Recent Publications

Google Scholar Citation Page

2022

[1] O’Hara, N. Balke, S. T. Pantelides, “Unique features of polarization in Ferroelectric ionic control”, Adv. Elect. Mater. 8, 2100810 (2022).

[2] Ali, Z. Wang, A. O’Hara, M. Saghayezhian, D. Shin, Y. Zhu, S. T. Pantelides, J. Zhang, “Origin of insulating and nonferromagnetic SrRuO3 monolayers”, Phys. Rev. B 105, 054429 (2022).

[3] M. Neumayer, M. Si, J. Li, P.-Y. Liao, L. Tao, A. O’Hara S. T. Pantelides, P. Ye, P. Maksymovych, N. Balke, “Ionic control over ferroelectricity in 2D layered van der Waals capacitors”, ACS Nano 14, 3018 (2022).

[4] M. Neumayer, Z. Zhao, A. O’Hara, M. A. McGuire, M. A. Susner, S. T. Pantelides, P. Maksymovych, N. Balke, “Nanoscale Control of Polar Surface Phases in Layered van der Waals CulnP2S6”, ACS Nano 16, 2452 (2022).

[5] M. Fleetwood, E. X. Zhang, R. D. Schrimf, S. T. Pantelides, “Radiation effects in AIGaN/GaN HEMTs”, IEEE Trans.Nucl. Sci. 69, 1105 (2022).

[6] M. Neumayer, M. Susner, M. McGuire, S. T. Pantelides, S. Kalnaus, P. Maksymovych, N. Balke, “Experimental investigation of ferroelectric behavior in van der Waals layered materials under in-plane strain”, in press, IEEE Trans. Ultrason. Ferroelectr. Freq. Control.

[7] R. Hoglund, D.-L. Bao, A. O’Hara, S. Makarem, Z. T. Piontkowski, , J. R. Matson, A. K. Yadav, R. C. Haisimaier, R. Engel-Herbert, J. F. Ihlefeld, J. Ravichandran, R. Ramesh, J. D. Caldwell, T. E. Beechem, J. A. Tomko, J. A. Hachtel, S. T. Pantelides, P. E. Hopkins, J. M. Howe, “Nanoscale phonon spectroscopy reveals emergent interface vibrational structure of superlattices”, Nature 601, 556 (2022).

[8] D-L. Bao, A. O’Hara, S. Du, S. T. Pantelides, “Tunable, Ferroelectricity-Inducing, Spin-Spiral Magnetic Ordering in monolayer FeOCl”, Nano Lett. 22, 3598-3603 (2022).

[9] S. Thornton, B. Tuttle, E. Turner, M E. Law, S. T. Pantelides, G. T Wang, K. S. Jones, “The diffusion mechanism of Ge during oxidation of Si/SiGe nanofins”, ACS Appl. Mater. Interfaces 14, 29422-29430 (2022).

[10] Guo, T. Feng, M. Lance, K. A. Unocic, S. T. Pantelides, E. Lara-Curzio, “Evolution of the structure and chemical composition of the interface between multi-component silicate glasses and YSZ after 40,000-hours exposure in air at 800°C”, J. Eur. Ceram 42, 1576 (2022).

[11] Lu, S. Song, S. Zhang, Y. Song, Y. Cao, Z. Wang, L. Huang, H. Lu, Y.-Y. Zhang, S. T. Pantelides, S. Du, X. Lin, H.-J. Gao, “Intrinsically patterned corrals in monolayer Ag5Se2 and selective molecular co-adsorption”, Nano Res, 1 (2022).

[12] Y-T. Zhang, Y.-P. Wang, Y.-Y. Zhang, S. Du, S. T. Pantelides, “Therman transport of monolayer amorphous carbon and boron nitride”, Appl. Phys. Lett. 120, 222201 (2022).

[13] Zhou, X. Zhao, L. Wu, H. Liu, J. Chen, C. Xi, Z. Wang, E. Liu, W. Zhou, S. J. Pennycook, S. T. Pantelides, X.-G. Zhang, L. Bao, H.-J. Gao, “Dimensional crossover in self-intercalated antiferromagnetic V5S8 nanoflakes”, Phys. Rev. B 105, 235433 (2022).

[14] T. Pantelides, D. G. Walker, M. Reaz, M. V. Fischetti, R. D. Schrimpf, “The foundations of Shockley’s equation for the average electron-hole-pair creation energy in semi-conductors”, Appl. Phys. Lett. 121, 042104 (2022).

[15] Y.-T. Zhang, Y.-P. Wang, X. Zhang, Y.-Y. Zhang, S. Du, S. T. Pantelides, “The structure of amorphous two-dimensional materials: Elemental monolayer amorphous carbon versus binary monolayer amorphous boron nitride”, Submitted to Chinese Physics B.

2021

[1] Feng, Y. Wang, A. Herklotz, M. F. Chisholm, T. Z. Ward, P. C. Snijders, S. T. Pantelides, “Determination of the rutile transition-metal-oxide surface structures by a universal scanning-tunneling-microscopy contract reversal”, Phys. Rev. B. 103, 035409 (2021).

[2] M. Neumayer, M. Susner, M. McGuire, S. T. Pantelides, S. Kalnaus, P. Maksymovych, N. Balke, “Lowering of TC in van der Waals layered materials under in-plane strain”, IEEE Trans. Ultrason. Ferroelectr. Freq. Control., 68, 253 (2021).

[3] Zheng, T. Feng, J. A. Hachtel, J. Yan, R. Ishikawa, N. Shibata, Y. Ikuhara, J. C. Idrobo, B. C. Sales, S. T. Pantelides, M. Chi, “Direct visualization of anionic electrons in an electride reveals inhomogeneities”, Sci. Adv. 7, eabe6819 (2021).

[4] Shin, G. Wang, M. Han, Z. Lin, A. O’Hara, F. Chen, J. Lin, S. T. Pantelides, “Preferential hole defect formation in monolayer WSe2 by electron-beam irradiation”, Phys. Rev. Mater. 5, 044002 (2021).

[5] Reaz, A. M. Tonigan, K. Li, M. B. Smith, M. W. Rony, M. Gorchichko, A. O’Hara, J. Fang, M. L. Alles, R. A. Weller, R. A. Reed, M. V. Fischetti, S. T. Pantelides, S. L. Weeden-Wright, R. D. Schrimpf, “3-D full-band monte-carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs”, IEEE Trans. Elect. Dev. 68, 2556 (2021).

[6] Wu, A. Wang, J. Shi, J. Yan, Z. Zhou, C. Bian, J. Ma, R. Ma, H. Lui, J. Chen, Y. Huang, W. Zhou, L. Bao, M. Ouyang, S. J. Pennycook, S. T. Pantelides, H.-J. Gao, “Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices”, Nat. Nanotechnol. 16, 882 (2021).

[7] Fleetwood, A. O’Hara, T. Stellwag Mayer, M. R. Melloch, S. T. Pantelides, “Defect and impurity-complex depassivation during electron-beam irradiation of GaAs”, IEEE Trans. Nucl. Sci. 68, 1548 (2021).

[8] Kouser, S. T. Pantelides, “Quantum physical reality of polar-nonpolar oxide heterostructures”, Phys. Rev. B 104, 075411 (2021).

[9] M. Neumayer, L. Tao, A. O’Hara, M. A. Susner, M. A. McGuire, P. Maksymovych, S. T. Pantelides, N. Balke, “The concept of negative capacitance in ionically conductive van der waals ferroelectrics”, Adv. Ener. Mater. 11, 2103493 (2021).

[10] Song, K. Qian, L. Tao, Z. Wang, H. Guo, H. Chen, S. Zhang, Y.-Y. Zhang, X. Lin, S. T. Pantelides, S. Du, H. J. Gao, “Intrinsically honeycomb-patterned hydrogenated Graphene”, Small 18, 2102687 (2021).

[11] Zhu, L. Tao, X. Chen, Y. Ma, S. Ning. J. Zhou, X. Zhao, M. Bosman, Z. Liu, S. Du, S. T. Pantelides, W. Zhou, “Anisotropic point defects in rhenium diselenide monolayers”, iScience 24, 103456 (2021)

 

2020

[1] Q. Wang, Z. L. Zhao, Z. Zhang, T. Feng, R. Zhong, H. Xu, S. T. Pantelides, M. Gu, “Large-scale fabrication of sub-2nm intermetallic ordered Pt2In clusters for oxygen reduction reaction”, Adv. Sci. 7, 1901279 (2020).

[2] J. A. Brehm, S. Neumayer, M. Chyasnavichus, M. A. Susner, M. A. McGuire, S. V. Kalinin, S. Jesse, P. Ganesh, S. T. Pantelides, P. Maksymovych, N. Balke, “Tunable quadruple-well ferroelectricity in a van-der-Waals crystal”, Nat. Mater. 19, 43 (2020).

[3] T. Feng, X. Wu, X. Yang, P. Wang, L. Zhang, X. Du, X. Wang, S. T. Pantelides, “Thermal conductivity of HfTe5: A critical revisit”, Adv. Funct. Mater.  30, 1907286 (2020).

[4] C.-T. Toh, H. Zhang, J. Lin, A. S. Mayorov, Y.-P. Wang, C. Orofeo, D. B. Ferry, H. Anderson, N. Kakenov, H. Sims, K. Suenaga, S. T. Pantelides, B. Oezilmaz, “Synthesis and properties of free-standing monolayer amorphous carbon”, Nature 577, 199 (2020).

[5] R. Ma, J. Ma, J. Yan, L. Wu, W. Guo, S. Wang, Q. Huan, L. Bao, S. T. Pantelides, H.-J. Gao, “Wrinkle-induced highly conductive channels in Graphene on SiO2/Si substrate”, Nanoscale 22, 12038 (2020).

[6] X. Jin, Y.-Y. Zhang, S. T. Pantelides, S. Du, “Integration of Graphene and two-dimensional ferroelectrics: Properties and related functional devices”, Nanoscale Horizons, (2020) (online).

[7] R. Wu, D.-L. Bao, L. Yan, Y. Wang, J. Ren, Y.-F. Zhang, Q. Huan, Y.-Y. Zhang, S. X. Du, S. T. Pantelides, H.-J. Gao, “Direct Visualization of Hydrogen-transfer Intermediate States by Scanning Tunneling Microscopy”, J. Phys. Chem. Lett. 11, 1536 (2020).

[8] R. Zhang, J. Liu, Y.-Y. Zhang, S. Du, S. T. Pantelides, “Unusual anisotropic thermal expansion in multilayer SnSe leads to positive-to-negative crossover of Poisson’s ratio”, Appl. Phys. Lett. 116, 083101 (2020).

[9] L. Tao, Y.-Y. Zhang, S. Du, S. T. Pantelides, H.-J. Gao, “Tuning the catalytic activity of quantum nutcracker for hydrogen dissociation”, Surfaces 3, 40 (2020).

[10] J. Zhou, J. Lin, H. Sims, C. Jiang, C. Cong, J. A. Brehm, Z. Zhang, L, Niu, Y. Chen, Y. Zhou, Y. Wang, F. Liu, C. Zhu, T. Yu, K. Suenaga, R. Mishra, S. T. Pantelides, Z.-G. Zu, W. Gao, Z. Liu, W. Zhou, “Synthesis of co‐doped MoS2 monolayers with enhanced valley splitting”, Adv. Mater. 32, 1906536 (2020).

[11] H. Guo, R. Zhang, H. Li, X. Wang, H. Lu, K. Qian, G. Li, L. Huang, X. Lin, Y.-Y. Zhang, H. Ding, S. Du, S. T. Pantelides, H.-J. Guo, “Sizable band gap in epitaxial bilayer Graphene induced by Silicene intercalation”, Nano Lett. 20, 2674 (2020).

[12] L. Wu, J. Shi, Z. Zhou, J. Yan, A. Wang, C. Bian, J. Ma, R. Ma, H. Liu, J. Chen, Y. Huang, w. Zhou, L. Bao, M. Ouyang, S. T. Pantelides, H.-J. Gao, “InSe/hBN/Graphite heterostructure for high-performance 2D electronics and flexible electronics”, Nano Res. 13, 1 (2020).

[13] Y. Zhou, S. Kouser, A. Y. Borisevich, S. T. Pantelides, S. J. May, “Evidence for interfacial octahedral coupling as a route to enhance magnetoresistance in Perovskite Oxide superlattices”, Adv. Mater. Interfaces 7, 1901576 (2020).

[14] K. Qian, L. Gao, X. Chen, H. Li, S. Zhang, X.-L. Zhang, S. Zhu, J. Yan, D. Bao, L. Cao, J.-A. Shi, J. Lu, C. Liu, J. Wang, T. Qian, H. Ding, L. Gu, W. Zhou, Y.-Y. Zhang, X. Lin, S. Du, M. Ouyang, S. T. Pantelides, H.-J. Gao, “Air-stable monolayer Cu2Se exhibits a purely thermal structural phase transition”, Adv. Mater. 32, 1908314 (2020).

[15] T. Feng, A. O’Hara, S. T. Pantelides, “Quantum prediction of ultra-low thermal conductivity in Lithium intercalation materials”, Nano Energy 75, 104916 (2020).

[16] S. M. Neumayer, L. Tao, A. O’Hara, J. Brehm, M. Si, P.-Y. Liao, T. Feng. S. V. Kalinin, P. D. Ye, S. T. Pantelides, P. Maksymovych, N. M. Balke, “Alignment of polarization against an electric field in van der Waals ferroelectrics”, Phys. Rev. A. 13, 064063 (2020).

