Recent Publications

2014

[1]        Y. Xu, X. Zhu, H. D. Lee, C. Xu, S. M. Shubeita, A. C. Ahyi, Y. Sharma, J. R. Williams, W. Lu, S. Ceesay, B. R. Tuttle, A. Wan, S. T. Pantelides, T. Gustafsson, E. L. Garfunkel, and L. C. Feldman, “Atomic state and characterization of nitrogen at the SiC/SiO2 interface,” Journal of Applied Physics, vol. 115, Jan 2014.

[2]        L. Tsetseris, B. Wang, and S. T. Pantelides, “Substitutional doping of graphene: The role of carbon divacancies,” Physical Review B, vol. 89, Jan 2014.

[3]        L. Tsetseris and S. T. Pantelides, “Graphene: An impermeable or selectively permeable membrane for atomic species?,” Carbon, vol. 67, pp. 58-63, Feb 2014.

[4]        Y. J. Gong, Z. Liu, A. R. Lupini, G. Shi, J. H. Lin, S. Najmaei, Z. Lin, A. L. Elias, A. Berkdemir, G. You, H. Terrones, M. Terrones, R. Vajtai, S. T. Pantelides, S. J. Pennycook, J. Lou, W. Zhou, and P. M. Ajayan, “Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide,” Nano Letters, vol. 14, pp. 442-449, Feb 2014.

[5]        N. Biskup, J. Salafranca, V. Mehta, M. P. Oxley, Y. Suzuki, S. J. Pennycook, S. T. Pantelides, and M. Varela, “Insulating Ferromagnetic LaCoO3-delta Films: A Phase Induced by Ordering of Oxygen Vacancies,” Physical Review Letters, vol. 112, Feb 2014.

2013

[1]        J. Chen, Y. S. Puzyrev, C. X. Zhang, E. X. Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, “Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs,” Ieee Transactions on Nuclear Science, vol. 60, pp. 4080-4086, Dec 2013.

[2]        J. H. Lin, W. D. He, S. Vilayurganapathy, S. J. Peppernick, B. Wang, S. Palepu, M. Remec, W. P. Hess, A. B. Hmelo, S. T. Pantelides, and J. H. Dickerson, “Growth of Solid and Hollow Gold Particles through the Thermal Annealing of Nanoscale Patterned Thin Films,” Acs Applied Materials & Interfaces, vol. 5, pp. 11590-11596, Nov 2013.

[3]        B. Wang, Y. S. Puzyrev, and S. T. Pantelides, “Enhanced chemical reactions of oxygen at grain boundaries in polycrystalline graphene,” Polyhedron, vol. 64, pp. 158-162, Nov 2013.

[4]        R. Mishra, W. Zhou, S. J. Pennycook, S. T. Pantelides, and J. C. Idrobo, “Long-range ferromagnetic ordering in manganese-doped two-dimensional dichalcogenides,” Physical Review B, vol. 88, Oct 2013.

[5]        B. R. Tuttle, T. Aichinger, P. M. Lenahan, and S. T. Pantelides, “Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes,” Journal of Applied Physics, vol. 114, Sep 2013.

[6]        X. Shen, Y. S. Puzyrev, and S. T. Pantelides, “Vacancy breathing by grain boundaries-a mechanism of memristive switching in polycrystalline oxides,” Mrs Communications, vol. 3, pp. 167-170, Sep 2013.

[7]        H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, and K. I. Bolotin, “Bandgap Engineering of Strained Monolayer and Bilayer MoS2,” Nano Letters, vol. 13, pp. 3626-3630, Aug 2013.

[8]        X. Shen, B. R. Tuttle, and S. T. Pantelides, “Competing atomic and molecular mechanisms of thermal oxidation-SiC versus Si,” Journal of Applied Physics, vol. 114, Jul 2013.

[9]        F. M. Steel, B. R. Tuttle, X. Shen, and S. T. Pantelides, “Effects of strain on the electrical properties of silicon carbide,” Journal of Applied Physics, vol. 114, Jul 2013.

[10]      J. H. Lin, W. J. Fang, W. Zhou, A. R. Lupini, J. C. Idrobo, J. Kong, S. J. Pennycook, and S. T. Pantelides, “AC/AB Stacking Boundaries in Bilayer Graphene,” Nano Letters, vol. 13, pp. 3262-3268, Jul 2013.

[11]      C. X. Zhang, X. Shen, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. A. Francis, T. Roy, S. Dhar, S. H. Ryu, and S. T. Pantelides, “Temperature Dependence and Postirradiation Annealing Response of the 1/f Noise of 4H-SiC MOSFETs,” Ieee Transactions on Electron Devices, vol. 60, pp. 2361-2367, Jul 2013.

[12]      J. Lee, W. Zhou, S. J. Pennycook, J. C. Idrobo, and S. T. Pantelides, “Direct visualization of reversible dynamics in a Si-6 cluster embedded in a graphene pore,” Nature Communications, vol. 4, Apr 2013.

