation of probe position-dependent electron energy-loss fine structure” Microscopy and Microanalysis, 20, 784-797, (2014).
[20] D. M. Fleetwood, E. X. Zhang, X. Shen, C. X. Zhang, R. D. Schrimpf, S. T. Pantelides, “Bias-temperature instabilities in silicon carbide MOS devices”, edited by T. Grasser, (Springer, Vienna, 2014).
[21] G. X. Duan, C. X. Zhang, E. X. Zhang, J. Hachtel, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, M. L. Alles, S. T. Pantelides, G. Bersuker, C. D. Young, “Bias dependence of total ionizing dose effects inSiGe- MOS FinFETs”, IEEE Trans. Nucl. Sci., 61, 2834-2838, (2014).
[22] C. X. Zhang, A. K. M. Newaz, B. Wang, E. X. Zhang, G. X. Duan, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, K. I. Bolotin, S. T. Pantelides, “Electrical stress and total ionizing dose effects on MoS transistors”, IEEE Trans. Nucl. Sci., 61, 2862-2867, (2014).
[23] C. X. Zhang, B. Wang, G. X. Duan, E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, A. P. Rooney, E. Khestanova, G. Auton, R. V. Gorbachev, S. J. Haigh, S. T. Pantelides, “Total Ionizing Dose Effects on h-BN Encapsulated Graphene Devices”, IEEE Trans. Nucl. Sci., 61, 2868-2873, (2014).