[17] R. Vasudevan, S. M. Neumayer, M. A. Susner, M. A. McGuire, S. T. Pantelides, P. Maksym ovych, D. N. Leonard, N. Balke, A. Y. Borisevich, “Domains and topological defects in layered ferroelectric materials”, ACS Appl. Nano Mater. 3, 8161 (2020).

[18] A. Dziaugys, K. Kelley, J. A. Brehm, A. Puretzky, T. Feng, S. Neumayer, M. Chyasnavichyus, E. A. Eliseev, J. Banys, Y. Vysochanskii, F. Ye, B. Chakoumakos, M. A. McGuire, S. V. Kalinin, G. Panchapakesan, S. T. Pantelides, N. Balke, A. N. Morozovska, P. Maksymovych, “Piezoelectrically domain walls in van der Waals ferroelectric CuInP2Se6”, Nature Comm. 11, 1 (2020).

[19] S. M. Neumayer, J. Brehm, L. Tao, A. O’Hara, P. Ganesh, S. Jesse, M. Susner, M. McGuire, S. T. Pantelides, P. Maksymovych, N. Balke, “Local strain and polarization mapping in ferrielectric materials”, ACS Appl. Mater. Inter. 12, 38546 (2020)

[20] L. Liu, L. Wu, A. Wang, H. Liu, R. Ma, K. Wu, J. Chen, Z. Zhou, Y. Tian, H. Yang, C.-M. Shen, L. Bao, Z. Qin, S. T. Pantelides, H.-J. Gao, “Ferroelectric-gated InSe photodetectors with high on/off ratios and photoresponsivity”, Nano Lett. 20, 6666 (2020).

[21] K. Appavoo, J. Nag, B. Wang, W. Luo, G. Duscher, E. A. Payzant, M. Y. Sfeir, S. T. Pantelides, R. F. Haglund Jr., “Doping-driven electronic and lattice dynamics in the phase-change material vanadium dioxide”, Phys. Rev. B. 102, 115148 (2020).

[22] S. M. Neumayer, A. Morazovska, E. Eliseev, J. Brehm, M. A. Susner, M. A. McGuire, S. T. Pantelides, P. Maksymovych, N. Balke, “The concept of negative capacitance in ionically conductive van-der-Waals ferroelectrics”, Adv. Ener. Mater. 10, 2001726 (2020).

[23] H. Guo, X. Wang, L. Huang, X. Jin, Z.-Z. Yang, Z. Zhou, H. Hu, Y.-Y. Zhang, H. Lu, Q. Zhang, C. Shen, X. Lin, L. Gu, Q. Dai, L.-H. Bao, S. Du, W. Hofer, S. T. Pantelides, H.-J. Gao, “Insulating SiO2 under centimeter-scale, single-crystal, single-crystal Graphene enables electronic-device fabrication”, Nano Lett 20, 8584 (2020).

[24] O. S. Ovchinnikov, A. O’Hara, S. Jesse, B. M. Hudak, S.-Z. Yang, A. r. Lupini, M. F. Chisholm, W. Zhu, s. V. Kalinin, A. Y. Borisevich, S. T. Pantelides, “Detection of defects in atomic-resolution images of materials using cycle analysis”, Adv. Struct. Chem. Imag. 6, 1 (2020).

 

2019

[1] J. Fang, M. Reaz, S. L Weeden-Wright, R. D. Schrimpf, R. A. Reed, R. A. Weller, M. V Fischetti, and S. T. Pantelides, “Understanding the average electron-hole-pair creation energies in Silicon and Germanium from full-band Monte Carlo simulations”, IEEE Trans. Nucl. Sci. 66, 444 (2019).

[2] P. Wang, H. Kalita, A. Krishnaprasad, D. Dev, A. O’Hara, R. Jiang, E. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, and T. Roy, “Total-ionizing-dose response of MoS2 transistors with ZrO2 and h-BN gate dielectrics”, IEEE Trans. Nucl. Sci. 66, 420 (2019).

[3] J. Liu, and S. T. Pantelides, “Pyroelectric response and temperature-induced α-β phase transitions in α-III2VI3 (III=Al, Ga, In; VI=S, Se) monolayers”, 2D Mater. 6, 025000 (2019).

[4] S. M. Neumayer, E. A. Eliseev, M. A. Susner, A. Tselev, B. J. Rodriguez, J. A. Brehm, S. T. Pantelides, G. Panchapakesan, S. Jesse, S. V. Kalinin, M. A. McGuire, A. N. Morozovska, P. Maksymovych, N. Balke, “Giant negative electrostriction and dielectric tenability in a van der Waals layered ferroelectric”, Phys. Rev. Mater. 3, 024401 (2019).

[5] M. Hong, Y. Wang, T. Feng, Q. Sun, S. Xu, S. Matsumura, S. T. Pantelides, J. Zou, and Z.-G. Chen, “Strong intrinsic phonon-phonon interactions securing extraordinary thermoelectric Ge1-xSbxTe with Zn-Doping induced band alignment”, J. Am. Chem. Soc. 141, 1742 (2019).

[6] Z. Cheng, A. Weidenbach, T. Feng, M. B. Tellekamp, S. Howard, M. J. Wahila B. Zivasatienraj, B. Foley, S. T. Pantelides, L. F. J. Piper, W. Doolittle, and S. Graham, “Diffusion-driven ultralow thermal conductivity in amorphous Nb2O5”, Phys. Rev. Mater. 3, 025002 (2019.

[7] M. Jin, X.-L. Shi, T. Feng, W. Liu, H. Feng, S. T. Pantelides, J. Jiang, Y. Chen, Y. Du, J. Zou, Z.-G. Chen, “Super large Sn1-xSe single crystals with excellent thermoelectric performance”, ACS Appl. Mater. Interfaces 11, 8051 (2019).

[8] S.-Z. Yang, W.-W. Sun, Y.-Y. Zhang, Y. Gong, M. Oxley, A. R. Lupini, P. Ajayan, M. F. Chisholm, S. T. Pantelides, W. Zhou, “Direct cation exchange in monolayer MoS2 via ‘explosive’ recombination-enhanced migration”, Phys. Rev. Lett. 122, 106101 (2019).

[9] X. Shi, A. Wu, T. Feng, K. Zheng, W. Liu, M. Hong, Q. Sun, S. T. Pantelides, Z.-G. Cheng, and J. Zou, “High thermoelectric-performance p-type polycrystalline Cd-doped SnSe achieved by the combination of cation vacancy and localized lattice engineering”, Adv. Energ. Mater. 9, 1803242 (2019).

[10] J. A. Hachtel, S. Y. Cho, R. B. Davidson II, M. F. Chisholm, R. F. Haglund, J.-C. Idrobo, S. T. Pantelides, B. J. Lawrie, “Spatially and spectrally resolved orbital angular momentum interactions in plasmonic vortex generators”, Light: Science & Applications 8, 33 (2019).

[11] J. Fang, M. V. Fischetti, R. D. Schrimpf, E. Bellotti, S. T. Pantelides, “Electron transport properties of AlxGa1-xN/GaN transistors based on first-principles calculations and Boltzmann-equation Monte Carlo simulation”, Phys. Rev. Appl. 11, 044045 (2019).

[12] M. Saghayezhian, S. Kouser, Z. Wang, H. Guo, R. Jin, J. Zhang, Y. Zhu, S. T. Pantelides, and E. W. Plummer, “Atomic-scale determination of spontaneous magnetic reversal in oxide heterostructures”, Proc. Natl. Acad. Sci. U.S.A. 116, 10309 (2019.

[13] Z. Cheng, T. Bai, J. Shi, T. Feng, Y. Wang, M. Mecklenburug, C. Li, K. D. Hobart, T. I. Feygelson, M. J. Tadjer, B. B. Pate, B. M. Foley, L. Yates, S. T. Pantelides, B. A. Cola, M. Goorsky, S. Graham, “Tunable thermal energy transport across diamond membranes and diamond-Si interfaces by nanoscale graphoepitaxy”, ACS Appl. Mater. Inter. 11, 18517 (2019).

[14] B. M. Hudak, W. Sun, J. Mackey, A. Sehilioglu, F. Dynys, S. T. Pantelides, and B. S. Guiton, “Observation of square-lanar distortion in Lanthanide-doped Skutterudite crystals”, J. Phys. Chem. 123, 14632 (2019).

[15] A. D. Oyedele, S. Yang, T. Feng, Y. Gu, A. Haglund, A. A. Puretzky, D. Briggs, C. Rouleau, M. F. Chisholm, R. R. Unocic, D. Mandrus, D. B. Geohegan, S. T. Pantelides, K. Xiao, “Defect-mediated phase transformation in anisotropic 2D PdSe2 crystals for seamless electrical contact devices”, J. Amer. Chem. Soc. 141, 8928 (2019).

[16] B. R. Tuttle, T. Summers, C. Barger, J. Noonan, S. T. Pantelides, “Theory of photo-ionization defects in nano-porous SiC alloys”, J. Appl. Phys. 125, 215703 (2019).

[17] J. Bonacum, A. O’Hara, J.-C. Idrobo, O. S. Ovchinnikov, R. F. Haglund, S. T. Pantelides, K. Bolotin, “Atomic-resolution visualization and doping effects of complex structures in intercalated bilayer Graphene”, Phys. Rev. Mater. 3, 064004 (2019).

[18] C. Gao, L. Tao, Y.-Y. Zhang, S. Du. S. T. Pantelides, J. C. Idrobo, W. Zhou, H.-J. Gao, “Spectroscopy signature of edge states in hexagonal boron nitride”, Nano Research 12, 1663 (2019).

[19] S. Yang, P. Manchanda, Y. Gong, S. T. Pantelides, W. Zhou, M. F. Chisholm, “Electronic structure and coupling of RE clusters in monolayer MoS2”, Microsop. Microanal. 25, 506 (2019).

[20] Z.-L. Liu, B. Lei, Z.-L. Zhu, L. Tao, J. Qi, D.-L. Bao, X. Wu, L. Huang, Y.-Y. Zhang, X. Lin, Y.-L. Wang, S. Du, S. T. Pantelides, and H.-J. Gao, “Spontaneous formation of 1D pattern in monolayer VSe2 with dispersive adsorption of Pt atoms for HER catalysis”, Nano Lett. 19, 4897 (2019).

[21] R.-S. Ma, J. Ma, J. Yan, L. Wu, H. Liu, W. Guo, S. Wang, Q. Huan, L. Bao, S. Du, S. T. Pantelides, H. J. Gao, “Direct probing of imperfection-induced electrical degradation in millimeter-scale Graphene on SiO2 substrates”, 2D Mater. 6, 045033 (2019).

[22] H. Chen, X.-L. Zhang, D. Wang, D.-L. Bao, Y. Que, W. Xiao, S. Du, M. Ouyang, S. T. Pantelides, H.-J. Gao, “Atomically-precise, custom-design origami Graphene nanostructures”, Science 365, 1036 (2019).

[23] H. Guo, X. Wang, K. Qian, J. Yan, L. Bao, H. Lu, Y. Zhang, G. Li, L. Huang, X. Lin, S. Du, S. T. Pantelides, H.-J. Gao, “Centimeter-scale, single-crystalline, AB-stacked bilayer graphene on insulating substrates”, 2D Mater. 6, 045044 (2019).

[24] J. Liu, S. Liu, B. Hanrahan, and S. T. Pantelides, “Origin of pyroelectricity in ferroelectric HfO2”, Phys. Rev. Appl. 12, 034032 (2019).

[25] H. Sims, D. N. Leonard, A. Y. Birenbaum, Z. Ge, L. Li, V. R. Cooper, M. F. Chisholm, S. T. Pantelides, “Intrinsic interfacial van der Waals monolayers and their effect on the high-temperature superconductor FeSe/SrTiO3”, Phys. Rev. B. 14, 144103 (2019).

[26] M. Dargusch, X.-L. Shi, X. Q. Tran, T. Feng, F. Somidin, X. Tan, W. Liu, K. Jack, J. Venezuela, H. Maeno, T. Toriyama, S. Matsumura, S. T. Pantelides, Z.-G. Chen, “In-situ observation of the continuous phase transition in determining the high thermoelectric performance or polycrystalline Sn0.98Se”, J. Phys. Chem. Lett. 10, 6512 (2019).

[27] M. Meng, Z. Wang, A. Fathima, S. Ghosh, M. Saghayezhian, R. Jin, Y. Zhu, S. T. Pantelides, J. Zhang, W. Plummer, and H. Guo, “Interface-induced magnetic polar metal phase in complex oxides”, Nat. Commun. 10, 5248 (2019).

[28] P. Wang, C. J. Perini, A. O’Hara, H. Gong, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, E. M. Vogel, “Total-ionizing-dose effects and proton-induced displacement damage on MoS2-interlayer-MoS2 tunnel junctions”, IEEE Trans. Nucl. Sci. 66, 420 (2019).

[29] S. Bonaldo, S. E. Zhao, A. O’hara, M. Gorchichko, E. X. Zhang, S. Gerardin, A. Paccagnella, N. Waldron, N. Collaert, D. Linten, S. T. Pantelides, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, “Low-frequency noise and total-ionizing-dose irradiation-induced defects in 16nm InGaAs FinFETs”, IEEE Trans. Nucl. Sci. 67, 210 (2019).

2018

[1] C.E. Marvinney, X. Shen, J.R. McBride, D. Critchlow, Z. Li, D.C. Mayo, R.R. Mu, S.T. Pantelides, R.F. Haglund, “Effect of material structure on photoluminescence of ZnO/MgO core-shell nanowires”, Chem. Nano. Mater. 2018 (4), 1-11, January 19, 2018.