[13]      B. R. Tuttle, X. Shen, and S. T. Pantelides, “Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices,” Applied Physics Letters, vol. 102, Mar 2013.

[14]      K. H. Warnick, B. Wang, D. E. Ciffel, D. W. Wright, R. F. Haglund, and S. T. Pantelides, “Room-Temperature Reactions for Self-Cleaning Molecular Nanosensors,” Nano Letters, vol. 13, pp. 798-802, Feb 2013.

[15]      X. Shen and S. T. Pantelides, “Atomic-Scale Mechanism of Efficient Hydrogen Evolution at SiC Nanocrystal Electrodes,” Journal of Physical Chemistry Letters, vol. 4, pp. 100-104, Jan 2013.

[16]      Z. Jarrahi, Y. H. Cao, T. Hong, Y. S. Puzyrev, B. Wang, J. H. Lin, A. H. Huffstutter, S. T. Pantelides, and Y. Q. Xu, “Enhanced photoresponse in curled graphene ribbons,” Nanoscale, vol. 5, pp. 12206-12211, 2013.

[17]      B. Wang, L. Tsetseris, and S. T. Pantelides, “Introduction of nitrogen with controllable configuration into graphene via vacancies and edges,” Journal of Materials Chemistry A, vol. 1, pp. 14927-14934, 2013.

[18]      S. T. Pantelides, “The role of extended defects in device degradation,” Physica Status Solidi a-Applications and Materials Science, vol. 210, pp. 175-180, Jan 2013.

[19]      C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, X. Shen, and S. T. Pantelides, “Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs,” Ieee Electron Device Letters, vol. 34, pp. 117-119, Jan 2013.