[2] Y.-N. Wu, X.-G. Zhang, S.T. Pantelides, “Wu, Zhang and Pantelides reply to ‘Fundamental resolution of difficulties in the theory of charged point defects in semiconductors’”, Phys. Rev. Lett. 3 (120), 039604, January 19, 2018.

[3] J. Lin, J. Zhou, S. Zuluaga, P. Yu, Z. Liu, S.T. Pantelides, K. Suenaga, “Anisotropic ordering in 1T’ molybdenum and tungsten ditelluride layers alloyed with Sulphur and selenium”, ACS Nano 18 (1), 894-901, January 23, 2018.

[4] J.A. Hachtel, S.Y. Cho, R.B. Davidson II, M.F. Chisholm, R.F. Haglund, J.C. Idrobo, S.T. Pantelides, B.J. Lawrie, “Polarization- and wavelength-resolved near-field imaging of complex plasmonic modes in Archimedean nanospirals”, Opt. Lett. 4 (43), 927-930, February 15, 2018.

[5] J.C. Idrobo, A.R. Lupini, T. Feng, R.R. Unocic, F.S. Walden, D.S. Gardiner, T.C. Lovejoy, N. Delby, S.T. Pantelides, O.L. Krivanek, “Temperature Measurement by a nanoscale electron probe using energy gain and loss spectroscopy”, Phys. Rev. Lett. 9 (120), 095901, March 2, 2018.

[6] J.A. Brehm, J. Lin, J. Zhou, S.T. Pantelides, “Electron-beam-induced synthesis of hexagonal 1H-MoSe4­2 from square beta-FeSe decorated with Mo adatoms”, Nano Lett. 18 (3), 2016-2020, March 13, 2018.

[7] W. Zhou, Y.-Y. Zhang, J. Chen, D. Li, J. Zhou, Z. Liu, M.F. Chisholm, S.T. Pantelides, K.P. Loh, “Dislocation-driven growth of two-dimensional lateral quantum well superlattices”, Sci. Adv. 4 (3), 9096, March 23, 2018.

[8] D. L. Bao, Y.Y. Zhang, S.T. Pantelides, S.-X. Du, H.-J. Gao, “A barrierless on-surface metalation process for porphyrin-based molecules”, J. Phys. Chem. C 122 (12), 6678-6683, March 29, 2018.

[9] C. D. Liang, Y. Su, A. O’Hara, E.X. Zhang, M.L. Alles, P. Wang, S.E. Zhao, S.T. Pantelides, S.J. Koester, R.D. Schrimpf, D.M. Fleetwood, “Defects and low-frequency noise in irradiated black phosphorus MOSFETs with HfO2 gate dielectrics”, IEEE Trans. Nucl. Sci. 65 (6), 1227-1238, April 19, 2018.

[10] J. Liu, C.-Y. Lai, Y.-Y. Zhang, M. Chiesa, S.T. Pantelides, “Water wettability of graphene: Interplay betweent he interfacial water structure and the electronic structure”, RSC Adv. 8, 16918, May 8, 2018.

[11] B. M. Hudak, J. Song, H. Sims, M.C. Troparevsky, S.T. Pantelides, P.C. Snijders, A.R. Lupini, “Directed atom-by-atom assembly of dopants in silicon”, ACS Nano 12 (6), 5873-5879, May 11, 2018.

[12] J. Liu, S. T. Pantelides, “Mechanisms of pyroelectricity in thre-and two-dimensional materials”, Phys. Rev. Lett. 120 (20), 207602, May 17, 2018.

[13] B. Xu, T. Feng, Z. Li, S. T. Pantelides, and Y. Wu, “Constructing highly porous thermoelectric monoliths with high-performance and improved portability from solution-synthesized shape-controlled nanocrystals”, Nano Lett. 18 (6), 4034-4039, May 28, 2018.

[14] G. Mettela, S. Kouser, C. Sow, S. T. Pantelides, and G. U. Kulkarni, “Nobler than the noblest: Noncubic gold microcrystallites”, Angew. Chem. Int. Ed. doi:10.1002/anie.201804541, May 30, 2018.

[15] S. Zuluaga, J. Lin, K. Suenaga, S.T. Pantelides, “Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires”, 2D Mater. 5 (3), 035025, June 1, 2018.

[16] J. Whelan, M. Katsiotis, S. Stephen, G. Luckachan, A. Tharalekshmy, D. Banu, J.-C. Idrobo, S.T. Pantelides, R. Vladea, I. Banu, S. Al Hassan, “Cobalt-molybdenum single-layered nanocatalysts decorated on carbon nanotubes and the influence of preparation conditions on their hydrodesulfurization catalytic activity”, Energy Fuels, June 19, 2018.

[17] H. Chen, Y. Que, L. Tao, Y.Y. Zhang, W. Xiao, D. Wang, S.-X. Du, S.T. Pantelides, H.-J. Gao, “Recovery of edge states of graphene nanoislands on a metal substrate by silicon intercalations”, Nano Res. 11 (7), 3722-3729, July 1, 2018.

[18] V. Tzitzios, K. Dimos, S. Alhassan, A. Kouloumpis, D. Gournis, N. Boukos, R. Michra, M. Roldon, J.-C. Idrobo, S.T. Pantelides, A. Borisevich, M.a. Karakassides, G. Basina, Y. Alwahedi, H.J. Kim, M. Fardis, S. Pennycook, G. Papavasileiou, “Facile MoS2 growth on reduced graphene-oxide via liquid phase method”, Front. Mater. 5 (29), July 2, 2018.

[19] N. Balke, S. M. Neumayer, J. A. Brehm, M. A. Susner, B. J. Rodriquez, S. Jesse, S. V. Kalinin, S. T. Pantelides, M. A. McGuire, and P. Maksymovych, “Localy controlled Cu-ion transport in layered ferroelectric CuInP2S6”, ACS Appl. Mater. Interfaces 10 (32), 27188-27194, July 23, 2018.

[20] N. Huo, Y. Yang, Y.-N. Wu, X.-G. Zhang, S. T. Pantelides, G. Konstantatos, “High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression”, Nanoscale 2018, 15071-15077, July 24, 2018.

[21] H. Chen, D.-L. Bao, D. Wang, Y. Que, W. Xiao, G. Qian, H. Guo, J. Sun, Y.-Y. Zhang, S. Du, S.T. Pantelides, H.-J. Gao, “Fabrication of millimeter-scale, single-crystal one-third-hydrogenated graphene with anisotropic properties”, Adv. Mater. 30 (32), 1801838, August 6, 2018.

[22] B. Xu, T. Feng, X. Li, S.T. Pantelides, Y. Wu, “Creating zipper-like van der Waals gap discontinuity in low-temperature-processed nanostructured PbBi2nTe1+3n for enhanced phonon scattering and improved thermoelectric performance”, Angew. Chem. Int. Ed. 57 (34), 10938-10943, August 20, 2018.

[23] J. Liu, and S. T. Pantelides, “Electrowetting on two-dimensional dielectrics: A quantum molecular dynamics investigation”, J. of Phys. Cond. Matter. 30 (37), 375001, August 22, 2018.

[24] J. Liu, and S. T. Pantelides, “Anisotropic thermal expansion of group-IV monochalcogenide monolayers”, Appl. Phys. Exp. 11 (10), 101301, August 28, 2018.

[25] R. Jiang, S. Xhen, J.T. Feng, P. Wang, E.x. Zhang, J. Chen, D.M. Fleetwood, R.D. Schrimpf, S.W. kaun, E.C.H. Kyle, J.S. Speck S.T. Pantelides, “Multiple defects caused degradation after high field stress in AlGaN/GaN HEMTs”, IEEE Trans. Device Mater. Rev. 18 (3), 364-376, September 1, 2018.

[26] J. Liu, O. B. Wani, S. M Alhassan, S. T. Pantelides, “Wettability alteration and enhanced oil recovery induced by proximal adsorption of Na­+, Cl-, Ca2T, and SO42- ions on calcite”, Phys. Rev. Appl. 10 (3), 034064, September 27, 2018.

[27] O. S. Ovchinnikov, A. O’Hara, R. Nicholl, K. Bolotin, J. Hachtel, A. Lupine, S. Jesse, A. Y. Borisevich, S. T. Pantelides, and S. V. Kalinin, “Theory-assisted determination of nano-rippling in atomic resolution images of angle-mismatched bilayer graphene”, 2D Mater. 5 (4), 041008, September 7, 2018.

[28] G. Sanchez-Santolino, J. Salafranca S. T. Pantelides, S. J. Pennycook, C. Leon, and M. Varela, “Localization of Yttrium segregation within YSZ grain boundary dislocation cores”, Phys. Status Solidi A 215, 1800349, October 10, 2018.

[29] L. Tao, W. Guo, Y.-Y. Zhang, Y.-F. Zhang, S. Du, S.T. Pantelides, and H.-J. Gao, “Quantum nutcracker for near-room-temperature hydrogen dissociation”, Science Bulletin 64, 4, November 15, 2018.

[30] E. Shi, T. Feng, J.-H. Bahk, Y. Pan, W. Zheng, Z. Li, G. J. Snydr, S. T. Pantelides, “Experimental and theoretical study on well- tunable nano-sized metal oxide doping towards high-performance thermoelectrics”, Energ. Environ. Sci. 2, 43, November 14, 2018.

[31] J. Zhu, T. Feng, S. Mills, P.-P. Wang, X. W. Wu, L. Zhang, S. T. Pantelides, X. Du, and X. Wang, “Record-low and anisotropic thermal conductivity of quasi-1D bulk ZrTe5 single crystal”, ACS Appl. Mater. Interfaces 10, 40740, November 28, 2018.

[32] Y. Cao, Y.-F. Zhang, L. Huang, J. Qi, Q. Zhang, X. Lin, Z. Cheng, Y.-Y. Zhang, X. Feng, S. Du, S. T. Pantelides, H.-J. Gao, “Tuning the morphology of chevron-type graphene nanoribbons by choice of annealing temperature”, Nano Res. 11, 6190, December 1, 2018.

[33] G. Li, L. Zhang, W. Xu, S. Song, Y. Zhang, H. Zhou, Y. Wang, L. Bao, Y.-Y. Zhang, S. X. Du, S. T. Pantelides, H.-J. Gao, “Stable silicone in graphene/silicone Van-der-waals heterostructure”, Adv. Mater. 30, 1804650, December 6, 2018.

[34] P. Wang, C. J. Perini, A. O’Hara, H. Gong, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, and E. M. Vogel, “Total-ionizing-dose effects and proton-induced displacement damage on MoS2-interlayer-MoS2 tunnel junctions”, IEEE Trans. Nucl. Sci., online, December 7, 2018.

[35] S. Z. Yang, Y. Gong, P. Manchanda, Y.-Y. Zhang, G. Ye, S. T. Pantelides, P. M. Ajayan, M. F. Chisholm, W. Zhou, “Rhenium-doped and stabilized MoS2 atomic layers with basal-plane catalytic activity”, Adv. Mater. 30, 1803477, December 20, 2018.

[36] E. A. Hernandez-Pagan, A. O’Hara, S. L. Arrowood, J. R. McBride, J. Rhodes, S. T. Pantelides, and J. E. Macdonald, “Transformation of the anion sublattice in the cation exchange synthesis of Au2S from Cu2S”, Chem. Mater. 30, 88438851, December 26, 2018.

2017

[1] E. X. Zhang, D. M. Fleetwood, J. A. Hachtel, C. Liang, R. A. Reed,
M. L. Alles, R. D. Schrimpf, D. Linten, J. Mitard, M. F. Chisholm, and S. T. Pantelides, “Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si”, IEEE Trans. Nucl. Sci. 64 (1), 226-232, January 2017.

[2] R. Jiang, E. X. Zhang, M. W. McCurdy, J. Chen, X. Shen, P. Wang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides, “Worst-case bias for proton and 10-keV x-ray irradiation of AlGaN/GaN HEMTs”, IEEE Trans. Nucl. Sci. 64 (1), 218-225, January 2017.

[3] J. Zhou, F. Liu, J. Lin, X. Huang, J. Xia, B. Zhang, Q. Zeng, H. Wang, C. Zhu, L. Niu, X. Wang, W. Fu, P. Yu, T. R. Chang, C. H. Hsu, D. Wu, H. T. Jeng, Y. Huang, H. Lin, Z. Shen, C. Yang, L. Lu, K. Suenaga, W. Zhou, S. T. Pantelides, G. Liu, Z. Liu, “Large-area and high-quality 2D transition metal telluride”, Adv. Mater. 29 (3), January 1, 2017.

[4] H. Aldridge, A. G. Lind, C. C. Bomberger, Y. Puzyrev, J. M. Zide, S. T. Pantelides, M. E. Law, “N-type doping strategies for InGaAs”, Mat. Sci. in Semicon. Proc. 62, 171-179, January 4, 2017.

[5] B. R. Tuttle, N. J. Held, L. H. Lam, Y.-Y. Zhang, S. T. Pantelides, “Properties of hydrogenated nanoporous SiC: an ab initio study”, J. Nanomater. 2017, January 10,2017.

[6] A. D. La Croix, A. O’Hara, K. R. Reid, N. J. Orfield, S. T. Pantelides, S. J. Rosenthal, J. E. Macdonald, “Design of a hole trapping ligand”, Nano Lett. 17 (2), 909-914, January 19, 2017.

[7] L. Huang, Y.-F. Zhang, Y.-Y. Zhang, W. Xu, Y. Que, E. Li, J. B. Pan, Y. L. Wang, Y. Liu, S.-X. Du, S. T. Pantelides, H.-J. Gao, “Sequence of silicon monolayer structures grown on a Ru surface: from a herringbone structure to silicene”, Nano Lett. 17 (2), 1161-1166, January 23, 2017.

[8] B. R. Tuttle, S. T. Pantelides, “The properties of isolated dangling bonds on hydrogenated 2H-SiC surfaces”, Surf. Sci. 656, 109-114, February 28, 2017.

[9] S. Xu, X. Shen, K. A. Hallman, R. F. Haglund Jr., S. T. Pantelides, “Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases”, Phys. Rev. B 95 (12), 125105, March 6, 2017.

[10] G. Wang, L. Bao, R. Ma, T. Pei, Y.-Y. Zhang, L. Wu, Z. Zhou, H. Yang, J. Li, C. Gu, S. Du, S. T. Pantelides, H.-J. Gao, “From bidirectional rectifier to polarity-controllable transistor in black phosphorus by dual gate modulation”, 2D Mater. 4 (2), 025056, March 24, 2017.

[11] A. O’Hara, R. E. Kahn, Y.-Y. Zhang, S. T. Pantelides, “Defect-mediated leakage in lithium intercalated bilayer grapheme”, AIP Adv. 7 (4), 045205, April 2017.

[12] B. Tuttle, S. Alhassan, S.T. Pantelides, “Computational predictions for single change chalcogenide-based one-dimensional materials”, Nanomaterials 7 (5), 115, May 17, 2017.

[13] J. H. Jang, Y. M. Kim, Q. He, R. Mishra, L. Qiao, M. D. Biegalski, A. R. Lupini, S. T. Pantelides, S. J. Pennycook, S. V. Kalinin, A. Y. Borisevich, “In-situ observation of oxygen vacany dynamics and ordering in the epitaxial LaCoO3 system”, ACS Nano 11 (7), June 11, 2017.

[14] X. Lin, J.C. Lu, Y. Shao, Y.-Y. Zhang, X. Wu, J. B. Pan, L. Gao, S. Y. Zhu, K. Qian, Y.-F. Zhang, D.-L. Bao, L. F. Li, Y. Q. Wang, Z. L. Liu, J. T. Sun, T. Lei, C. Liu, J. O. Wang, K. Ibrahim, D. N. Leonard, W. Zhou, H. M. Guo, Y.-L. Wang, S.-X. Du, S. T. Pantelides, H.-J. Gao, “Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters”, Nat. Mater. 16, 717-721, June 12, 2017.

[15] H. Guo, Z. Wang, S. Dong, S. Ghosh, M. Saghayezhian, L. Chen, Y. Weng, A. Herklotz, T. Z. Ward, R. Jin, S. T. Pantelides, Y. Zhu, J. Zhang, E. W. Plummer, “Interface-induced multiferroism by design in complex oxide superlattices”, P. Natl. Acad. Sci. USA 114 (26), E5062-E5062, June 27, 2017.

[16] D. Fu, X. Zhao, Y.-Y. Zhang, L. Li, H. Xu, A. R. Jang, S. I. Yoon, P. Song, S. M. Poh, T. Ren, Z. Ding, W. Fu, T. J. Shin, H. S. Shin, S. T. Pantelides, W. Zhou, K. P. Loh, “Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride”, J. Am. Chem. Soc. 139 (27), 9392-9400, July 3, 2017.

[17] J. Lin, S. Zuluaga, P. Yu, Z. Liu, S. T. Pantelides, K. Suenaga, “Novel Pd2Se3 two-dimensional phase driven by interlayer fusion in layered PdSe2”, Phys. Rev. Lett. 119 (1), 016101, July 6, 2017.

[18] H. Chen, T. Pope, Z. Wu, D. Wang, L. Tao, D.-L. Bao, W. Xiao, J.-L. Zhang, Y.-Y. Zhang, S.-X. Du, S. Gao, S. T. Pantelides, W. A. Hofer, H.-J. Gao, “Evidence for ultra-low-energy vibrations in large organic molecules”, Nano Lett. 17 (8), 4929, August 9, 2017.

[19] H. D. Yoo, Y. Liang, H. Dong, J. Lin, H. Wang, Y. Liu, L. Ma, T. Wu, Y. Li, Q. Ru, Y. Jing, Q. An, W. Zhou, J. Guo, J. Lu, S. T. Pantelides, X. Qian, Y. Yao, “Fast kinetics of magnesium monochloride cations in interlayer-expanded titanium disulfide for magnesium rechargeable batters”, Nat. Commun. 8 (1), 339, August 24, 2017.

[20] S. Zuluaga, P. Manchanda, Y.-Y. Zhang, S. T. Pantelides, “Design of optimally stable molecular coatings for Fe-based nanoparticles in aqueous environments”, ACS Omega 2 (8), 4480, August 31, 2017.

[21] Y.-N. Wu, X.-G. Zhang, S. T. Pantelides, “Fundamental resolution of difficulties in the theory of charged point defects in semiconductors”, Phys. Rev. Lett. 119 (10), 105501, September 7, 2017.

[22] R. Ma, Q. Huan, L. Wu, J. Yan, W. Guo, Y.-Y. Zhang, S. Wang, L. Bao, Y. Liu, S.-X. Du, S. T. Pantelides, H.-J. Gao, “Direct four-probe measurement of grain-boundary resistivity and mobility in millimeter-sized graphene”, Nano Lett. 17 (9), 5291-5296, September 13, 2017.

[23] Y.-F. Zhang, Y. Zhang, G. Li, J. Lu, Y. Que, H. Chen, R. Berger, X. Feng, K. Mullen, X. Lin, Y.-Y. Zhang, S. Du, S. T. Pantelides, H.-J. Gao, “Sulfur-doped graphene nanoribbons with a sequence of distinct band gaps”, Nano Res. 10 (10), 3377-3384, October 1, 2017.

[24] P. Wang, C. Perini, A. O’Hara, B.R. Tuttle, E.X. Zhang, H. Gong, C. Liang, R. Jiang, W. Liao, D.M. Fleetwood, R.D. Schrimpf, E.M. Vogel, S.T. Pantelides, “Radiation-induced charge trapping and low-frequency noise of graphene transistors”, IEEE T. Nucl. Sci. PP (99), October 10, 2017.

[25] Y.S. Puzyrev, X. Shen, C.X. Zhang, J. Hachtel, K. Ni, B.K. Choi, E.X. Zhang, O. Ovchinnikov, R.D. Schrimpf, D.M. Fleetwood, S.T. Pantelides, “Memristive devices from ZnO nanowire bundles and meshes”, Appl. Phys. Lett. 111 (15), 153504, October 13, 2017.

[26] S. Ghosh, A.Y. Borisevich, S.T. Pantelides, “Engineering a ferroelectric superlattice from metallic components”, Phys. Rev. Lett. 119 (17), 177603, October 25, 2017.

[27] S. May, S.T. Pantelides, “Structural ‘delta-doping’ of octahedral rotations to engineer local magnetization in isovalent manganite superlattices”, Phys. Rev. Lett. 119 (19), 197204, November 8, 2017.

[27] S. Prabhakar, J. Liu, Y.-Y. Zhang, S.T. Pantelides, “Atomic-scale theory of wettability alteration of calcite oil wells by additives in sea water”, Soc. Petrol. Eng. J., November 13, 2017.

[28] J.A. Santana, R. Mishra, J.T. Krogel, A.Y. Borisevich, P.R.C. Kent, S.T. Pantelides, F.A. Reboredo, “Quantum many-body effects in defective transition metal oxide superlattices”, J. Chem. Theory Comput. 13 (11), 5604-5609, November 14, 2017.

[29] J. Song, B.M. Hudak, H.R. Sims, Y. Sharma, T.Z. Ward, S.T. Pantelides, A.R. Lupini, P.C. Snijders, “Homo-endotaxial one-dimensional Si nanowires”, Nanoscale 10 (1), 260-267, November 29, 2017.

[30] X. Zhao, D. Fu, Z. Ding, Y.-Y. Zhang, D. Wan, S.J. Tan, Z. Chen, K. Leng, J. Dan, W. Fu, P. Song, Y. Du, T. Venkatesan, S.T. Pantelides, S.J. Pennycook, W. Zhou, K.P. Loh, “Mo-terminated edge reconstructions in nanoporous molybdenum disulfide film”, Nano Lett. 18 (1), 482-490, published online December 18, 2017.

2016

[1] Y. Puzyrev, X. Shen and S. T. Pantelides, “Prediction of giant thermoelectric efficiency in crystals with interlaced nanostructure”, Nano Lett. 16, 212-125, January 2016.

[2] T. Kishida, M. D. Kapetanakis, J. Yan, B. C. Sales, S. T. Pantelides, S. J. Pennycook, and M. F. Chisholm, ”Magnetic ordering in Sr3YCo4O10+x”, Sci. Rep. 6, 19762, January 28, 2016.

[3] G. L. Ye, Y. Gong, J. Lin, B. Li, Y. M. He, S. T. Pantelides, W. Zhou, R. Vajtai, and P. M. Ajayan, “Defects engineered monolayer MoS2 for improved hydrogen evolution reaction”, Nano Lett. 16, 1097-1103, February 2016.

[4] J. Lin, Y. Y. Zhang, W. Zhou, and S. T. Pantelides, “Structural flexibility and alloying in ultrathin transition-metal chalcogenide nanowires”, ACS Nano, 10, 2782-2790, February 2016.

[5] T. Pei, L. Bao, G. Wang, R. Ma, H. Yang, J. Li, C. Gu, S. T. Pantelides, S. Du, and H. Gao, “Few-layer SnSe2 transistors with high on/off ratios”, App. Phys. Lett. 108, 053506, February 1, 2016.

[6] A. Leach, X. Shen, A. Faust, M. C. Cleveland, A. D. La Croix, U. Banin, S. T. Pantelides, and J. E. Macdonald, “Defect luminescence from wurtzite CuInS2 nanocrystals: Combined experimental and theoretical analysis”, J.Phys. Chem. C. 120, 5207-5212, March 10, 2016.

[7] J. Hachtel, S. Yu, A. R. Lupini, S. T. Pantelides, M. Gich, A. Laromaine, and A. Roig “Gold nanotriangles decorated with superparamagnetic iron oxide nanoparticles: a compositional and microstructural study”, Faraday Discussions, 191, 215-227, March 11, 2016.

[8] J. Gazquez, R. Guzman, R. Mishra, E. Bartolome, J. Salafranca, C. Magen, M. Varela, M. Coll, A. Palau, S. M. Valvidares, P. Gargiana, E. Pellegrin, J. Herrero-Martin, S. J. Pennycook, S. T. Pantelides, T. Puig, and X. Obradors, “Emerging diluted ferromagnetism in high-Tc superconductors driven by point defect clusters”, Adv. Sci. 3, March 15, 2016.

[9] Y. Gong, G. Ye, S. Lei, G. Shi, Y. He, J. Lin, X. Zhang, R. Vajtai, S. T. Pantelides, W. Zhou, B. Li, and P Ajayan, “Synthesis of millimeter-scale transition metal dichalcogenides single crystals”, Adv. Funct. Mat. 26, 2009-2015, March 22, 2016.

[10] S. Mukherjee, Y. Puzyrev, J. Chen, D. Fleetwood, R. Schrimpf, and S. T. Pantelides, “Hot-carrier degradation in GaN HEMTs due to substitutional iron and its complexes”, IEEE Trans. Elec. Dev. 63, 1486-1494, April 2016.

[11] X. Li, M. Lin, J. Lin, B. Huang, A. A. Puretzky, C. Ma, K. Wang, W. Zhou, S. T. Pantelides, M. Chi, I. Kravchenko, J. Fowlkes, C. Rouleau, D. Geohegan, and K. Xiao, “Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy”, Sci. Adv. 2, e1501882, April 15, 2016.

[12] J. Hachtel, C. Marvinney, A. Mouti, D. Mayo, R. Mu, S. J. Pennycook, A. R. Lupini, M. F. Chisholm, R. F. Haglund, and S. T. Pantelides, “Probing plasmons in three dimensions by combining complementary spectroscopies in a scanning transmission electron microscope”, Nanotech. 27, 155202, April 15, 2016.

[13] H. He, J. Lin, W. Fu, X. Wang, H. Wang, Q. Zeng, Q. Gu, Y.i Li, C. Yan, B. K. Tay, C. Xue, X. Hu, S. T. Pantelides, W. Zhou, and Z. Liu, “MoS2/TiO2 edge-on heterostructure for efficient photocatalytic hydrogen evolution”, Adv. Energy Mater. 2016, 1600464, May 6, 2016.

[14] J. Chen, Y. Puzyrev, E. Zhang, D. Fleetwood, R. Schrimpf, A. Arehart, S. Ringel, S. Kaun, E. Kyle, J. Speck, P. Saunier, C. Lee, and S. T. Pantelides, “High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs”, IEEE Trans. Device Mater. Rel. 16, 282-289, June 15, 2016

[15] R. Jiang, X. Shen, J. Chen, G. X. Duan, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, J. S. Speck, and S. T. Pantelides, “Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett. 109, 023511, July 13, 2016.

[16] R. Mishra, Y. Kim, Q. He, X. Huang, S.K. Kim, M. Susner, A. Bhattacharya, D. D. Fong, S. T. Pantelides, and A. Borisevich, “Towards spin-polarized two-dimensional electron gas at surface of an antiferromagnetic insulating oxide”, Phys. Rev. B. 94, 045123, July 18, 2016.

[17] Q. He, S. Ghosh, E. J. Moon, S. J. May, A. R. Lupini, S. T. Pantelides, and Albina Y. Borisevich, “Tracking BO6Coupling in Perovskite Superlattices to Engineer Magnetic Interface Behavior”, Microsc. Microanal., 22, 904-905, July 25, 2016.