2012

  1. P. Yu, W. Luo, D. Yi, J. X. Zhang, M. D. Rossell, C. H. Yang, L. You, G. Singh-Bhalla, S. Y. Yang, Q. He, Q. M. Ramasse, R. Erni, L. W. Martin, Y. H. Chu, S. T. Pantelides, S. J. Pennycook, and R. Ramesh, “Interface control of bulk ferroelectric polarization”, Proc. Natl. Acad. Sci. U. S. A. 109, 9710-9715 (2012).
  2. W. Zhou, J. Lee, J. Nanda, S. T. Pantelides, S. J. Pennycook, and J. C. Idrobo,”Atomically localized plasmon enhancement in monolayer graphene”, Nature Nanotech. 7, 161-165 (2012).
  3. Y. M. Kim, J. he, M. D. Biegalski, H. Ambaye, V. Lauter, H. M. Christen, S. T. Pantelides, S. J. Pennycook, S. V. Kalinin, and A. Y. Borisevich, “Probing oxygen vacancy concentration and homogeneity in solid-state fuel-cell cathode materials on the subunit-cell level”, Nature Mater. 11, 888-894 (2012).
  4. A. K. M. Newaz, Y. S. Puzyrev, B. Wang, S. T. Pantelides, and K. Bolotin, “Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment”,  Nature Commun. 3, 734 (2012).
  5. J. Seidel, W. Luo, S. J. Suresha, P. K. Nguyen, A. S. Lee, S. Y. Kim, C. H. Yang, S. J. Pennyccok, S. T. Pantelides, J. F. Scott, and R. Ramesh, “Prominent electrochromism through vacancy-order melting in a complex oxide”, Nature Comm. 3, 799 (2012).
  6. X. G. Zhang and S. T. Pantelides, “Theory of charge limited currents”, Phys. Rev. Lett. 108, 266602 (2012).
  7. M. D. Rossell, R. Emi, M. P. Prnage, J. C. Idrobo, W. Luo, R. J. Zeches, S. T. Pantelides, and R. Ramesh, “Atomic structure of highly stained BiFeO3 thin films”, Phys. Rev. Lett. 108, 047601 (2012).
  8. R. F. Klie, Q. Qiao, T. Paulauskas, A. Gulec, A. rebola, S. Ogut, M. P. Prnage, J. C. Idrobo, S. T. Pantleides, S. Kolesnik, B. Dabrowski, M. Ozdemir, C. Boyraz, D. Mazumdar, and A. Gupta, “Observations of Co4+ in a higher spin state and the increase in the Seebeck coefficient of thermoelectric Ca3Co409“, Phys. Rev. Lett. 108, 196601 (2012).
  9. W. Zhou, M. D. Kapetanakis, M. P. Prange, S. T. Pantelides, S. J. Pennycook, and J.-C. Idrobo, “Direct Determination of the Chemical Bonding of Individual Impurities in Graphene”, Phys. Rev. Lett. 109, 206803, (2012).
  10. M. P. Prange, M. P. Oxley, SM. Varela, S. J. Pennycook, and S. T. Pantelides, “Simulation of Spatially-Resolved Electron Energy Loss Near-Edge Structure for Scanning Transmission Electron Microscopy”, Phys. Rev. Lett., 109, 246101 (2012).
  11. K. Appavoo, D. Y. Lei, Y. Sonnefraud, B. Wang, S. T. Pantelides, S. A. maier, and R. F. Haglund, “Role of defects in the phase transition of VO2 nanoparticles proberd by plasmon resonance spectrscopy”, Nano Lett. 12, 780-786 (2012).
  12. J. Salafranca, J. Gazquez, N. Perez, A. Labarta, S. T. Pantelides, S. J. Pennycook, X. Batlle, and M. varela, “Surfactant organic molecules restore magnetism in metal-oxide nanoparticle surfaces”, Nano Lett. 12, 2499-2503 (2012).
  13. T. J. Pennycook, J. R. McBride, S. J. Rosenthal, S. J. Pennycook, and S. T. Pantelides, “Dynamic fluctuations in ultrasmall nanocrystals induce white light emission”, Nano Lett. 12, 3038-3042 (2012).
  14. J. Lee, S. J. Pennycook, and S. T. Pantelides, “Simultaneous enhancement of electronic and Li+ ion conductivity in LiFePO”. Appl. Phys. Lett. 101, 033901 (2012).
  15. E. X. Zhang, A. K. M. Newaz, B. Wang, C. X. Zhang, D. M. Fleetwood, K. Bolotin, R. D. Schrimpf, S. T. Pantelides, and M. L. Alles, “Ozone-exposure effects on graphene-on-SiO2 transistors”, Appl. Phys. Lett. 101, 121601 (2012).