[18] H. Aldridge, A. Lind, C. Bomberger, Y. Puzyrev, C. Hatem, R. G. William, J. M. O. Zide, S. T. Pantelides, M. Law, and K. Jones, “Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As”, J. Electr. Mat. 45, 4282-4287, August 2016.

[19] F. Liu, L. You, K. L. Seyler, X. Li, P. Yu, J. Lin, X. Wang, J. Zhou, H. Wang, H. He, S. T. Pantelides, W. Zhou, P. Sharma, X. Xu, P. M. Ajayan, J. Wang, and Z. Liu,”Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes”, Nature Comm. 7, 12357, August 11, 2016.

[20] X. Shen, T. J. Pennycook, D. Hernandez-Martin, A. Pérez, Y. Puzyrev, Y. Liu, S. G. E. te Velthuis, J. W. Freeland, P. Shafer, C. Zhu, M. Varela, C. Leon, Z. Sefrioui, J. Santamaria, and S. T. Pantelides, “High on/off ratio memristive switching of manganite/cuprate bilayer by interfacial magnetoelectricity”, Adv. Mat. Interf. 3, 1600086, August 19, 2016.

[21] X. Shen, Y. S. Puzyrev, C. Combs, and S. T. Pantelides, “Variability of structural and electronic properties of bulk and monolayer Si2Te3”, Appl. Phys. Lett. 109, 113104, September 13, 2016.

[22] M. J. Turo, X. Shen, N. K. Brandon, S. Castillo, A. M. Fall, S. T Pantelides and J. E. Macdonald, “Dual-mode crystal-bound and X-type passivation of quantum dots”, Chem. Comm. 52, 12214-12217, September 16, 2016.

[23] W. Zheng, J. Lin, W. Feng, K. Xiao, Y. Qiu, S. T. Pantelides, W. Zhou, X. S. Chen, G. Liu, W. Cao, and P. A. Hu, “Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor”, Adv.Funct. Mat. 26, 6371-6379, September 19, 2016.

[24] Y. Wu, X. Zhang, and S. T. Pantelides, “First-principles calculations reveal controlling principles for carrier mobilities in semiconductors”, Semicond. Sci. Technol. 31, 115016 October 11, 2016.

[25] H. Aldridge Jr., A. G. Linda , C. C. Bomberger , Y. Puzyrev , J. M.O. Zide , S. T. Pantelides, M. E. Law , Kevin S. Jones, “N-type doping strategies for InGaAs”, Materials Science in Semconductor Processing, 57, 39-47, October 19, 2016.

[26] K. Yin, Y-Y. Zhang, Y. Zhou, L. Sun, M. F. Chisholm, S. T Pantelides, and W. Zhou, “Unsupported single-atom-thick copper oxide monolayers”, 2D Mater., 4, 011001, October 20, 2016.

[27] L. Chen, Y. Y. Zhang, T. J. Pennycook, Y. Wu, A. R. Lupini, N. Paudel, S. T. Pantelides, Y. Yan, and S. J. Pennycook, “Column-by-column observation of dislocation motion in CdTe: Dynamic scanning transmission electron microscopy”, Appl. Phys. Lett. 109, 143107, October 24, 2016.

[28] G. Wang, L. Bao, T. Pei, R. Ma, Y. Y. Zhang, L. Sun, Guangyu Zhang, H. Yang, J. Li, S. Gu, S. Du. S. T. Pantelides, R. D. Schrimpf and H.- J. Gao, “Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices”, Nano Lett. 16, 6870-6878, October 27, 2016.

[29] M. D. Kapetanakis, M. P. Oxley, W. Zhou, S. J. Pennycook, J.-C. Idrobo, and S. T. Pantelides, “Signatures of distinct impurity configurations in atomic-resolution valence electron-energy-loss spectroscopy: Application to graphene” Phys. Rev. B. 94, 155449, October 31, 2016.

[30] G. X. Duan, J. A. Hachtel, E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, J. Mitard, D. Linten, L. Witters, N. Collaert, A. Mocuta, A. V.-Y. Thean, M. F. Chisholm, and S. T. Pantelides, “Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe pMOSFETs”, IEEE Trans. Device Mater. Rel, 16, 541-548, December 2016.

2015

[1] W. Zhou, K. Yin, C. Wang, Y. Zhang, T. Xu, A. Borishevich, L. Sun, J. C. Idrobo, M. Chisholm, S. T. Pantelides, R. Klie, and A. Lupini, “The observation of square ice in graphene questioned”, Nature, (in press December 2015).

[2] R. Nicholl, H. Conley, N. Lavrik, I. Vlassiouk, Y. Puzyrev, V. Parsi Sreenivas, S. T. Pantelides, and Kirill I. Bolotin, “The effect of intrinsic crumpling on the mechanics of free-standing graphene”, Nature Comm., 6, 8789, (2015).

[3] Y. Wang, L. Li, W. Yao, S. Song, J. T. Sun, J. Pan, X. Ren, C. Li, E. Okunishi, Y.-Q. Wang, E. Wang, Y. Shao, Y. Y. Zhang, H.-T. Yang, E. F. Schwier, H. Iwasawa, K. Shimada, M. Taniguchi, Z. Cheng, S. Zhou, S. Du, S. J. Pennycook, S. T. Pantelides, and H.-J. Gao, “Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt”, Nano Lett., 15, 4013−4018, (2015).

[4] X Shen, K Yin, YS Puzyrev, Y Liu, L Sun, RW Li, ST Pantelides, “2D nanovaristors at grain boundaries account for memristive switching in polycrystalline BiFeO3, Adv. Electron. Mater. 1 (5) 2015.

[5] L. Pan, Y. Que, H. Chen, D. Wang, J. Li, C. Shen, W. Xiao, S. Du, H. Gao, and S. T. Pantelides, “Room-temperature, low-barrier boron doping of graphene”, Nano Lett., 15, 6464-6468, (2015).

[6] X. Lu, M. Utama, J. Lin, X. Lou, Y. Zhao, J. Zhang, S. T. Pantelides, W. Zhou, S. Quek, and W. Xiong, “Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by raman spectroscopy”, Adv. Mat., 27, 4502-4508, (2015).

[7] J. Lin, S. T. Pantelides, W. Zhou “Vacancy-induced formation and growth of inversion domains in transition-metal dichalcogenide monolayer”, ACS Nano, 9, 5189–5197 (2015).

[8] Y. S. Puzyrev, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors”, Applied Physics Lett., 106, 053505 (2015).

[9] X. Shen, S. Dhar, and S. T. Pantelides, “Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices”, Appl. Physics Lett, 106, 143504, (2015).

[10] Y. Zhang, R. Mishra, T. J. Pennycook, A. Y. Borisevich, S. J. Pennycook, and S. T. Pantelides, “Oxygen disorder, a way to accommodate large epitaxial
strains in oxides”, Adv. Mat. Interfaces, published online Sept. 22, 2015.

[11] S. J. Pennycook, W. Zhou, and S. T. Pantelides, “Watching atoms work: Nanocluster structure and dynamics”, ACS Nano, 10, 9437-9440 (2015).

[12] J. Hachtel, R. Sachan, R. Mishra, and S. T. Pantelides, “Quantitative first-principles theory of interface absorption in multilayer heterostructures”, Appl. Phys. Lett., 107, 091908, (2015).

[11] Q. Qiao, Y. Zhang, R. Contreras-Guerrero, R. Droopad, S. T. Pantelides, S. J. Pennycook, S. Ogut, and R. F. Klie, “Direct observation of oxygen vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs”, App. Physics Lett., 107, 201604 (2015).

[12] Y. Zhang, R. Mishra, T. J. Pennycook, A. Y. Borisevich, S. J. Pennycook, and S. T. Pantelides, “Oxygen disordr, a way to accommodate large epitaxial strains in oxides”, Adv. Mater. Interf., published online Sept. 23, 2015.

[13] X. Shen, Y. Puzyrev, D. Fleetwood, R. Schrimpf, and S. T. Pantelides, “Quantum mechanical modeling of radiation-induced defect dynamics in electronic devices”, IEEE Trans. on Nuc. Sci., 5, 2169-2180, (2015).

[14] M. Kapetanakis, W. Zhou, M. Oxley, J. Lee, M. Prange, S. Pennycook, J.C. Idrobo and S. T. Pantelides, “Low-loss electron energy loss spectroscopy: An atomic-resolution complement to optical spectroscopies and application to graphene”, Phys. Rev. B, 92, 125147, (2015).

[15] J.A. Hachtel, C. Marvinney, A. Mouti, D. Mayo, R. Mu, S. J. Pennycook, A. R. Lupini, M. F. Chisholm, R. F. Haglund, and S. T. Pantelides, “Probing plasmons in three dimensions by combining complementary spectroscopies in a scanning transmission electron microscope, under review by Adv. Opt. Mater.

[16] X. Shen, T. J. Pennycook, D. Hernandez-Martin, A. Perez, M. Varela, Y. S. Puzyrev, C. Leon, Z. Sefrioui, J. Santamaria, and S. T. Pantelides, “High on/off ratio memristive switching of manganite-cuprate bilayer by interfacial magntoelectricity”, under review by Adv. Mater. Interf.

[15] S. Yu, J. Hachtel, M. Chisholm, S. T. Pantelides, L. Laromaine, and A. Roig, “Magnetic gold nanotriangles by microwave-assisted polyol synthesis”, Nanoscale, 7, 14039-14046, (2015).

[16] G. Duan, J. Hatchel, X. Shen, E.X. Zhang, C. X. Zhang, B. Tuttle, D. Fleetwood, R. Schrimpf, R. Reed, J. Franco, D. Linten, J. Mitard, L. Witters, N. Collaert, M. Chisholm, and S. T. Pantelides, “Activation energies for oxide- and interface-trap charge generation due to negative-bias temperature stress of Si-capped SiGe-pMOSFETs”, IEEE Trans. on Dev. and Mat. Rel., 15, 352-358, (2015).

[18] G. Barmparis, Y. Puzyrev, X.-G. Zhang, and S. T. Pantelides, “Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections”, PRB, 92, 214111, (2015).

[19] J. Pan, S. Du, Y. Zhang, L. Pan, Y. Zhang, H.-J. Gao, and S. T. Pantelides, “Ferromagnetism and perfect spin filtering in transition-metal-doped in graphyne nanoribbons”, PRB, 92, 205429, (2015).

[20] B. Tuttle, S. Alhassan, and S. T. Pantelides, “Large excitonic effects in group-IV sulfide monolayers”, PRB, 92, 235405, (2015).

[21] C. Leon, M. Frechero, M. Rocci, G. Sanchez-Santolino, A. Kumar, J. Salafranca, R. Schmidt, M. Diaz-Guillen, O. Dura, A. Rivera-Calzada, R. Mishra, S. Jesse, S. Kalinin, M. Varela, S. Pennycook, J.Santamaria, and S. T. Pantelides, “Paving the way to nanoionics: atomic origin of barriers for ionic transport through interfaces”, Scientific Reports, 5, 17229, (2015).

2014

[1] J. Lee, Z. Q. Yang, W. Zhou, S. J. Pennycook, S. T. Pantelides, M. F. Chisholm, “Stabilization of graphene nanopore”, PNAS, 111, 7522-7526 (2014).

[2] Y.-M. Kim, A. Morozovska, E. Eliseev, M. P. Oxley, R. Mishra, S. M Selbach, T. Grande, S. T. Pantelides, S. V. Kalinin, A. Y. Borisevich, “Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1-xMnO3 interface”, Nature Mat., 13, 1019-1025 (2014).

[3] J. H. Lin, O. Cretu, W. Zhou, K. Suenaga, D. Prasai, K. I. Bolotin, N. T. Cuong, M. Otani, S. Okada, A. R. Lupini, J. C. Idrobo, D. Caudel, A.Burger, N. J. Ghimire, J. Q. Yan, D. G. Mandrus, S. J. Pennycook, S. T. Pantelides, “Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers”, Nature Nanotech., 9, 436-442, (2014).

[4] N. Biškup, J. Salafranca, V. Mehta, M. P. Oxley , Y. Suzuki, S. J. Pennycook, S. T. Pantelides and M. Varela, “Insulating ferromagnetic LaCoO3-δ films: a phase induced by ordering of oxygen vacancies”, Phys. Rev. Lett. 112, 087202 (2014).

[5] R. Ishikawa, R. Mishra, A. R. Lupini, S. D. Findlay, T. Taniguchi, S. T. Pantelides, S. J. Pennycook, “Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch” Phys. Rev. Lett., 113, 155501 (2014).

[6] Y. J. Gong, Z. Liu, A. R. Lupini, G. Shi, J. H. Lin, S. Najmaei, Z. Lin, A. L. Elias, A. Berkdemir, G. You, H. Terrones, M. Terrones, R. Vajtai, S. T. Pantelides, S. J. Pennycook, J. Lou, W. Zhou, P. M. Ajayan, “Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide”, Nano Lett., 14, 442-449 (2014).

[7] X. Lu, M. I. B. Utama, J. H. Lin, X. Gong, J. Zhang, Y. Y. Zhao, S. T. Pantelides, J. X. Wang, Z. L. Dong, Z. Liu, W. Zhou, Q. H. Xiong, “Large-area synthesis of monolayer and few-layer MoSe2 Films on SiO2 substrates”, Nano Lett., 14, 2419-2425 (2014).

[8] R. Mishra, Y. M. Kim, J. Salafranca, S. K. Kim, S. H. Chang, A. Bhattacharya, D. D. Fong, S. J. Pennycook, S. T. Pantelides, A. Y. Borisevich, “Oxygen-vacancy-induced polar behavior in (LaFeO3)(2)(SrFeO3) superlattices”, Nano Lett., 14, 2694-2701 (2014).

[9] F. J. Nelson, J. C. Idrobo, J. D. Fite, Z. L. Miskovic, S. J. Pennycook, S. T. Pantelides, J. U. Lee, A. C. Diebold, “Electronic excitations in graphene in the 1-50 eV range: The pi and pi plus sigma peaks are not plasmons”, Nano Lett., 14, 3827-3831, (2014).

[10] J. D. Ren, H. M. Guo, J. B. Pan, Y. Y. Zhang, X. Wu, H. G. Luo, S. X. Du, S. T. Pantelides, H. J. Gao, “Kondo effect of cobalt adatoms on a graphene monolayer controlled by substrate-induced ripples”, Nano Lett. 14, 4011-4015,(2014).

[11] K. Appavoo, B. Wang, N. F. Brady, M. Seo, J. Nag, R. P. Prasankumar, D. J. Hilton, S. T. Pantelides, R. F. Haglund, Jr., “Ultrafast phase transition via catastrophic phonon collapse driven by plasmonic hot-electron injection”, Nano. Lett., 14, 1127-1133 (2014).

[12] Y. Puzyrev, S. Mukherjee, J. Chen, T. Roy, M. Silvestri, R. D. Schrimpf, D. M. Fleetwood, J. Singh, J. M. Hinckley, A. Paccagnella, S. T. Pantelides, “Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs”, IEEE Trans. Electron Dev., 61, 1316-1320 (2014).

[13] K. H. Warnick, B. Wang, S. T. Pantelides, “Hydrogen dynamics and metallic phase stabilization in VO2”, Appl. Phys. Lett., 104, 101913 (2014).

[14] L. Tsetseris, B. Wang, S. T. Pantelides, “Substitutional doping of graphene: The role of carbon divacancies”, Phys. Rev. B., 89, 035411 (2014).

[15] Y. Xu, X. Zhu, H. D. Lee, C. Xu, S. M. Shubeita, A. C. Ahyi, Y. Sharma, J. R. Williams, W. Lu, S. Ceesay, B. R. Tuttle, A. Wan, S. T. Pantelides, T. Gustafsson, E. L. Garfunkel, L. C. Feldman, “Atomic state and characterization of nitrogen at the SiC/SiO2 interface” J. Appl. Phys., 115, 033502 (2014).

[16] L. Tsetseris and S. T. Pantelides, “Graphene – an impermeable or selectively permeable membrane to atomic species?”, Carbon, 67, 58-63 (2014).

[17] A. R. Klots, A.K.M. Newaz, B. Wang, D. Prasai, H. Krzyzanowska, J.H. Lin, D. Caudel, N. J. Ghimire, J. Yan, B. L. Ivanov, K. A. Velizhanin, A. Burger, D. G. Mandrus, N. H. Tolk, S. T. Pantelides, K. I. Bolotin, “Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy”, Scientific Reports, 4, 6608, (2014).

[18] Z. Q. Yang, L. C. Yin, J. Lee, W. C. Ren, H. M. Cheng, H.Q. Ye, S. T. Pantelides, S. J. Pennycook, M. F. Chisholm, “Direct observation of atomic dynamics and silicon doping at a topological defect in grapheme”, Angewandte Chemie-International Edition 53, 8908-8912, (2014).

[19] M. P. Oxley, M. D. Kapetanakis, M. P. Prange, M. Varela, S. J. Pennycook, S. T. Pantelides, “Simulation of probe position-dependent electron energy-loss fine structure” Microscopy and Microanalysis, 20, 784-797, (2014).

[20] D. M. Fleetwood, E. X. Zhang, X. Shen, C. X. Zhang, R. D. Schrimpf, S. T. Pantelides, “Bias-temperature instabilities in silicon carbide MOS devices”, edited by T. Grasser, (Springer, Vienna, 2014).

[21] G. X. Duan, C. X. Zhang, E. X. Zhang, J. Hachtel, D. M. Fleetwood, R. D. Schrimpf, R. A. Reed, M. L. Alles, S. T. Pantelides, G. Bersuker, C. D. Young, “Bias dependence of total ionizing dose effects inSiGe- MOS FinFETs”, IEEE Trans. Nucl. Sci., 61, 2834-2838, (2014).

[22] C. X. Zhang, A. K. M. Newaz, B. Wang, E. X. Zhang, G. X. Duan, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, K. I. Bolotin, S. T. Pantelides, “Electrical stress and total ionizing dose effects on MoS transistors”, IEEE Trans. Nucl. Sci., 61, 2862-2867, (2014).

[23] C. X. Zhang, B. Wang, G. X. Duan, E. X. Zhang, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, A. P. Rooney, E. Khestanova, G. Auton, R. V. Gorbachev, S. J. Haigh, S. T. Pantelides, “Total Ionizing Dose Effects on h-BN Encapsulated Graphene Devices”, IEEE Trans. Nucl. Sci., 61, 2868-2873, (2014).

2013

 

[1]        J. Chen, Y. S. Puzyrev, C. X. Zhang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, “Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4080-4086, Dec 2013.

[2]        J. H. Lin, W. D. He, S. Vilayurganapathy, S. J. Peppernick, B. Wang, S. Palepu, M. Remec, W. P. Hess, A. B. Hmelo, S. T. Pantelides, and J. H. Dickerson, “Growth of Solid and Hollow Gold Particles through the Thermal Annealing of Nanoscale Patterned Thin Films,” Acs Applied Materials & Interfaces, vol. 5, pp. 11590-11596, Nov 2013.

[3]        B. Wang, Y. S. Puzyrev, and S. T. Pantelides, “Enhanced chemical reactions of oxygen at grain boundaries in polycrystalline graphene,” Polyhedron, vol. 64, pp. 158-162, Nov 2013.

[4]        R. Mishra, W. Zhou, S. J. Pennycook, S. T. Pantelides, and J. C. Idrobo, “Long-range ferromagnetic ordering in manganese-doped two-dimensional dichalcogenides,” Physical Review B, vol. 88, Oct 2013.

[5]        B. R. Tuttle, T. Aichinger, P. M. Lenahan, and S. T. Pantelides, “Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes,” Journal of Applied Physics, vol. 114, Sep 2013.

[6]        X. Shen, Y. S. Puzyrev, and S. T. Pantelides, “Vacancy breathing by grain boundaries-a mechanism of memristive switching in polycrystalline oxides,” Mrs Communications, vol. 3, pp. 167-170, Sep 2013.

[7]        H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, “Bandgap Engineering of Strained Monolayer and Bilayer MoS2,” Nano Letters, vol. 13, pp. 3626-3630, Aug 2013.

[8]        X. Shen, B. R. Tuttle, and S. T. Pantelides, “Competing atomic and molecular mechanisms of thermal oxidation-SiC versus Si,” Journal of Applied Physics, vol. 114, Jul 2013.

[9]        F. M. Steel, B. R. Tuttle, X. Shen, and S. T. Pantelides, “Effects of strain on the electrical properties of silicon carbide,” Journal of Applied Physics, vol. 114, Jul 2013.

[10]      J. H. Lin, W. J. Fang, W. Zhou, A. R. Lupini, J. C. Idrobo, J. Kong, S. J. Pennycook, and S. T. Pantelides, “AC/AB Stacking Boundaries in Bilayer Graphene,” Nano Letters, vol. 13, pp. 3262-3268, Jul 2013.

[11]      C. X. Zhang, X. Shen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. A. Francis, T. Roy, S. Dhar, S. H. Ryu, and S. T. Pantelides, “Temperature Dependence and Postirradiation Annealing Response of the 1/f Noise of 4H-SiC MOSFETs,” Ieee Transactions on Electron Devices, vol. 60, pp. 2361-2367, Jul 2013.

[12]      J. Lee, W. Zhou, S. J. Pennycook, J. C. Idrobo, and S. T. Pantelides, “Direct visualization of reversible dynamics in a Si-6 cluster embedded in a graphene pore,” Nature Communications, vol. 4, Apr 2013.

[13]      B. R. Tuttle, X. Shen, and S. T. Pantelides, “Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices,” Applied Physics Letters, vol. 102, Mar 2013.

[14]      K. H. Warnick, B. Wang, D. E. Ciffel, D. W. Wright, R. F. Haglund, and S. T. Pantelides, “Room-Temperature Reactions for Self-Cleaning Molecular Nanosensors,” Nano Letters, vol. 13, pp. 798-802, Feb 2013.

[15]      X. Shen and S. T. Pantelides, “Atomic-Scale Mechanism of Efficient Hydrogen Evolution at SiC Nanocrystal Electrodes,” Journal of Physical Chemistry Letters, vol. 4, pp. 100-104, Jan 2013.

[16]      Z. Jarrahi, Y. H. Cao, T. Hong, Y. S. Puzyrev, B. Wang, J. H. Lin, A. H. Huffstutter, S. T. Pantelides, and Y. Q. Xu, “Enhanced photoresponse in curled graphene ribbons,” Nanoscale, vol. 5, pp. 12206-12211, 2013.

[17]      B. Wang, L. Tsetseris, and S. T. Pantelides, “Introduction of nitrogen with controllable configuration into graphene via vacancies and edges,” Journal of Materials Chemistry A, vol. 1, pp. 14927-14934, 2013.

[18]      S. T. Pantelides, “The role of extended defects in device degradation,” Physica Status Solidi a-Applications and Materials Science, vol. 210, pp. 175-180, Jan 2013.

[19]      C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, X. Shen, and S. T. Pantelides, “Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs,” Ieee Electron Device Letters, vol. 34, pp. 117-119, Jan 2013.