  16. L. Tsetseris and S. T. Pantleides, “Molecular doping of graphene with ammonium groups”, Phys. Rev. B, 85, 155446 (2012).
  17. S. Bubin, B. Wang, S. T. Pantelides, and K. Varga, “Simulation of high-energy ion collisions with graphene fragments”, Phys. Rev. B 85, 235435 (2012).
  18. B. Wang and S. T. Pantelides, “Magnetic moment of a single vacancy in graphene and semiconducting nanoribbons”, Phys. Rev. B 86, 165438 (2012).
  19. A. Y. Borisevich, A. R. Lupini, J. He, E. A. Eliseev, A. N. Morozovska, G. S. Svechnikov, P. Yu, Y. H. Chu, R. ramesh, S. T. Pantelides, S. V. Kalinin, and S. J. Pennycook, “Interface dipole between two metallic oxides caused by localized oxygen vacancies”, Phys. Rev. B 86, 140102 (2012).
  20. E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, X. Shen, and S. T. Pantleides, “Bias-temperature instabilities in 4H-SiC metal-oxide-semiconductor capacitors”, IEEE Trans. Dev. and Mater. Reliab. 12, 391-398 (2012).
  21. N. L. Rowsey, M. E. Law, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, and S. T. Pantelides, “Radiation-induced oxide charge in low-and-high-H2 environments”, IEEE Trans. on Nucl. Sci. 59, 755-759 (2012).
  22. V. Ramachandran,  R. A. Reed, R. D. Schrimpf, D. McMorrow, J. D. Boos, M. P. King, E. X. Zhang, G. Vizkelethy, X. Shen, and S. T. Pantelides, “Single-event transient sensitivity of InAlSb/InAs/AlGaSb high electron mobility transistors”, IEEE Trans. on Nucl. Sci.  59, 2691-2696 (2012).
  23. Y. S. Puzyrev, B. Wang, E. X. zhang, C. X. Zhang, A.K.M. Newaz, K. I. Bolotin, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Surface reactions and defect formation in irradiated graphene devices”, IEEE Trans. on Nucl. Sci. 59, 3039-3044 (2012).
  24. N. L. Rowsey, M. E. Law, R. D. Schrimpf, D. M. Fleetwood, B. R. Tuttle, and S. T. Pantelides, “Mechanisms separating time-dependent and true dose-rate effects in irradiated bipolar oxides”, IEEE Trans. on Nucl. Sci. 59, 3069-3076 (2012).
  25. D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, N. L. Rowsey, M. E. Law, B. R. Tuttle, and S. T. Pantelides, “The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing”, IEEE Trans. on Nucl. Sci. 59, 3087-3092 (2012).
  26. L. Tsetseris and S. T. Pantelides, “Hydrogen uptake by graphene and nucleation of graphene”, Journal of Mat. Sci. 47, (special issue), 7571-7579 (2012).
  27. Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, X. Shen, S. T. Pantelides, X. Zhu, L. C. Feldman, J. Rozen, and J. R. Williams, “Phosphorous passivation of the SiO2/4H-SiC interface”, Solid-State Electron. 68, 103-107 (2012).
  28. S. T. Pantelides, Y. Puzyrev, X. Shen, T. Roy, S. DasGupta, B. R. Tuttle, D. M. Fleetwood, and R. D. Schrimpf, “Reliability of III-V devices: The defects that cause the trouble”, Microelectron. Eng. 90, 3-8 (2012).
  29. W. D. He, J. H. Lin, B. Wang, S. Q. Tuo, S. T. Pantelides, and J. H. Dickerson, “An analytical expression for the van der Waals interaction in oriented-attachement growth: a spherical nanoparticle and a growing cylindrical nanorod”, Phys. Chem. Chem. Phys. 14, 4548-4553 (2012).
  30. S. T. Pantelides, Y. Puzyrev, L. Tsetseris, and B. Wang, “Defects and doping and their role in functionalyzing graphene”, MRS Bulletin 37, 1187 (2012).

2011

  1. J. W. Lee, W. Zhou, J. C. Idrobo,S. J. Pennycook, and S. T. Pantelides, “Vacancy-Driven Anisotropic Defect Distribution in the Battery-Cathode Material LiFePO(4)”, Phys. Rev. Lett. 107 (2011).
  2. J. Gazquez, W. D. Luo, M. P. Oxley, M. Prange, M. A. Torija, M. Sharma, C. Leighton, S. T. Pantelides, S. J. Pennycook, and M. Varela, “Atomic-Resolution Imaging of Spin-State Superlattices in Nanopockets within Cobaltite Thin Films”, Nano Lett. 11, 973-976 (2011).
  3. X. Shen and S. T. Pantelides, “Identification of a major cause of endemically poor mobilities in SiC/SiO(2) structures”, Appl. Phys. Lett. 98, 053507 (2011).
  4. X. A. Shen, E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar, S. H. Ryu, and S. T. Pantelides, “Atomic-scale origins of bias-temperature instabilities in SiC-SiO(2) structures”, Appl. Phys. Lett. 98, 063507 (2011).
  5. L. Tsetseris and S. T. Pantelides, “Graphene nano-ribbon formation through hydrogen-induced unzipping of carbon nanotubes”, Appl. Phys. Lett. 99, 143119 (2011).
  6. B. Wang and S. T. Pantelides, “Controllable healing of defects and nitrogen doping of graphene by CO and NO molecules”, Phys. Rev. B 83, 245403 (2011).
  7. L. Tsetseris and S. T. Pantelides, “Intermolecular bridges and carrier traps in defective C(60) crystals”, Phys. Rev. B 84, 195202 (2011).
  8. B. R. Tuttle, S. Dhar, S. H. Ryu, X. Zhu, J. R. Williams, L. C. Feldman, and S. T. Pantelides, “High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors”, Jour. Appl. Phys. 109, 023702 (2011).
  9. Y.S.Puzyrev, T.Roy, M.Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors”, Jour. Appl. Phys. 109, 034501 (2011).
  10. L. Tsetseris and S. T. Pantelides, “Defect formation and hysterectic inter-tube displacement in multi-wall carbon nanotubes”,      Carbon 49, 581-586 (2011).
  11. B. Wang, Y. S. Puzyrev, and S. T. Pantelides, “Strain enhanced defect reactivity at grain boundaries in polycrystalline graphene”, Carbon 49, 3983-3988 (2011).
  12. T. Roy, Y. S. Puzyrev, E. X. Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, “1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH(3)-rich conditions”, Microelectr. Reliability 51, 212-216 (2011).
  13. S. DasGupta, X. Shen, R. D. Schrimpf, R. A. Reed, S.T. Pantelides, D. M. Fleetwood, J. I. Bergman, and B. Brar, “Degradation in InAs-AlSb HEMTs Under Hot-Carrier Stress”, IEEE Trans. Electron Devices 58, 1499-1507 (2011).
  14. L. Tsetseris and S. T. Pantelides, “Defect-related hysteresis in nanotube-based nano-electromechanical systems”, Nanoscale Research Lett. 6, 245 (2011).
  15. E. Golias, L. Tsetseris, A. Dimoulas, and S. T. Pantelides, “Ge volatilization products in high-k gate dielectrics”, Microelectron. Engin. 88, 427-430 (2011).
  16. L. Tsetseris and S. T. Pantelides, ” Defect formation and annihilation at Ge-GeO(2) interfaces”, Microelectron. Engineering 88, 395-398 (2011).
  17. R. D. Schrimpf, D. M. Fleetwood, M. L. Alles, R. A. G. Lucovsky, and S. T. Pantelides, “Radiation effects in new materials for nano-devices (invited)”, Microelectron. Engineering 88, 1259-1264 (2011).
  18. B. Wang, D. Wright, D. Cliffel, R. Haglund, and S. T. Pantelides, “Ionization-Enhanced Decomposition of 2,4,6-Trinitrotoluene (TNT) Molecules”, Journ. Phys. Chem. 115, 8142-8146 (2011).
  19. T. J. Pennycook, M. P. Oxley, J. Garcia-Barriocanal, F. Y. Bruno, C. Leon, J Santamaria, S. T. Pantelides, M. Varela, and S. J. Pennycook, “Seeing oxygen disorder in YSZ/SrTiO(3) colossal ionic conductor heterostructures using EELS”, European Physical Journal- Applied Physics 54, 33507 (2011).
  20. Jia-An Yan, J. A. Driscoll, B. K. Wyatt, K. Varga, and S. T. Pantelides,”Time-domain simulation of electron diffraction in crystals” Phys. Rev. B, (2011).