2012

  1. P. Yu, W. Luo, D. Yi, J. X. Zhang, M. D. Rossell, C. H. Yang, L. You, G. Singh-Bhalla, S. Y. Yang, Q. He, Q. M. Ramasse, R. Erni, L. W. Martin, Y. H. Chu, S. T. Pantelides, S. J. Pennycook, and R. Ramesh, “Interface control of bulk ferroelectric polarization”, Proc. Natl. Acad. Sci. U. S. A. 109, 9710-9715 (2012).
  2. W. Zhou, J. Lee, J. Nanda, S. T. Pantelides, S. J. Pennycook, and J. C. Idrobo,”Atomically localized plasmon enhancement in monolayer graphene”, Nature Nanotech. 7, 161-165 (2012).
  3. Y. M. Kim, J. he, M. D. Biegalski, H. Ambaye, V. Lauter, H. M. Christen, S. T. Pantelides, S. J. Pennycook, S. V. Kalinin, and A. Y. Borisevich, “Probing oxygen vacancy concentration and homogeneity in solid-state fuel-cell cathode materials on the subunit-cell level”, Nature Mater. 11, 888-894 (2012).
  4. A. K. M. Newaz, Y. S. Puzyrev, B. Wang, S. T. Pantelides, and K. Bolotin, “Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment”,  Nature Commun. 3, 734 (2012).
  5. J. Seidel, W. Luo, S. J. Suresha, P. K. Nguyen, A. S. Lee, S. Y. Kim, C. H. Yang, S. J. Pennyccok, S. T. Pantelides, J. F. Scott, and R. Ramesh, “Prominent electrochromism through vacancy-order melting in a complex oxide”, Nature Comm. 3, 799 (2012).
  6. X. G. Zhang and S. T. Pantelides, “Theory of charge limited currents”, Phys. Rev. Lett. 108, 266602 (2012).
  7. M. D. Rossell, R. Emi, M. P. Prnage, J. C. Idrobo, W. Luo, R. J. Zeches, S. T. Pantelides, and R. Ramesh, “Atomic structure of highly stained BiFeO3 thin films”, Phys. Rev. Lett. 108, 047601 (2012).
  8. R. F. Klie, Q. Qiao, T. Paulauskas, A. Gulec, A. rebola, S. Ogut, M. P. Prnage, J. C. Idrobo, S. T. Pantleides, S. Kolesnik, B. Dabrowski, M. Ozdemir, C. Boyraz, D. Mazumdar, and A. Gupta, “Observations of Co4+ in a higher spin state and the increase in the Seebeck coefficient of thermoelectric Ca3Co409“, Phys. Rev. Lett. 108, 196601 (2012).
  9. W. Zhou, M. D. Kapetanakis, M. P. Prange, S. T. Pantelides, S. J. Pennycook, and J.-C. Idrobo, “Direct Determination of the Chemical Bonding of Individual Impurities in Graphene”, Phys. Rev. Lett. 109, 206803, (2012).
  10. M. P. Prange, M. P. Oxley, SM. Varela, S. J. Pennycook, and S. T. Pantelides, “Simulation of Spatially-Resolved Electron Energy Loss Near-Edge Structure for Scanning Transmission Electron Microscopy”, Phys. Rev. Lett., 109, 246101 (2012).
  11. K. Appavoo, D. Y. Lei, Y. Sonnefraud, B. Wang, S. T. Pantelides, S. A. maier, and R. F. Haglund, “Role of defects in the phase transition of VO2 nanoparticles proberd by plasmon resonance spectrscopy”, Nano Lett. 12, 780-786 (2012).
  12. J. Salafranca, J. Gazquez, N. Perez, A. Labarta, S. T. Pantelides, S. J. Pennycook, X. Batlle, and M. varela, “Surfactant organic molecules restore magnetism in metal-oxide nanoparticle surfaces”, Nano Lett. 12, 2499-2503 (2012).
  13. T. J. Pennycook, J. R. McBride, S. J. Rosenthal, S. J. Pennycook, and S. T. Pantelides, “Dynamic fluctuations in ultrasmall nanocrystals induce white light emission”, Nano Lett. 12, 3038-3042 (2012).
  14. J. Lee, S. J. Pennycook, and S. T. Pantelides, “Simultaneous enhancement of electronic and Li+ ion conductivity in LiFePO”. Appl. Phys. Lett. 101, 033901 (2012).
  15. E. X. Zhang, A. K. M. Newaz, B. Wang, C. X. Zhang, D. M. Fleetwood, K. Bolotin, R. D. Schrimpf, S. T. Pantelides, and M. L. Alles, “Ozone-exposure effects on graphene-on-SiO2 transistors”, Appl. Phys. Lett. 101, 121601 (2012).
  16. L. Tsetseris and S. T. Pantleides, “Molecular doping of graphene with ammonium groups”, Phys. Rev. B, 85, 155446 (2012).
  17. S. Bubin, B. Wang, S. T. Pantelides, and K. Varga, “Simulation of high-energy ion collisions with graphene fragments”, Phys. Rev. B 85, 235435 (2012).
  18. B. Wang and S. T. Pantelides, “Magnetic moment of a single vacancy in graphene and semiconducting nanoribbons”, Phys. Rev. B 86, 165438 (2012).
  19. A. Y. Borisevich, A. R. Lupini, J. He, E. A. Eliseev, A. N. Morozovska, G. S. Svechnikov, P. Yu, Y. H. Chu, R. ramesh, S. T. Pantelides, S. V. Kalinin, and S. J. Pennycook, “Interface dipole between two metallic oxides caused by localized oxygen vacancies”, Phys. Rev. B 86, 140102 (2012).
  20. E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, X. Shen, and S. T. Pantleides, “Bias-temperature instabilities in 4H-SiC metal-oxide-semiconductor capacitors”, IEEE Trans. Dev. and Mater. Reliab. 12, 391-398 (2012).
  21. N. L. Rowsey, M. E. Law, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, and S. T. Pantelides, “Radiation-induced oxide charge in low-and-high-H2 environments”, IEEE Trans. on Nucl. Sci. 59, 755-759 (2012).
  22. V. Ramachandran,  R. A. Reed, R. D. Schrimpf, D. McMorrow, J. D. Boos, M. P. King, E. X. Zhang, G. Vizkelethy, X. Shen, and S. T. Pantelides, “Single-event transient sensitivity of InAlSb/InAs/AlGaSb high electron mobility transistors”, IEEE Trans. on Nucl. Sci.  59, 2691-2696 (2012).
  23. Y. S. Puzyrev, B. Wang, E. X. zhang, C. X. Zhang, A.K.M. Newaz, K. I. Bolotin, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Surface reactions and defect formation in irradiated graphene devices”, IEEE Trans. on Nucl. Sci. 59, 3039-3044 (2012).
  24. N. L. Rowsey, M. E. Law, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, and S. T. Pantelides, “Mechanisms separating time-dependent and true dose-rate effects in irradiated bipolar oxides”, IEEE Trans. on Nucl. Sci. 59, 3069-3076 (2012).
  25. D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, N. L. Rowsey, M. E. Law, B. R. Tuttle, and S. T. Pantelides, “The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing”, IEEE Trans. on Nucl. Sci. 59, 3087-3092 (2012).
  26. L. Tsetseris and S. T. Pantelides, “Hydrogen uptake by graphene and nucleation of graphene”, Journal of Mat. Sci. 47, (special issue), 7571-7579 (2012).
  27. Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, X. Shen, S. T. Pantelides, X. Zhu, L. C. Feldman, J. Rozen, and J. R. Williams, “Phosphorous passivation of the SiO2/4H-SiC interface”, Solid-State Electron. 68, 103-107 (2012).
  28. S. T. Pantelides, Y. Puzyrev, X. Shen, T. Roy, S. DasGupta, B. R. Tuttle, D. M. Fleetwood, and R. D. Schrimpf, “Reliability of III-V devices: The defects that cause the trouble”, Microelectron. Eng. 90, 3-8 (2012).
  29. W. D. He, J. H. Lin, B. Wang, S. Q. Tuo, S. T. Pantelides, and J. H. Dickerson, “An analytical expression for the van der Waals interaction in oriented-attachement growth: a spherical nanoparticle and a growing cylindrical nanorod”, Phys. Chem. Chem. Phys. 14, 4548-4553 (2012).
  30. S. T. Pantelides, Y. Puzyrev, L. Tsetseris, and B. Wang, “Defects and doping and their role in functionalyzing graphene”, MRS Bulletin 37, 1187 (2012).

2011

  1. J. W. Lee, W. Zhou, J. C. Idrobo,S. J. Pennycook, and S. T. Pantelides, “Vacancy-Driven Anisotropic Defect Distribution in the Battery-Cathode Material LiFePO(4)”, Phys. Rev. Lett. 107 (2011).
  2. J. Gazquez, W. D. Luo, M. P. Oxley, M. Prange, M. A. Torija, M. Sharma, C. Leighton, S. T. Pantelides, S. J. Pennycook, and M. Varela, “Atomic-Resolution Imaging of Spin-State Superlattices in Nanopockets within Cobaltite Thin Films”, Nano Lett. 11, 973-976 (2011).
  3. X. Shen and S. T. Pantelides, “Identification of a major cause of endemically poor mobilities in SiC/SiO(2) structures”, Appl. Phys. Lett. 98, 053507 (2011).
  4. X. A. Shen, E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, and S. T. Pantelides, “Atomic-scale origins of bias-temperature instabilities in SiC-SiO(2) structures”, Appl. Phys. Lett. 98, 063507 (2011).
  5. L. Tsetseris and S. T. Pantelides, “Graphene nano-ribbon formation through hydrogen-induced unzipping of carbon nanotubes”, Appl. Phys. Lett. 99, 143119 (2011).
  6. B. Wang and S. T. Pantelides, “Controllable healing of defects and nitrogen doping of graphene by CO and NO molecules”, Phys. Rev. B 83, 245403 (2011).
  7. L. Tsetseris and S. T. Pantelides, “Intermolecular bridges and carrier traps in defective C(60) crystals”, Phys. Rev. B 84, 195202 (2011).
  8. B. R. Tuttle, S. Dhar, S. H. Ryu, X. Zhu, J. R. Williams, L. C. Feldman, and S. T. Pantelides, “High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors”, Jour. Appl. Phys. 109, 023702 (2011).
  9. Y.S.Puzyrev, T.Roy, M.Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors”, Jour. Appl. Phys. 109, 034501 (2011).
  10. L. Tsetseris and S. T. Pantelides, “Defect formation and hysterectic inter-tube displacement in multi-wall carbon nanotubes”,      Carbon 49, 581-586 (2011).
  11. B. Wang, Y. S. Puzyrev, and S. T. Pantelides, “Strain enhanced defect reactivity at grain boundaries in polycrystalline graphene”, Carbon 49, 3983-3988 (2011).
  12. T. Roy, Y. S. Puzyrev, E. X. Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, “1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH(3)-rich conditions”, Microelectr. Reliability 51, 212-216 (2011).
  13. S. DasGupta, X. Shen, R. D. Schrimpf, R. A. Reed, S.T. Pantelides, D. M. Fleetwood, J. I. Bergman, and B. Brar, “Degradation in InAs-AlSb HEMTs Under Hot-Carrier Stress”, IEEE Trans. Electron Devices 58, 1499-1507 (2011).
  14. L. Tsetseris and S. T. Pantelides, “Defect-related hysteresis in nanotube-based nano-electromechanical systems”, Nanoscale Research Lett. 6, 245 (2011).
  15. E. Golias, L. Tsetseris, A. Dimoulas, and S. T. Pantelides, “Ge volatilization products in high-k gate dielectrics”, Microelectron. Engin. 88, 427-430 (2011).
  16. L. Tsetseris and S. T. Pantelides, ” Defect formation and annihilation at Ge-GeO(2) interfaces”, Microelectron. Engineering 88, 395-398 (2011).
  17. R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, R. A. G. Lucovsky, and S. T. Pantelides, “Radiation effects in new materials for nano-devices (invited)”, Microelectron. Engineering 88, 1259-1264 (2011).
  18. B. Wang, D. Wright, D. Cliffel, R. Haglund, and S. T. Pantelides, “Ionization-Enhanced Decomposition of 2,4,6-Trinitrotoluene (TNT) Molecules”, Journ. Phys. Chem. 115, 8142-8146 (2011).
  19. T. J. Pennycook, M. P. Oxley, J. Garcia-Barriocanal, F. Y. Bruno, C. Leon, J Santamaria, S. T. Pantelides, M. Varela, and S. J. Pennycook, “Seeing oxygen disorder in YSZ/SrTiO(3) colossal ionic conductor heterostructures using EELS”, European Physical Journal- Applied Physics 54, 33507 (2011).
  20. Jia-An Yan, J. A. Driscoll, B. K. Wyatt, K. Varga, and S. T. Pantelides,”Time-domain simulation of electron diffraction in crystals” Phys. Rev. B, (2011).

2010

  1. Ondrej Krivanek, Matthew F. Chisholm, Valeria Nicolosi, T. J. Pennycook, George J. Corbin, Niklas Dellby, Matthew F. Murfitt, Christopher S. Own, Zoltan S. Szilagyi, Mark P. Oxley, S. T. Pantelides, and Stephen J. Pennycook, “Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy”, Nature 464, 571-574 (2010).
  2. Timothy J. Pennycook, Matthew J. Beck, Kalman Varga, Maria Varela, Stephen J. Pennycook, and S. T. Pantelides, “Origin of colossal ionic conductivity in oxide multilayers: interface induced sublattice disorder”, Phys. Rev. Lett. 104, 115901 (2010).
  3. J. He, A. Borisevich, S. V. Kalinin, S. J. Pennycool, and S. T. Pantelides, “Control of octahedral tilts and magnetic properties of perovskite oxide heterostructures by substrate symmetry”, Phys. Rev. Lett. 105, 227203 (2010).
  4. M. F. Chisolm, W. D. Luo, M. P. Oxley, S. T. Pantelides, and H. N. Lee. “Atomic-scale compensation phenomena at polar inerfaces”, Phys. Rev. Lett. 105, 197602 (2010).
  5. N. Jiang, NY. Y. Zhang, Q. Liu, Z. H. Cheng, Z. T. Deng, S. X. Du, H. –J. Gao, M. J. Beck and S. T. Pantelides, “Diffusivity control in molecule-on-metal systems using electric fields”, Nano Lett. 10, 1184-1188 (2010).
  6. N. Jiang, Y. Y. Zhang, Q. Liu, Z. H. Cheng, Z. T. Deng, S. X. Du, H. J. Gao, M. J. Beck, and S. T. Pantelides, “Diffusity control in molecule-on-metal systems using electric fields”, Nano Lett. 10, 1184-1188 (2010).
  7. T. Roy, Y. S. Puzyrev, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, D. F. Brown, U. K. Mishra, and S. T. Pantleides, “Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions”, Appl. Phys. Lett. 96, 133503 (2010).
  8. Y. S. Puzyrev, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors”, Appl. Phys. Lett. 96, 053505 (2010).
  9. L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Hydrogen-dopant interactions in SiGe and strained Si”, Appl. Phys. Lett. 96, 251905 (2010).
  10. X. A. Shen, E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Shrimpf, S. Dhar, S. H. ryu, and S. T. Pantelides, “Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures”, Appl. Phys. Lett. 98, 063507 (2010).
  11. J. Qi, J. A. Yan, JH. Park, A. Steigerwald, Y. Xu, S. N. Gilbert, X. Liu, J. K. Furdyna, S. T. Pantelides, and N. Tolk, “Mechanical and electronic properties of ferromagnetic Ga1-xMnxAs using ultrafast coherent acoustic phonons”, Phys. Rev. B 81, 115208 (2010).
  12. W. Walkosz, R. F. Klie, S. Ogut, B. Mikijelj, S. J. Pennycook, S. T. Pantelides, and J. C. Idrobo, “Crystal-induced effects at crystal/amorophous interfaces: the case for Si3N4/SiO2”, Phys. Rev. B 82, 081412 (2010).
  13. J. C. Idrobo and S. T. Pantelides, “Origon of bulklike optical response in noble-metal Ag and Au nanoparticles”, Phys. Rev. B 82, 085420 (2010).
  14. L. Tsetseris, and S. T. Pantelides, “Oxygen and water-related impurities in SiGe and strained Si”, Phys. Rev. B 82, 045201 (2010).
  15. J. Qi, J. A. Yan, H. Park, A. Steigerwald, Y. Xu, S. N. Gilbert, X. Liu, J. K. Furdyna, S. T. Pantelides, and N. Tolk, “Mechainical and electronic properties of ferromagnetic Ga 1-xMnxAs using ultrafast cohernet acoustic phonons”, Phys. Rev. B 81, 115208 (2010).
  16. T. J. Pennycook, G. Hadjisavvas, J. C. Idrobo, P. C. Kelires, and S. T. Pantelides, “Optical gaps of free and embedded Si nanoclusters: Density functional theory calculations”, Phys. Rev. B 82, 125310 (2010).
  17. X. Shen, S. Dasgupta, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Recoverable degradation in INAs/AlSb high-electron mobility transistors: the role of hot carriers and metastable defects in AlSb”, J. Appl. Phys. 108, 114505 (2010).
  18. X. Shen, M. P. Oxley, Y. S. Puzyrev, B. R. Tuttle, G. Duscher, and S. T. Pantelides, “ Excess carbon in silicon carbide”,  J. Appl. Physics 108, 123705 (2010).
  19. Y. S. Puzyrev, T. Toy, M. Beck, B. R. Tuttle, R. D. Shrimpf, D. M. Fleetwood, and S. T. Pantelides, “Dehydrogenation of defects and hot-electron degradation in GaN high-electron high-mobility transistors”, J. Appl. Phys. 109, 034501, (2010).
  20. B. R. Tuttle, D. R. hughart, R. D. Schrimpf, R. D. Schrimpf, D. M. Fleetood, and S. T. Pantelides, “Defect interactions of H-2 in SiO2: implications foe ELDRS and latent interface trap buildup”, IEEE Trans. Nucl. Sci. 57, 3046-3053 (2010).
  21. T. Roy, E. X. Zhang, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, A. B. Hmelo, and S. T. Pantelides, “Process dependence of proron-induced degradation in GaN HEMTs”, Ieee Trans. Nucl. Sci. 57, 3060-3065 (2010).
  22. S. T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisawas, I. G. batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, and R. D. Schrimpf,”Performance, reliability, radiation effects, and aging issues in microelectronics: from atomic-scale physics to engineering-level modeling”, Solid State Electron. 54, 841-848 (2010).
  23. L. Tsetseris, S. Logothetidis, and S. T. Pantelides, “Atomic-scale mechanisms for diffusion of impurities in transition-metal nitrides”, Surf. And Coatings Techn. 204, 2089-2094 (2010).