2010

  1. Ondrej Krivanek, Matthew F. Chisholm, Valeria Nicolosi, T. J. Pennycook, George J. Corbin, Niklas Dellby, Matthew F. Murfitt, Christopher S. Own, Zoltan S. Szilagyi, Mark P. Oxley, S. T. Pantelides, and Stephen J. Pennycook, “Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy”, Nature 464, 571-574 (2010).
  2. Timothy J. Pennycook, Matthew J. Beck, Kalman Varga, Maria Varela, Stephen J. Pennycook, and S. T. Pantelides, “Origin of colossal ionic conductivity in oxide multilayers: interface induced sublattice disorder”, Phys. Rev. Lett. 104, 115901 (2010).
  3. J. He, A. Borisevich, S. V. Kalinin, S. J. Pennycool, and S. T. Pantelides, “Control of octahedral tilts and magnetic properties of perovskite oxide heterostructures by substrate symmetry”, Phys. Rev. Lett. 105, 227203 (2010).
  4. M. F. Chisolm, W. D. Luo, M. P. Oxley, S. T. Pantelides, and H. N. Lee. “Atomic-scale compensation phenomena at polar inerfaces”, Phys. Rev. Lett. 105, 197602 (2010).
  5. N. Jiang, NY. Y. Zhang, Q. Liu, Z. H. Cheng, Z. T. Deng, S. X. Du, H. –J. Gao, M. J. Beck and S. T. Pantelides, “Diffusivity control in molecule-on-metal systems using electric fields”, Nano Lett. 10, 1184-1188 (2010).
  6. N. Jiang, Y. Y. Zhang, Q. Liu, Z. H. Cheng, Z. T. Deng, S. X. Du, H. J. Gao, M. J. Beck, and S. T. Pantelides, “Diffusity control in molecule-on-metal systems using electric fields”, Nano Lett. 10, 1184-1188 (2010).
  7. T. Roy, Y. S. Puzyrev, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, D. F. Brown, U. K. Mishra, and S. T. Pantleides, “Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions”, Appl. Phys. Lett. 96, 133503 (2010).
  8. Y. S. Puzyrev, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors”, Appl. Phys. Lett. 96, 053505 (2010).
  9. L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, “Hydrogen-dopant interactions in SiGe and strained Si”, Appl. Phys. Lett. 96, 251905 (2010).
  10. X. A. Shen, E. X. Zhang, C. X. Zhang, D. M. Fleetwood, R. D. Shrimpf, S. Dhar, S. H. ryu, and S. T. Pantelides, “Atomic-scale origins of bias-temperature instabilities in SiC-SiO2 structures”, Appl. Phys. Lett. 98, 063507 (2010).
  11. J. Qi, J. A. Yan, JH. Park, A. Steigerwald, Y. Xu, S. N. Gilbert, X. Liu, J. K. Furdyna, S. T. Pantelides, and N. Tolk, “Mechanical and electronic properties of ferromagnetic Ga1-xMnxAs using ultrafast coherent acoustic phonons”, Phys. Rev. B 81, 115208 (2010).
  12. W. Walkosz, R. F. Klie, S. Ogut, B. Mikijelj, S. J. Pennycook, S. T. Pantelides, and J. C. Idrobo, “Crystal-induced effects at crystal/amorophous interfaces: the case for Si3N4/SiO2”, Phys. Rev. B 82, 081412 (2010).
  13. J. C. Idrobo and S. T. Pantelides, “Origon of bulklike optical response in noble-metal Ag and Au nanoparticles”, Phys. Rev. B 82, 085420 (2010).
  14. L. Tsetseris, and S. T. Pantelides, “Oxygen and water-related impurities in SiGe and strained Si”, Phys. Rev. B 82, 045201 (2010).
  15. J. Qi, J. A. Yan, H. Park, A. Steigerwald, Y. Xu, S. N. Gilbert, X. Liu, J. K. Furdyna, S. T. Pantelides, and N. Tolk, “Mechainical and electronic properties of ferromagnetic Ga 1-xMnxAs using ultrafast cohernet acoustic phonons”, Phys. Rev. B 81, 115208 (2010).
  16. T. J. Pennycook, G. Hadjisavvas, J. C. Idrobo, P. C. Kelires, and S. T. Pantelides, “Optical gaps of free and embedded Si nanoclusters: Density functional theory calculations”, Phys. Rev. B 82, 125310 (2010).
  17. X. Shen, S. Dasgupta, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Recoverable degradation in INAs/AlSb high-electron mobility transistors: the role of hot carriers and metastable defects in AlSb”, J. Appl. Phys. 108, 114505 (2010).
  18. X. Shen, M. P. Oxley, Y. S. Puzyrev, B. R. Tuttle, G. Duscher, and S. T. Pantelides, “ Excess carbon in silicon carbide”,  J. Appl. Physics 108, 123705 (2010).
  19. Y. S. Puzyrev, T. Toy, M. Beck, B. R. Tuttle, R. D. Shrimpf, D. M. Fleetwood, and S. T. Pantelides, “Dehydrogenation of defects and hot-electron degradation in GaN high-electron high-mobility transistors”, J. Appl. Phys. 109, 034501, (2010).
  20. B. R. Tuttle, D. R. hughart, R. D. Schrimpf, R. D. Schrimpf, D. M. Fleetood, and S. T. Pantelides, “Defect interactions of H-2 in SiO2: implications foe ELDRS and latent interface trap buildup”, IEEE Trans. Nucl. Sci. 57, 3046-3053 (2010).
  21. T. Roy, E. X. Zhang, Y. S. Puzyrev, D. M. Fleetwood, R. D. Schrimpf, B. K. Choi, A. B. Hmelo, and S. T. Pantelides, “Process dependence of proron-induced degradation in GaN HEMTs”, Ieee Trans. Nucl. Sci. 57, 3060-3065 (2010).
  22. S. T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisawas, I. G. batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, and R. D. Schrimpf,”Performance, reliability, radiation effects, and aging issues in microelectronics: from atomic-scale physics to engineering-level modeling”, Solid State Electron. 54, 841-848 (2010).
  23. L. Tsetseris, S. Logothetidis, and S. T. Pantelides, “Atomic-scale mechanisms for diffusion of impurities in transition-metal nitrides”, Surf. And Coatings Techn. 204, 2089-2094 (2010).

2009

  1. J. Tao, D. Niebieskikwiat, M. Varela, W. Luo, M. A. Schofield, Y. Zhu, M. B. Salamon, J. M. Zuo, S. T. Pantelides, and S. J. Pennycook,  “Direct imaging of nanoscale phase separation in La0.55Ca0.45MnO3: relationship to colossal magnetoresistance”, Phys. Rev. Lett. 103, 097202 (2009).
  2. X. G. Zhang and S. T. Pantelides, “Screening in nanowires and nanocontacts: field emission, adhesion force, and contact resistance”, Nano Lett. 9. 4306-4310 (2009).
  3. S. L. Teich-McGoldrick, M. Ballenger, M. Caussanel, L. Tsetseris, S. T. Pantelides, S. C. Glotzer, and R. D. Schrimpf, “Design considerations for CdTe nanotetrapods as electronic devices”, Nano Lett. 9, 3683-3688 (2009).
  4. O. D. Restrepo, K. Varga, and S. T. Panteldies,”Fist-principles calculations of electron mobilities in silicon: phinon and Coulomb scattering”, Appl. Phys. Letters 94, 212103 (2009).
  5. L. Tsetseris, S. Logotheteidis, and S. T. Pantelides, “Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN”, Appl. Phys. Lett. 94, 161903 (2009).
  6. L. Tsetseris and S. T. Pantelides, “Morphology and defect properties of the Ge-GeO2 interface”, Appl. Phys. Lett. 95, 262107 (2009).
  7. J. C. Idrobo, M. P. Oxley, W. Walkosz, R. F. Klie, S. Ogut, B. Mikijelj, S. J. Pennycook, and S. T. Pantelides,”Identification and lattice location of oxygen impurities in alpha-Si3N4”, Appl. Phys. Lett. 95, 164101 (2009).
  8. M. Varela, M. P. Oxley, W. Luo, J. Tao, M. Watanabe, A. R. Lupini, S. T. PantelidesS. J. Pennycook, “Atomic-resolution imaging of oxidation states in manganites”, Phys. Rev. B 79, 085117 (2009).
  9. B. R. Tuttle and S. T. Pantelides, “Vacancy-related defects and the E-delta (‘) center in amorphous silicon dioxide: density functional calculations”, Phys. Rev. B 79, 115208 (2009).
  10. J. C. Idrobo, A. Halabica, R. H. Magruder, R. F. Haglund. Jr.’ S. J. Pennycook, and S. T. Pantelides, “Universal optical response of Si-Si bonds and its eveolution from nanoparticles to bulk crystals”, Phys. Rev. B 79, 125322 (2009).
  11. M. J. Beck, and S. T. Pantelides, “Origin of  preferential sputtering in a-SiO2 during ion beam synthesis of nanocrystals”, Phys. Rev. B 79, 033203 (2009).
  12. W. D. Luo. M. Varela, J. Tao, S. J. Pennycook, and S. T. Pantelides, “Electronic and crystal-field effects in the fine structure of electron energy-loss spectra of manganites”, Phys. Rev. B79, 052405 (2009).
  13. J. Q. Lu, X. G. Zhang, and S. T. Pantelides, “Standing spin waves excited optically across an indirect gap in short graphene nanoribbons”, Phys. Rev. B (2009).
  14. A. Halabica, S. T. Pantelides, R. F. Haglund, R. H. Magruder, A. Meldrum, “Excitation and detection of surface acoustic phono modes in Au/Al2O3 multilayers”, Phys. Rev. B 80 (2009).
  15. R. Arora, J. Rozen, D. M. Fleetwood, K. F. Galloway, C. X. Zhang, J. S. Han, S. Dimitrijev, F. Kong, L. C.Feldman, S. T. Pantelides,  and R. D. Schrimpf, “Charge trapping properties of 3-Cand 4H-SiC MOS capacitors with nitrided gate oxides”, IEEE Tans. Nucl. Sci. 56, 3185-3191 (2009).
  16. M. J. Beck, Y. S. Puzyrev, N. Sergueev, K. Varga, R. D. schrimpf, D. M. Fleetwood, and S. T. Pantelides, “The role of atomic displacemets in ion-induced dielectric breakdown”, IEEE Trans. Nucl. Sci.56, 3210-3217, Part 1 (2009).
  17. D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, X. J. Chen, H. J. Barnaby, K. E. Holbert, R. L. Pease, D. G. Platteter, B. R. Tuttle, and S. T. Pantelides, “The effects of aging and hydrogen on the radiation response of gated lateral PNP Bipolar transistors”, IEEE Trans. Nucl. Sci. 3361-3366, Part 1 (2009).
  18. L. Tsetseris and S. T. Pantelides, “Adsorbate-induced defect formation and annihilation on graphene and single-walled carbon nanotubes”, J. Phys. Chem. B 113, 941-944 (2009).
  19. L. Tsetseris and S. T. Pantelides, “Adatom complexes and self-healing mechanisms on graphene and single-wall carbon nanotubes”, Carbon 47, 901-908 (2009).
  20. L. Tsetseris and S. T. Pantelides, “Modification of the electronic properties of rubrene crystals by water and oxygen-related species”, Org. Electron. 10, 333-340 (2009).
  21. L. Tsetseris and S. T. Pantelides, “First-principles studies on organic electronic materials”, Eur. Phys. J. Appl. Phys. 46, 12511 (2009).
  22. S. J.Pennycook, M. F. Chisholm, A. R. Lupini, M. Varela, A. Y. Borisevich, M. P. Oxley, W. D. Luo, K. van Benthem, S.-H Oh, D. L. Sales, S. I. Molina, J. Garcia-Barriocanal, C. Leon, J. Santamaria, S. N. Rashkeev, and S. T.  Pantelides, “Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to splving energy problems”, Phil. Trans. Royal Soc. A-Math. Phys. and Eng. Sci. 367, 3709-3733 (2009).