2009

  1. J. Tao, D. Niebieskikwiat, M. Varela, W. Luo, M. A. Schofield, Y. Zhu, M. B. Salamon, J. M. Zuo, S. T. Pantelides, and S. J. Pennycook,  “Direct imaging of nanoscale phase separation in La0.55Ca0.45MnO3: relationship to colossal magnetoresistance”, Phys. Rev. Lett. 103, 097202 (2009).
  2. X. G. Zhang and S. T. Pantelides, “Screening in nanowires and nanocontacts: field emission, adhesion force, and contact resistance”, Nano Lett. 9. 4306-4310 (2009).
  3. S. L. Teich-McGoldrick, M. Ballenger, M. Caussanel, L. Tsetseris, S. T. Pantelides, S. C. Glotzer, and R. D. Schrimpf, “Design considerations for CdTe nanotetrapods as electronic devices”, Nano Lett. 9, 3683-3688 (2009).
  4. O. D. Restrepo, K. Varga, and S. T. Panteldies,”Fist-principles calculations of electron mobilities in silicon: phinon and Coulomb scattering”, Appl. Phys. Letters 94, 212103 (2009).
  5. L. Tsetseris, S. Logotheteidis, and S. T. Pantelides, “Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN”, Appl. Phys. Lett. 94, 161903 (2009).
  6. L. Tsetseris and S. T. Pantelides, “Morphology and defect properties of the Ge-GeO2 interface”, Appl. Phys. Lett. 95, 262107 (2009).
  7. J. C. Idrobo, M. P. Oxley, W. Walkosz, R. F. Klie, S. Ogut, B. Mikijelj, S. J. Pennycook, and S. T. Pantelides,”Identification and lattice location of oxygen impurities in alpha-Si3N4”, Appl. Phys. Lett. 95, 164101 (2009).
  8. M. Varela, M. P. Oxley, W. Luo, J. Tao, M. Watanabe, A. R. Lupini, S. T. PantelidesS. J. Pennycook, “Atomic-resolution imaging of oxidation states in manganites”, Phys. Rev. B 79, 085117 (2009).
  9. B. R. Tuttle and S. T. Pantelides, “Vacancy-related defects and the E-delta (‘) center in amorphous silicon dioxide: density functional calculations”, Phys. Rev. B 79, 115208 (2009).
  10. J. C. Idrobo, A. Halabica, R. H. Magruder, R. F. Haglund. Jr.’ S. J. Pennycook, and S. T. Pantelides, “Universal optical response of Si-Si bonds and its eveolution from nanoparticles to bulk crystals”, Phys. Rev. B 79, 125322 (2009).
  11. M. J. Beck, and S. T. Pantelides, “Origin of  preferential sputtering in a-SiO2 during ion beam synthesis of nanocrystals”, Phys. Rev. B 79, 033203 (2009).
  12. W. D. Luo. M. Varela, J. Tao, S. J. Pennycook, and S. T. Pantelides, “Electronic and crystal-field effects in the fine structure of electron energy-loss spectra of manganites”, Phys. Rev. B79, 052405 (2009).
  13. J. Q. Lu, X. G. Zhang, and S. T. Pantelides, “Standing spin waves excited optically across an indirect gap in short graphene nanoribbons”, Phys. Rev. B (2009).
  14. A. Halabica, S. T. Pantelides, R. F. Haglund, R. H. Magruder, A. Meldrum, “Excitation and detection of surface acoustic phono modes in Au/Al2O3 multilayers”, Phys. Rev. B 80 (2009).
  15. R. Arora, J. Rozen, D. M. Fleetwood, K. F. Galloway, C. X. Zhang, J. S. Han, S. Dimitrijev, F. Kong, L. C.Feldman, S. T. Pantelides,  and R. D. Schrimpf, “Charge trapping properties of 3-Cand 4H-SiC MOS capacitors with nitrided gate oxides”, IEEE Tans. Nucl. Sci. 56, 3185-3191 (2009).
  16. M. J. Beck, Y. S. Puzyrev, N. Sergueev, K. Varga, R. D. schrimpf, D. M. Fleetwood, and S. T. Pantelides, “The role of atomic displacemets in ion-induced dielectric breakdown”, IEEE Trans. Nucl. Sci.56, 3210-3217, Part 1 (2009).
  17. D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, X. J. Chen, H. J. Barnaby, K. E. Holbert, R. L. Pease, D. G. Platteter, B. R. Tuttle, and S. T. Pantelides, “The effects of aging and hydrogen on the radiation response of gated lateral PNP Bipolar transistors”, IEEE Trans. Nucl. Sci. 3361-3366, Part 1 (2009).
  18. L. Tsetseris and S. T. Pantelides, “Adsorbate-induced defect formation and annihilation on graphene and single-walled carbon nanotubes”, J. Phys. Chem. B 113, 941-944 (2009).
  19. L. Tsetseris and S. T. Pantelides, “Adatom complexes and self-healing mechanisms on graphene and single-wall carbon nanotubes”, Carbon 47, 901-908 (2009).
  20. L. Tsetseris and S. T. Pantelides, “Modification of the electronic properties of rubrene crystals by water and oxygen-related species”, Org. Electron. 10, 333-340 (2009).
  21. L. Tsetseris and S. T. Pantelides, “First-principles studies on organic electronic materials”, Eur. Phys. J. Appl. Phys. 46, 12511 (2009).
  22. S. J.Pennycook, M. F. Chisholm, A. R. Lupini, M. Varela, A. Y. Borisevich, M. P. Oxley, W. D. Luo, K. van Benthem, S.-H Oh, D. L. Sales, S. I. Molina, J. Garcia-Barriocanal, C. Leon, J. Santamaria, S. N. Rashkeev, and S. T.  Pantelides, “Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to splving energy problems”, Phil. Trans. Royal Soc. A-Math. Phys. and Eng. Sci. 367, 3709-3733 (2009).

2008

  1. R. Hatcher, M. Beck, A. Tackett, and S. T. Pantelides, “Dynamical effects in the interaction of ion beams with solids”,  Phys. Rev. Lett. 100, 103201 (2008).
  2. I. G. Batyrev, B. Tuttle, D. M. Fleetwood, R. D. Schrimpf, L. Tsetseris, and S. T. Pantelides, “Reactions of water molecules in silica-based network glasses”, Phys. Rev. Lett. 100, 105503 (2008).
  3. B. R. Tuttle and S. T. Pantelides, comment on “Theory of defect levels and the ‘Band Gap Problem’ in silicon”, Phys. Rev. Lett. 101, 089701 (2008).
  4. M. J. Beck, R. D. Schrimpf, D. M. Fleetwood,  S. T. Pantelides, “Disorder-recrystallization effects in low-energy beam-solid interactions”, Phys. Rev. Lett., 100, 185502 (2008).
  5. Luo W., Pennycook, S. J., and Pantelides, S. T., “Magnetic ‘dead’ layer at a complex oxide surface”, Phys. Rev. Lett., 101, 247204 (2008).
  6. J. Rozen, J. Dhar, S. K. Dixit, V. V. Afanas’ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams, and L. C. Feldman, “Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface”, J. Appl. Phys. 103, 124513 (2008).
  7. S. H. Oh, K. van Benthem, S. I. Molina, A. Y. Borisevich, W. Luo,  P. Werner, N. D. Zakharov, S. T. Pantelides, and S. J. Pennycook, “Point defect configurations of supersaturated Au atoms inside Si nanowires,” Nano Lett. 8, 1016-1019 (2008).
  8. A. G. Marinopoulos, K. van Benthem, S. N. Rashkeev, S. J. Pennycook, and S. T. Pantelides, “Impurity segregation and ordering in Si-SiO2-HfO2 structures”, Phys. Rev. B 77, 195317 (2008).
  9. L. Tsetseris and S. T. Pantelides, “Large impurity effects in rubrene crystals: first-principles calculations”, Phys. Rev. B 78, 115205 (2008).
  10. L. Tsetseris, N. Kalfagiannis, S. Logothetidis, and S. T. Pantelides, “Trapping and release of impurities in TiN: a first-principles study”, Phys. Rev. B 78, 094111 (2008).
  11. K. G. Roberts, M. Varela, S. Rashkeev, S. T. Pantelides, S. J. Pennycook, and K. M. Krishnan, “Defect-mediated ferromagnetism in insulating Co-doped anatase TiO2 thin films”, Phys. Rev. B 78, 014409 (2008).
  12. A. Halabica, J. C. Idrobo, S. T. Pantelides, R. H. Magruder, S. J. Pennycook, R. F. Haglind, “Pulsed infrared laser annealing of gold nanopaticles embedded in a Si matrix”, Journ. Appl. Phys., 103, 083545 (2008).
  13. L. Tsetseris, N. Kalfagiannis, S. Logothetidis, and S. T. Pantelides, “Structure and interaction of point defects in transition-metal nitrides”, Phys. Rev. B 76, 224107 (2008).
  14. R. D. Schrimpf, K. M. Warren, D. R. Ball, R. A. Weller, R. A. Reed, D. M. Fleetwood, L. W. Massengill, M. H. Mendenhall, S. N. Rashkkev, S. T. Pantelides, and M. A. Alles, “Muti-scale simulation of radiation effects in electronic devices”, IEEE Trans. Nucl. Sci. 55, 1891-1092 (2008).
  15. I. G. Batyrev, D. M. Fleetwod, R. D. Schrimpf, and S. T. Pantelides, “The role of water in the radiation response of wet and dry oxides”, IEEE Trans. Nucl. Sci. 55, 2085-2089 (2008).
  16. M. J. Beck, R. Hatcher, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Quantum mechanical description of displacement damage formation”, IEEE Trans. Nucl. Sci. 54, 1906-1912 (2008).
  17. D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, R. L. Pease, and G. W. Dunham , “The electron capture, hydrogen release, and enhanced gain degradation in linear bipolar devices”, IEEE Trans. Nucl. Science 55, 2986-2991 (2008).
  18. M. J. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood and  S. T. Pantelides, “Atomic displacement effects in single-event gap rupture”, IEEE Tans. Nucl. Sci. 55, 3025-3031 (2008).
  19. X. J. Chen, H. J. Barnaby, B. Vertneire, K. E. Holbert, D. Wright, R. L. Pease, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, M. R. Shaneyfelt, and P. Adell, “Post-irradiation annealing mechanisms of defects generated in hydrogenated bipolar oxides”, IEEE Trans. Nucl. Sci. 55, 3032-3038 (2008).
  20. I. G. Batyrev, D. Hughart, R. Durand, M. Bounasser, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, S. N. Rashkeev, G. W.  Dunham, M. E. Law, and S. T.  Pantelides, “Effects of hydrogen on the radiation response of bipolar transistors: experiment and modeling”, IEEE Trans. Nucl. Sci. 55, 3039-3045 (2008).
  21. J. R. Schwank, M. R. Shaneyfelt, A. Dasguota,  S. A. Francis, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, P. E. Dodd, V. Ferlet-Cavrois, P. Paillet, S. M.Dalton , S. E. Swanson., G. L. Hash, S. M. Thornberg., J. M. Hochrein, and G. K. Lum,“Effects of moisture and hydrogen exposure on radiation-induced MOS device degradation and its implications for long-term aging”, IEEE Trans. Nucl. Sci. 55, 3206-3215 (2008).
  22. L. Tsetseris, X. J. Zhou, D. M. Fleetwod, R. D. Schrimpf, and S. T. Pantelides, “Hydrogen-related instabilities in MOS devices under bias temperature stress”, IEEE Trans. Dev. Mat. Reliab. 7, 502-508 (2008).
  23. S. J. Pennycook, K. van Benthem, M. P Oxley, S. N. Rashkeev, and S. T. Pantelides, “From 3-D imaging of atoms to macroscopic device properties”, Microsc. and Microanal. 13, 82-83 (2008).
  24. M. Varela, M. P. Oxley, K. G. Roberts, J. Garcia-Barriocanal, A. R. Lupini, S. N. Rashkeev, C. Leon, K. M. Krishnan, J. Santamaria, S. T. Pantelides, and S. J. Pennycook, “Spectroscopic imaging of oxide interfaces with aberration corrected probes”, Microsc. and Microanal. 13, 142-143 (2008).
  25. S. T. Pantelides, Z.-Y. Lu, C. Nicklaw, T. Bakos, and S. N. Rashkeev, “The E’ center and oxygen vacancies in SiO2”, J. Non-Cryst. Solids, 354, 217-223 (2008).

 

2 Responses to Recent Publications

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    May 31, 2017 at 12:54 pm

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  2. tin nong trong ngay says:
    August 12, 2016 at 5:07 am

    It’s nearly impossible to find experienced people
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