2008

  1. R. Hatcher, M. Beck, A. Tackett, and S. T. Pantelides, “Dynamical effects in the interaction of ion beams with solids”,  Phys. Rev. Lett. 100, 103201 (2008).
  2. I. G. Batyrev, B. Tuttle, D. M. Fleetwood, R. D. Schrimpf, L. Tsetseris, and S. T. Pantelides, “Reactions of water molecules in silica-based network glasses”, Phys. Rev. Lett. 100, 105503 (2008).
  3. B. R. Tuttle and S. T. Pantelides, comment on “Theory of defect levels and the ‘Band Gap Problem’ in silicon”, Phys. Rev. Lett. 101, 089701 (2008).
  4. M. J. Beck, R. D. Schrimpf, D. M. Fleetwood,  S. T. Pantelides, “Disorder-recrystallization effects in low-energy beam-solid interactions”, Phys. Rev. Lett., 100, 185502 (2008).
  5. Luo W., Pennycook, S. J., and Pantelides, S. T., “Magnetic ‘dead’ layer at a complex oxide surface”, Phys. Rev. Lett., 101, 247204 (2008).
  6. J. Rozen, J. Dhar, S. K. Dixit, V. V. Afanas’ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams, and L. C. Feldman, “Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface”, J. Appl. Phys. 103, 124513 (2008).
  7. S. H. Oh, K. van Benthem, S. I. Molina, A. Y. Borisevich, W. Luo,  P. Werner, N. D. Zakharov, S. T. Pantelides, and S. J. Pennycook, “Point defect configurations of supersaturated Au atoms inside Si nanowires,” Nano Lett. 8, 1016-1019 (2008).
  8. A. G. Marinopoulos, K. van Benthem, S. N. Rashkeev, S. J. Pennycook, and S. T. Pantelides, “Impurity segregation and ordering in Si-SiO2-HfO2 structures”, Phys. Rev. B 77, 195317 (2008).
  9. L. Tsetseris and S. T. Pantelides, “Large impurity effects in rubrene crystals: first-principles calculations”, Phys. Rev. B 78, 115205 (2008).
  10. L. Tsetseris, N. Kalfagiannis, S. Logothetidis, and S. T. Pantelides, “Trapping and release of impurities in TiN: a first-principles study”, Phys. Rev. B 78, 094111 (2008).
  11. K. G. Roberts, M. Varela, S. Rashkeev, S. T. Pantelides, S. J. Pennycook, and K. M. Krishnan, “Defect-mediated ferromagnetism in insulating Co-doped anatase TiO2 thin films”, Phys. Rev. B 78, 014409 (2008).
  12. A. Halabica, J. C. Idrobo, S. T. Pantelides, R. H. Magruder, S. J. Pennycook, R. F. Haglind, “Pulsed infrared laser annealing of gold nanopaticles embedded in a Si matrix”, Journ. Appl. Phys., 103, 083545 (2008).
  13. L. Tsetseris, N. Kalfagiannis, S. Logothetidis, and S. T. Pantelides, “Structure and interaction of point defects in transition-metal nitrides”, Phys. Rev. B 76, 224107 (2008).
  14. R. D. Schrimpf, K. M. Warren, D. R. Ball, R. A. Weller, R. A. Reed, D. M. Fleetwood, L. W. Massengill, M. H. Mendenhall, S. N. Rashkkev, S. T. Pantelides, and M. A. Alles, “Muti-scale simulation of radiation effects in electronic devices”, IEEE Trans. Nucl. Sci. 55, 1891-1092 (2008).
  15. I. G. Batyrev, D. M. Fleetwod, R. D. Schrimpf, and S. T. Pantelides, “The role of water in the radiation response of wet and dry oxides”, IEEE Trans. Nucl. Sci. 55, 2085-2089 (2008).
  16. M. J. Beck, R. Hatcher, R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, “Quantum mechanical description of displacement damage formation”, IEEE Trans. Nucl. Sci. 54, 1906-1912 (2008).
  17. D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, R. L. Pease, and G. W. Dunham , “The electron capture, hydrogen release, and enhanced gain degradation in linear bipolar devices”, IEEE Trans. Nucl. Science 55, 2986-2991 (2008).
  18. M. J. Beck, B. R. Tuttle, R. D. Schrimpf, D. M. Fleetwood and  S. T. Pantelides, “Atomic displacement effects in single-event gap rupture”, IEEE Tans. Nucl. Sci. 55, 3025-3031 (2008).
  19. X. J. Chen, H. J. Barnaby, B. Vertneire, K. E. Holbert, D. Wright, R. L. Pease, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides, M. R. Shaneyfelt, and P. Adell, “Post-irradiation annealing mechanisms of defects generated in hydrogenated bipolar oxides”, IEEE Trans. Nucl. Sci. 55, 3032-3038 (2008).
  20. I. G. Batyrev, D. Hughart, R. Durand, M. Bounasser, B. R. Tuttle, D. M. Fleetwood, R. D. Schrimpf, S. N. Rashkeev, G. W.  Dunham, M. E. Law, and S. T.  Pantelides, “Effects of hydrogen on the radiation response of bipolar transistors: experiment and modeling”, IEEE Trans. Nucl. Sci. 55, 3039-3045 (2008).
  21. J. R. Schwank, M. R. Shaneyfelt, A. Dasguota,  S. A. Francis, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, P. E. Dodd, V. Ferlet-Cavrois, P. Paillet, S. M.Dalton , S. E. Swanson., G. L. Hash, S. M. Thornberg., J. M. Hochrein, and G. K. Lum,“Effects of moisture and hydrogen exposure on radiation-induced MOS device degradation and its implications for long-term aging”, IEEE Trans. Nucl. Sci. 55, 3206-3215 (2008).
  22. L. Tsetseris, X. J. Zhou, D. M. Fleetwod, R. D. Schrimpf, and S. T. Pantelides, “Hydrogen-related instabilities in MOS devices under bias temperature stress”, IEEE Trans. Dev. Mat. Reliab. 7, 502-508 (2008).
  23. S. J. Pennycook, K. van Benthem, M. P Oxley, S. N. Rashkeev, and S. T. Pantelides, “From 3-D imaging of atoms to macroscopic device properties”, Microsc. and Microanal. 13, 82-83 (2008).
  24. M. Varela, M. P. Oxley, K. G. Roberts, J. Garcia-Barriocanal, A. R. Lupini, S. N. Rashkeev, C. Leon, K. M. Krishnan, J. Santamaria, S. T. Pantelides, and S. J. Pennycook, “Spectroscopic imaging of oxide interfaces with aberration corrected probes”, Microsc. and Microanal. 13, 142-143 (2008).
  25. S. T. Pantelides, Z.-Y. Lu, C. Nicklaw, T. Bakos, and S. N. Rashkeev, “The E’ center and oxygen vacancies in SiO2”, J. Non-Cryst. Solids, 354, 217-223 (2008).

 

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